MCC SI2302A TP N Channel enhancement mode transistor featuring low RDS ON and wide temperature range
Product Overview
The SI2302A is an N-Channel Enhancement Mode Field Effect Transistor designed for high performance and reliability. It features a high-density cell design for extremely low RDS(ON), making it suitable for applications requiring efficient power handling. The product is lead-free, RoHS compliant, and meets UL 94 V-0 flammability rating. It is also available in a halogen-free option upon request. The SI2302A is rugged and reliable, with a wide operating and storage temperature range.
Product Attributes
- Brand: MCC
- Product Line: SI2302A
- Compliance: Lead Free, RoHS Compliant
- Flammability Rating: UL 94 V-0
- Moisture Sensitivity Level: 1
- Available Options: Halogen Free (Suffix "-HF")
Technical Specifications
| Parameter | Symbol | Rating | Unit | Conditions | |
|---|---|---|---|---|---|
| Maximum Ratings | |||||
| Drain-Source Voltage | VDS | 20 | V | ||
| Gate-Source Voltage | VGS | ±8 | V | ||
| Drain Current-Continuous | ID | 3.0 | A | ||
| Drain Current-Pulsed | IDM | 10 | A | (Note 1) | |
| Power Dissipation | PD | 1.25 | W | ||
| Operating Junction Temperature Range | -55 to +150 | °C | |||
| Storage Temperature Range | -55 to +150 | °C | |||
| Thermal Resistance (Junction to Ambient) | 100 | °C/W | |||
| Electrical Characteristics (Ta=25°C unless otherwise specified) | |||||
| Drain-Source Breakdown Voltage | V(BR)DSS | 20 | V | VGS=0V, ID=10µA | |
| Gate-Threshold Voltage | VGS(th) | 0.65 to 1.2 | V | VDS=VGS, ID=50µA (Note 3) | |
| Gate-Body Leakage Current | IGSS | ±100 | nA | VGS=±8V, VDS=0V | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=20V, VGS=0V | |
| Drain-Source On-Resistance | RDS(on) | 72 | mΩ | VGS=4.5V, ID=3.6A (Note 3) | |
| Forward Transconductance | gFS | 8.5 | S | VDS=5V, ID=3.6A (Note 3) | |
| Dynamic Characteristics (Note 4) | |||||
| Input Capacitance | Ciss | 237 | pF | VDS=10V,VGS=0V, f=1MHz | |
| Output Capacitance | Coss | 120 | pF | VDS=10V,VGS=0V, f=1MHz | |
| Reverse Transfer Capacitance | Crss | 45 | pF | VDS=10V,VGS=0V, f=1MHz | |
| Switching Characteristics (Note 4) | |||||
| Turn-On Delay Time | td(on) | 30 | ns | VDD=10V, VGS=4.5V, ID=3.6A, RGEN=6Ω | |
| Turn-On Rise Time | tr | 34 | ns | VDD=10V, VGS=4.5V, ID=3.6A, RGEN=6Ω | |
| Turn-Off Delay Time | td(off) | 55 | ns | VDD=10V, VGS=4.5V, ID=3.6A, RGEN=6Ω | |
| Turn-Off Fall Time | tf | 82 | ns | VDD=10V, VGS=4.5V, ID=3.6A, RGEN=6Ω | |
| Total Gate Charge | Qg | 11 | nC | VDS=10V, VGS=4.5V, ID=3.6A | |
| Gate-Source Charge | Qgs | 1.4 | nC | VDS=10V, VGS=4.5V, ID=3.6A | |
| Gate-Drain Charge | Qgd | 1.8 | nC | VDS=10V, VGS=4.5V, ID=3.6A | |
| Drain-Source Diode Characteristics | |||||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=0.94A (Note 3) | |
| Drain-Source Diode Forward Current | IS | 0.94 | A | (Note 2) | |
| Dimensions (SOT-23) | |||||
| Dimension | Symbol | Min (inches) | Max (inches) | Min (mm) | Max (mm) |
| A | 0.110 | 0.120 | 2.80 | 3.04 | |
| B | 0.083 | 0.104 | 2.10 | 2.64 | |
| C | 0.047 | 0.055 | 1.20 | 1.40 | |
| D | 0.034 | 0.041 | 0.85 | 1.05 | |
| E | 0.067 | 0.083 | 1.70 | 2.10 | |
| F | 0.018 | 0.024 | 0.45 | 0.60 | |
| G | 0.0004 | 0.006 | 0.01 | 0.15 | |
| H | 0.035 | 0.043 | 0.90 | 1.10 | |
| J | 0.003 | 0.007 | 0.08 | 0.18 | |
| K | 0.012 | 0.020 | 0.30 | 0.51 | |
| L | 0.020 | 0.50 | |||
| 0.007 | 0.200 | 0.079 | 2.000 | ||
| 0.031 | 0.800 | 0.035 | 0.900 | ||
| 0.037 | 0.950 | 0.037 | 0.950 | ||
| Ordering Information | |||||
| Device | Packing | Part Number | |||
| SI2302A | Tape&Reel:3Kpcs/Reel | Part Number-TP | |||
| (Halogen Free) | Part Number-TP-HF | ||||
2008101234_MCC-SI2302A-TP_C668996.pdf
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