High speed switching N channel MOSFET MagnaChip Semicon MDD14N25CRH with 0.28 ohm RDS ON and 250V VDS
Key Attributes
Model Number:
MDD14N25CRH
Product Custom Attributes
Drain To Source Voltage:
250V
Current - Continuous Drain(Id):
10.2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
280mΩ@10V,5.1A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
15pF
Number:
1 N-channel
Input Capacitance(Ciss):
741pF
Output Capacitance(Coss):
142pF
Pd - Power Dissipation:
69.4W
Gate Charge(Qg):
20nC@10V
Mfr. Part #:
MDD14N25CRH
Package:
TO-252-2(DPAK)
Product Description
Product Overview
The MDD14N25C is an N-channel MOSFET manufactured using MagnaChip's advanced MOSFET technology. It offers low on-state resistance, high switching performance, and excellent quality, making it suitable for SMPS, high-speed switching, and general-purpose applications. Key features include a VDS of 250V, ID of 10.2A, and RDS(ON) of 0.28 @ VGS = 10V. Applications include power supplies, motor control, and high current, high-speed switching.
Product Attributes
- Brand: MagnaChip Semiconductor Ltd.
- Certifications: Halogen Free
Technical Specifications
| Part Number | N-channel MOSFET | 250V | 10.2A | 0.28 | VDS (V) | ID (A) | RDS(ON) () | Package | Temp. Range (C) |
| MDD14N25CRH | N-channel MOSFET | 250 | 10.2 | 0.28 | 250 | 10.2 | 0.28 (VGS=10V) | D-pak | -55~150 |
| Characteristic | Symbol | Rating | Unit | Test Condition |
| Drain-Source Voltage | VDSS | 250 | V | |
| Gate-Source Voltage | VGSS | 30 | V | |
| Continuous Drain Current | ID | 10.2 | A | TC=25oC |
| 6.4 | A | TC=100oC | ||
| Pulsed Drain Current | IDM | 40.8 | A | (1) |
| Power Dissipation | PD | 69.4 | W | TC=25oC |
| 0.56 | W/ oC | Derivate above 25 oC | ||
| Peak Diode Recovery dv/dt | dv/dt | 4.5 | V/ns | (3) |
| Repetitive Avalanche Energy | EAR | 6.94 | mJ | (1) |
| Avalanche current | IAR | 10.2 | A | (1) |
| Single Pulse Avalanche Energy | EAS | 550 | mJ | (4) |
| Junction and Storage Temperature Range | TJ, Tstg | -55~150 | oC | |
| Thermal Resistance, Junction-to-Ambient | RJA | 110 | oC/W | (1) |
| Thermal Resistance, Junction-to-Case | RJC | 1.8 | oC/W | (1) |
| Drain-Source Breakdown Voltage | BVDSS | 250 | V | ID = 250A, VGS = 0V |
| Gate Threshold Voltage | VGS(th) | 2.0 - 4.0 | V | VDS = VGS, ID = 250A |
| Drain Cut-Off Current | IDSS | - | 1 A | VDS = 250V, VGS = 0V |
| Gate Leakage Current | IGSS | - | 100 nA | VGS = 30V, VDS = 0V |
| Drain-Source ON Resistance | RDS(ON) | - 0.28 | VGS = 10V, ID = 5.1 A | |
| Forward Transconductance | gfs | - 8.5 | S | VDS = 30V, ID = 5.1A |
| Total Gate Charge | Qg | - 20.0 | nC | VDS = 200V, ID = 14.0A, VGS = 10V |
| Gate-Source Charge | Qgs | - 4.5 | - | |
| Gate-Drain Charge | Qg d | - 8.9 | - | |
| Input Capacitance | Ciss | - 741 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz |
| Reverse Transfer Capacitance | Crss | - 15 | pF | |
| Output Capacitance | Coss | - 142 | pF | |
| Turn-On Delay Time | td(on) | - 13 | ns | VGS = 10V, VDS = 125V, ID = 14.0A, RG = 25(3) |
| Rise Time | tr | - 42 | ns | |
| Turn-Off Delay Time | td(off) | - 44 | ns | |
| Fall Time | tf | - 28 | ns | |
| Maximum Continuous Drain to Source Diode Forward Current | IS | - 10.2 | A | |
| Source-Drain Diode Forward Voltage | VSD | - 1.4 | V | IS = 10.2A, VGS = 0V |
| Body Diode Reverse Recovery Time | trr | - 174 | ns | IF = 14.0A, dl/dt = 100A/s(3) |
| Body Diode Reverse Recovery Charge | Qrr | - 1.0 | C |
1809291616_MagnaChip-Semicon-MDD14N25CRH_C108997.pdf
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