Single N Channel MOSFET LRC LNTK4003M3T5G with halogen free material and low gate voltage threshold
Key Attributes
Model Number:
LNTK4003M3T5G
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
560mA
RDS(on):
2Ω@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
8.1pF@5V
Number:
1 N-channel
Input Capacitance(Ciss):
41pF@5V
Pd - Power Dissipation:
440mW
Mfr. Part #:
LNTK4003M3T5G
Package:
SOT-723
Product Description
Product Overview
This N-Channel, Single MOSFET with Gate ESD Protection is designed for various electronic applications requiring efficient switching and reliable performance. It features a low gate voltage threshold for simplified drive circuit design and low gate charge for fast switching speeds. The device boasts a minimum breakdown voltage rating of 30V and is ESD protected. It is RoHS compliant and Halogen Free. The 'S-' prefix variant is AEC-Q101 qualified and PPAP capable, suitable for automotive and other applications with stringent control change requirements.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS requirements and Halogen Free.
- Qualification: AEC-Q101 qualified (S- prefix models)
- PPAP Capable: Yes (S- prefix models)
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Conditions |
|---|---|---|---|---|---|---|
| MAXIMUM RATINGS | ||||||
| DrainSource Voltage | VDSS | 30 | V | |||
| GatetoSource Voltage Continuous | VGS | ±20 | V | |||
| Continuous Drain Current (Note 1) | ID | 0.56 | A | TA = 25°C | ||
| Continuous Drain Current (Note 1) | ID | 0.44 | A | TA = 85°C | ||
| Pulsed Drain Current (tp=10μs) | IDM | 1.7 | A | TA = 25°C | ||
| Continuous Source Current (Body Diode) | IS | 0.56 | A | TA = 25°C | ||
| Maximum Power Dissipation (Note 1) | PD | 0.37 | W | TA = 25°C | ||
| Maximum Power Dissipation (Note 1) | PD | 0.55 | W | TA = 85°C | ||
| Junction and Storage temperature | TJ,Tstg | -55 | 150 | °C | ||
| Maximum Temperature for Soldering Purposes | TL | 260 | °C | |||
| THERMAL CHARACTERISTICS | ||||||
| Thermal Resistance, JunctiontoAmbient Steady State (Note 1) | RθJA | 280 | °C/W | Surface-mounted on FR4 board using 1 in sq pad size | ||
| ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise noted) | ||||||
| DrainSource Breakdown Voltage (VGS = 0, ID = 100μAdc) | V(BR)DSS | 30 | Vdc | |||
| DrainSource Breakdown Voltage Temperature Coefficient | V(BR)DSS/ TJ | 228 | mV/°C | |||
| Zero Gate Voltage Drain Current (VDS=30V, VGS=0V) | IDSS | 1.0 | μAdc | |||
| GateBody Leakage Current, Forward (VDS = 0 V, VGS = ±10 V) | IGSS | ±1.0 | μAdc | |||
| Gate Threshold Voltage (VDS = VGS, ID = 250μAdc) | VGS(th) | 1.5 | Vdc | |||
| Negative Threshold Temperature Coefficient | VGS(th)/ TJ | -40 | mV/°C | |||
| Static DrainSource OnState Resistance (Note 2) | RDS(on) | 0.8 | 1.0 | Ω | VGS = 4.0 V, ID = 10 mA | |
| Static DrainSource OnState Resistance (Note 2) | RDS(on) | 1.5 | Ω | VGS = 2.5 V, ID = 10 mA | ||
| Forward Transconductance (Note 2) | gfs | 16.7 | mS | VDS = 3.0 V, ID = 10 mA | ||
| DYNAMIC CHARACTERISTICS | ||||||
| Input Capacitance | Ciss | 65.1 | pF | VGS = 0 V, f = 1.0MHz,VDS= 5 V | ||
| Output Capacitance | Coss | 12 | pF | VGS = 0 V, f = 1.0MHz,VDS= 5 V | ||
| Reverse Transfer Capacitance | Crss | 14 | pF | VGS = 0 V, f = 1.0MHz,VDS= 5 V | ||
| SWITCHING CHARACTERISTICS (VGS = 4.5 V, VDD = 5.0 V, ID = 0.1 A, RG = 50Ω) | ||||||
| Turn-On Delay Time | td(on) | 3.4 | ns | |||
| Rise Time | tr | 8.1 | ns | |||
| Turn-Off Delay Time | td(off) | 16.7 | ns | |||
| Fall Time | tf | 47.9 | ns | |||
| SOURCE-DRAIN DIODE CHARACTERISTICS | ||||||
| Forward Voltage | VSD | 0.65 | 0.7 | V | VGS = 0 Vdc, ISD = 10 mAdc | |
| Reverse Recovery Time | trr | 1.5 | μs | VGS = 0 V, dIS/dt = 8A/μs, IS = 10 mA | ||
| Device Marking and Ordering Information | ||||||
| Model | ||||||
| LNTK4003M3T5G | 30 V, 0.56 A, Single, NChannel, Gate ESD Protection | |||||
| S-LNTK4003M3T5G | 30 V, 0.56 A, Single, NChannel, Gate ESD Protection, AEC-Q101 qualified | |||||
| Device Marking | KM | |||||
| Shipping | 8000/Tape&Reel | SOT723 | ||||
| OUTLINE AND DIMENSIONS | ||||||
| Dimension | Millimeters | Inches | ||||
| A | 0.12 - 0.17 | 0.005 - 0.007 | ||||
| b | 0.25 - 0.31 | 0.010 - 0.012 | ||||
| b1 | 0.010 - 0.015 | 0.0004 - 0.0006 | ||||
| C | 0.45 - 0.50 | 0.018 - 0.020 | ||||
| D | 1.15 - 1.25 | 0.045 - 0.049 | ||||
| E | 0.75 - 0.85 | 0.030 - 0.033 | ||||
| e | 0.40 REF | 0.016 REF | ||||
| HE | 1.20 - 1.25 | 0.047 - 0.049 | ||||
| L | 1.15 MAX | 0.045 MAX | ||||
| L2 | 0.15 - 0.25 | 0.006 - 0.010 | ||||
Applications
- Level shifters
- Level switches
- Low side load switches
- Portable applications
2111172030_LRC-LNTK4003M3T5G_C2912038.pdf
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