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quality P Channel Enhancement Mode MOSFET LRC LP3407LT3G with 30V Voltage Rating and Low On State Resistance factory
quality P Channel Enhancement Mode MOSFET LRC LP3407LT3G with 30V Voltage Rating and Low On State Resistance factory

P Channel Enhancement Mode MOSFET LRC LP3407LT3G with 30V Voltage Rating and Low On State Resistance

Key Attributes
Model Number: LP3407LT3G
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.1A
Operating Temperature -:
-55℃~+150℃
RDS(on):
70mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
90pF
Number:
1 P-Channel
Output Capacitance(Coss):
130pF
Input Capacitance(Ciss):
625pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
11.5nC@10V
Mfr. Part #:
LP3407LT3G
Package:
SOT-23
Product Description

Product Overview

The LP3407LT1G and S-LP3407LT1G are 30V P-Channel Enhancement-Mode MOSFETs designed for automotive and other applications with unique site and control change requirements. These devices are AEC-Q101 qualified and PPAP capable, ensuring high reliability and suitability for demanding environments. They offer robust performance with features like low on-state resistance and compliance with RoHS and Halogen Free requirements.

Product Attributes

  • Brand: Leshan Radio Company, LTD.
  • Material Compliance: RoHS, Halogen Free
  • Qualification: AEC-Q101
  • Capability: PPAP capable
  • Technology: P-Channel Enhancement-Mode MOSFET

Technical Specifications

Model Description VDS (V) ID (A) RDS(ON) (m) Package Marking Order Information
LP3407LT1G 30V P-Channel Enhancement-Mode MOSFET -30 -4.1 @ VGS = -10V < 70 (VGS = -10V) SOT23(TO-236) A07 3000/Tape&Reel
S-LP3407LT1G 30V P-Channel Enhancement-Mode MOSFET (Automotive) -30 -4.1 @ VGS = -10V < 70 (VGS = -10V) SOT23(TO-236) A07 10000/Tape&Reel
Maximum Ratings (Ta = 25C)
Parameter Symbol Min. Max. Unit Notes
DrainSource Voltage VDSS -30 V
GatetoSource Voltage VGS 20 V
Continuous Drain Current ID Ta=25: -4.1
Ta=70: -3.5		 A
Pulsed Drain Current IDM -25 A Note 3
Power Dissipation PD Ta=25: 1.4
Ta=70: 0.9		 W Note 2
Junction and Storage Temperature Range Tj,Tstg -55 +150
Thermal Characteristics
Parameter Symbol Typ. Max. Unit Notes
Thermal Resistance, JunctiontoAmbient RJA 63 80 /W Note 1&4
Thermal Resistance, JunctiontoLead RJL 70 90 /W
Electrical Characteristics (Ta= 25C)
Characteristic Symbol Min. Typ. Max. Unit Notes
DrainSource Breakdown Voltage VBRDSS -30 V VGS = 0, ID = -250A
Zero Gate Voltage Drain Current IDSS -1 -30 A VGS = 0, VDS = -24 V
-5 A VGS = 0, VDS = -24 V,TJ =55
Gate Leakage Current IGSS 100 nA VDS =0V, VGS =20V
Gate Threshold Voltage VGS(th) -0.7 -1 -1.3 V VDS = VGS, ID = -250A
On state drain current ID(ON) -2 A VGS =-10V, VDS =-5V
Static DrainSource OnState Resistance RDS(on) 70 m VGS =-10V, ID =-4.1A
100 m VGS = -4.5V, ID = -3A
Forward Transconductance gfs 95 mS (VDS =-5V, ID =-4A)
Forward Voltage VSD -1.3 -1.6 V VGS = 0 V, IS = -1A
Input Capacitance Ciss 520 625 pF VGS = 0 V, f = 1.0MHz,VDS= -15 V
Output Capacitance Coss 100 130 pF VGS = 0 V, f = 1.0MHz,VDS= -15 V
Reverse Transfer Capacitance Crss 65 pF VGS = 0 V, f = 1.0MHz,VDS= -15 V
Total Gate Charge Qg 7.5 11.5 nC (VDS = -15V, ID = -4A)
Gate-Source Charge Qgs 1.3 2.2 nC
Gate-Drain Charge Qgd 3.1 nC
Turn-On Delay Time td(on) 5.5 ns (VGS =-10V, VDS =-15V, ID =-4A, RG = 3 )
Rise Time tr 5.3 ns
Turn-Off Delay Time td(off) 19 ns
Fall Time tf 7 ns
Body Diode Reverse Recovery Time trr 11 ns IF =-4A, dI/dt=100A/s
Body Diode Reverse Recovery Charge Qrr 8.8 nC IF =-4A, dI/dt=100A/s

1912111437_LRC-LP3407LT3G_C417552.pdf

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