Power MOSFET MagnaChip Semicon MMUB65R115RURH optimized for low gate charge and high power dissipation in electronic devices
Key Attributes
Model Number:
MMUB65R115RURH
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
30A
RDS(on):
102mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
9pF
Input Capacitance(Ciss):
2.292nF
Output Capacitance(Coss):
57pF
Pd - Power Dissipation:
260W
Gate Charge(Qg):
64nC@10V
Mfr. Part #:
MMUB65R115RURH
Package:
PDFN88
Product Description
Product Overview
The MMUB65R115RU(P) is a power MOSFET utilizing Magnachip's advanced super junction technology, designed for high efficiency with very low on-resistance and gate charge. Optimized charge coupling technology contributes to superior efficiency. This user-friendly device offers advantages such as low EMI, reduced switching loss, and excellent ESD capability, making it suitable for demanding applications.
Product Attributes
- Brand: Magnachip Semiconductor Ltd.
- Certifications: RoHS Compliant
- Package: PDFN88
- Material: Pb Free Plating, Halogen Free (Green Package)
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
| Drain Source breakdown voltage | V(BR)DSS | 650 | V | VGS = 0V, ID = 1mA |
| Gate threshold voltage | VGS(th) | 3.0 | V | VDS = VGS, ID = 250A |
| Drain-Source on state resistance | RDS(ON) | 0.115 | VGS = 10V, ID = 15A | |
| Continuous drain current | ID | 30 | A | TC=25 |
| Pulsed drain current | IDM | 90 | A | Pulse width tP limited by Tj,max |
| Power dissipation | PD | 260 | W | |
| Single - pulse avalanche energy | EAS | 740 | mJ | IAS = 9 A |
| Input capacitance | Ciss | 2292 | pF | VDS = 400V, VGS = 0V, f = 400kHz |
| Output capacitance | Coss | 57 | pF | VDS = 400V, VGS = 0V, f = 400kHz |
| Reverse transfer capacitance | Crss | 9.0 | pF | VDS = 400V, VGS = 0V, f = 400kHz |
| Total gate charge | Qg | 64.0 | nC | VGS=10V, VDD=520V, ID=30A |
| Continuous diode forward current | ISD | 30 | A | |
| Diode forward voltage | VSD | 1.4 | V | ISD = 30A, VGS = 0V |
| Reverse recovery time | trr | 516 | ns | ISD = 30A di/dt = 100A/s VDD = 100V |
| Reverse recovery charge | Qrr | 9.9 | C | ISD = 30A di/dt = 100A/s VDD = 100V |
| Reverse recovery current | Irrm | 38.5 | A | ISD = 30A di/dt = 100A/s VDD = 100V |
| Thermal resistance, junction-case max | RthJC | 0.48 | /W | |
| Thermal resistance, junction-ambient max | RthJA | 62.5 | /W |
Applications
- Premium OLED TV
- PFC Power Supply Stages
- Switching Applications
- Adapter
2509121533_MagnaChip-Semicon-MMUB65R115RURH_C51891822.pdf
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