MCC SI2302A TP N Channel enhancement mode transistor featuring low RDS ON and wide temperature range

Key Attributes
Model Number: SI2302A-TP
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
55mΩ@4.5V,3.6A
Gate Threshold Voltage (Vgs(th)):
650mV
Reverse Transfer Capacitance (Crss@Vds):
45pF@10V
Number:
1 N-channel
Input Capacitance(Ciss):
237pF@10V
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
SI2302A-TP
Package:
SOT-23
Product Description

Product Overview

The SI2302A is an N-Channel Enhancement Mode Field Effect Transistor designed for high performance and reliability. It features a high-density cell design for extremely low RDS(ON), making it suitable for applications requiring efficient power handling. The product is lead-free, RoHS compliant, and meets UL 94 V-0 flammability rating. It is also available in a halogen-free option upon request. The SI2302A is rugged and reliable, with a wide operating and storage temperature range.

Product Attributes

  • Brand: MCC
  • Product Line: SI2302A
  • Compliance: Lead Free, RoHS Compliant
  • Flammability Rating: UL 94 V-0
  • Moisture Sensitivity Level: 1
  • Available Options: Halogen Free (Suffix "-HF")

Technical Specifications

Parameter Symbol Rating Unit Conditions
Maximum Ratings
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS ±8 V
Drain Current-Continuous ID 3.0 A
Drain Current-Pulsed IDM 10 A (Note 1)
Power Dissipation PD 1.25 W
Operating Junction Temperature Range -55 to +150 °C
Storage Temperature Range -55 to +150 °C
Thermal Resistance (Junction to Ambient) 100 °C/W
Electrical Characteristics (Ta=25°C unless otherwise specified)
Drain-Source Breakdown Voltage V(BR)DSS 20 V VGS=0V, ID=10µA
Gate-Threshold Voltage VGS(th) 0.65 to 1.2 V VDS=VGS, ID=50µA (Note 3)
Gate-Body Leakage Current IGSS ±100 nA VGS=±8V, VDS=0V
Zero Gate Voltage Drain Current IDSS 1 µA VDS=20V, VGS=0V
Drain-Source On-Resistance RDS(on) 72 VGS=4.5V, ID=3.6A (Note 3)
Forward Transconductance gFS 8.5 S VDS=5V, ID=3.6A (Note 3)
Dynamic Characteristics (Note 4)
Input Capacitance Ciss 237 pF VDS=10V,VGS=0V, f=1MHz
Output Capacitance Coss 120 pF VDS=10V,VGS=0V, f=1MHz
Reverse Transfer Capacitance Crss 45 pF VDS=10V,VGS=0V, f=1MHz
Switching Characteristics (Note 4)
Turn-On Delay Time td(on) 30 ns VDD=10V, VGS=4.5V, ID=3.6A, RGEN=6Ω
Turn-On Rise Time tr 34 ns VDD=10V, VGS=4.5V, ID=3.6A, RGEN=6Ω
Turn-Off Delay Time td(off) 55 ns VDD=10V, VGS=4.5V, ID=3.6A, RGEN=6Ω
Turn-Off Fall Time tf 82 ns VDD=10V, VGS=4.5V, ID=3.6A, RGEN=6Ω
Total Gate Charge Qg 11 nC VDS=10V, VGS=4.5V, ID=3.6A
Gate-Source Charge Qgs 1.4 nC VDS=10V, VGS=4.5V, ID=3.6A
Gate-Drain Charge Qgd 1.8 nC VDS=10V, VGS=4.5V, ID=3.6A
Drain-Source Diode Characteristics
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=0.94A (Note 3)
Drain-Source Diode Forward Current IS 0.94 A (Note 2)
Dimensions (SOT-23)
Dimension Symbol Min (inches) Max (inches) Min (mm) Max (mm)
A 0.110 0.120 2.80 3.04
B 0.083 0.104 2.10 2.64
C 0.047 0.055 1.20 1.40
D 0.034 0.041 0.85 1.05
E 0.067 0.083 1.70 2.10
F 0.018 0.024 0.45 0.60
G 0.0004 0.006 0.01 0.15
H 0.035 0.043 0.90 1.10
J 0.003 0.007 0.08 0.18
K 0.012 0.020 0.30 0.51
L 0.020 0.50
0.007 0.200 0.079 2.000
0.031 0.800 0.035 0.900
0.037 0.950 0.037 0.950
Ordering Information
Device Packing Part Number
SI2302A Tape&Reel:3Kpcs/Reel Part Number-TP
(Halogen Free) Part Number-TP-HF

2008101234_MCC-SI2302A-TP_C668996.pdf

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