40V 100A N Channel Trench MOSFET Featuring Low On Resistance MagnaChip Semicon MDU04N010VRH Component
Key Attributes
Model Number:
MDU04N010VRH
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
100A
RDS(on):
0.8mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
147pF
Number:
1 N-channel
Pd - Power Dissipation:
96.2W
Output Capacitance(Coss):
2.058nF
Input Capacitance(Ciss):
6.892nF
Gate Charge(Qg):
103.5nC@10V
Mfr. Part #:
MDU04N010VRH
Package:
PDFN56
Product Description
Product Overview
The MDU04N010VRH is a single N-Channel Trench MOSFET from Magnachip Semiconductor, featuring 40V breakdown voltage, 100A continuous drain current, and very low on-resistance (< 1.0m). It utilizes advanced MOSFET technology for high performance in on-state resistance and fast switching. This device is ideal for synchronous rectification in server and general-purpose applications.
Product Attributes
- Brand: Magnachip Semiconductor Ltd.
- Certifications: Halogen Free
Technical Specifications
| Characteristics | Symbol | Rating Unit | Test Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings (Ta = 25oC) | |||||||
| Drain-Source Voltage | VDSS | 40 | V | ||||
| Gate-Source Voltage | VGSS | 20 | V | ||||
| Continuous Drain Current | ID | 100.0 | TC=25oC | A | |||
| 152.7 | TC=100oC | A | |||||
| Pulsed Drain Current | IDM | 400.0 | A | ||||
| Power Dissipation | PD | 96.2 | TC=25oC | W | |||
| 38.5 | TC=100oC | W | |||||
| Single Pulse Avalanche Energy | EAS | 450 | (2) | mJ | |||
| Junction and Storage Temperature Range | TJ, Tstg | -55~150 | oC | ||||
| Thermal Characteristics | |||||||
| Thermal Resistance, Junction-to-Ambient | RJA | 50 | (1) | oC/W | |||
| Thermal Resistance, Junction-to-Case | RJC | 1.3 | oC/W | ||||
| Electrical Characteristics (TJ = 25oC) | |||||||
| Drain-Source Breakdown Voltage | BVDSS | 40 | ID = 250A, VGS = 0V | 40 | - | - | V |
| Gate Threshold Voltage | VGS(th) | - | VDS = VGS, ID = 250A | 1.0 | - | 2.0 | V |
| Drain Cut-Off Current | IDSS | - | VDS = 32V, VGS = 0V | - | - | 1.0 | A |
| Gate Leakage Current | IGSS | - | VGS = 20V, VDS = 0V | - | - | 0.1 | A |
| Drain-Source ON Resistance | RDS(ON) | - | VGS = 10V, ID =50A | - | 0.8 | 1.0 | m |
| Forward Transconductance | gfs | - | VDS = 10V, ID =50A | - | 185 | - | S |
| Dynamic Characteristics | |||||||
| Total Gate Charge | Qg(10.0V) | - | VDS = 20V, ID = 50A, VGS = 10V | - | 103.5 | - | nC |
| Gate-Source Charge | Qgs | - | - | 18.5 | - | ||
| Gate-Drain Charge | Qg d | - | - | 13.7 | - | ||
| Input Capacitance | Ciss | - | VDS = 20V, VGS = 0V, f = 1.0MHz | - | 6,892 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 147 | - | ||
| Output Capacitance | Coss | - | - | 2,058 | - | ||
| Turn-On Delay Time | td(on) | - | VGS = 10V, VDS = 20V, ID = 50A , RG = 3.0 | - | 21.8 | - | ns |
| Rise Time | tr | - | - | 18.8 | - | ||
| Turn-Off Delay Time | td(off) | - | - | 96.3 | - | ||
| Fall Time | tf | - | - | 44.1 | - | ||
| Gate Resistance | Rg | - | f=1.0 MHz | - | 1.0 | - | |
| Drain-Source Body Diode Characteristics | |||||||
| Diode continuous forward current | IS | - | - | - | 100 | A | |
| Diode pulse current | IS,pulse | - | pulsed; tp 10 s | - | - | 400 | A |
| Source-Drain Diode Forward Voltage | VSD | - | IS = 50A, VGS = 0V | - | 0.80 | 1.20 | V |
| Body Diode Reverse Recovery Time | trr | - | IF =50A, dl/dt = 100A/s | - | 57.7 | - | ns |
| Body Diode Reverse Recovery Charge | Qrr | - | - | 105.4 | - | nC | |
2509121533_MagnaChip-Semicon-MDU04N010VRH_C51891825.pdf
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