Switching 1200V Field Stop Trench IGBT MagnaChip Semicon MBQ40T120QESTH Featuring Ultra Soft Fast Recovery Diode
Product Overview
The Magnachip MBQ40T120QESTH is a high-speed 1200V Field Stop Trench IGBT designed for applications requiring efficient switching and low power loss. Leveraging Magnachip's advanced Field Stop Trench IGBT Technology, this device offers a low VCE(SAT) of 2.1V at 40A, high switching performance, and excellent quality. It features an ultra-soft, fast recovery anti-parallel diode with ultra-narrowed VF distribution control and a positive temperature coefficient for easy paralleling. Ideal for PFC, UPS, and inverter applications, this IGBT provides reliable performance in demanding industrial environments.
Product Attributes
- Brand: Magnachip Semiconductor Ltd.
- Technology: Field Stop Trench IGBT
- Diode Type: Ultra-Soft, fast recovery anti-parallel diode
- Package Type: TO-247
- Certifications: Halogen Free
- Revision: 1.2 (Jul. 2021)
Technical Specifications
| Symbol | Characteristics | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VCES | Collector-emitter voltage | 1200 | V | |||
| VGE | Gate-emitter voltage | 20 | V | |||
| IC | DC collector current, limited by Tvjmax | TC=25C | 80 | A | ||
| IC | DC collector current, limited by Tvjmax | TC=100C | 40 | A | ||
| ICpuls | Pulsed collector current, tp limited by Tjvjmax | 160 | A | |||
| IF | Diode forward current, limited by Tvjmax | TC=25C | 80 | A | ||
| IF | Diode forward current, limited by Tvjmax | TC=100C | 40 | A | ||
| IFpuls | Diode pulsed current, Pulse time limited by Tjmax | 160 | A | |||
| PD | Power dissipation | TC=25C | 428 | W | ||
| PD | Power dissipation | TC=100C | 214 | W | ||
| tSC | Short circuit withstand time | VCE = 500V, VGE = 15V, TC = 150C | 3 | s | ||
| Tvj | Operating Junction temperature range | -40 | ~175 | C | ||
| Tstg | Storage temperature range | -55 | ~150 | C | ||
| Thermal Characteristics | ||||||
| Rth(j-a) | Thermal resistance junction-to-ambient | 40 | C/W | |||
| Rth(j-c) | Thermal resistance junction-to-case for IGBT | 0.35 | ||||
| Rth(j-c) | Thermal resistance junction-to-case for Diode | 0.8 | ||||
| Electrical Characteristics (Tvj = 25C unless otherwise specified) | ||||||
| BVCES | Collector-emitter breakdown voltage | IC = 1mA, VGE = 0V | 1200 | - | - | V |
| VCE(sat) | Collector-emitter saturation voltage | IC = 40A, VGE= 15V, Tvj = 25C | - | 2.1 | 2.7 | V |
| VCE(sat) | Collector-emitter saturation voltage | IC = 40A, VGE= 15V, Tvj = 175C | - | 2.75 | - | V |
| VF | Diode forward voltage | VGE = 0V, IF = 40A, Tvj = 25C | - | 1.95 | 2.50 | V |
| VF | Diode forward voltage | VGE = 0V, IF = 40A, Tvj = 175C | - | 2.05 | - | V |
| VGE(th) | Gate-emitter threshold voltage | VCE = VGE, IC = 1mA | 4.0 | 5.0 | 6.0 | V |
| ICES | Zero gate voltage collector current | VCE = 1200V, VGE = 0V | - | - | 1 | mA |
| IGES | Gate-emitter leakage current | VGE = 20V, VCE = 0V | - | - | 250 | nA |
| Dynamic Characteristics | ||||||
| Qg | Total gate charge | VCE = 960V, IC = 40A, VGE = 15V | - | 428 | - | nC |
| Qge | Gate-emitter charge | - | 56 | - | ||
| Qgc | Gate-collector charge | - | 232 | - | ||
| Cies | Input capacitance | VCE = 30V, VGE = 0V, f = 1MHz | - | 6780 | - | pF |
| Coes | Output capacitance | - | 158 | - | pF | |
| Cres | Reverse transfer capacitance | - | 86 | - | pF | |
| Switching Characteristics (Tvj = 25C) | ||||||
| td(on) | Turn-on delay time | VGE = 15V, VCC = 600V, IC = 40A, RG = 10, Inductive Load | - | 74 | - | ns |
| tr | Rise time | - | 114 | - | ns | |
| td(off) | Turn-off delay time | - | 178 | - | ns | |
| tf | Fall time | - | 95 | - | ns | |
| Eon | Turn-on switching energy | - | 5.13 | - | mJ | |
| Eoff | Turn-off switching energy | - | 0.77 | - | mJ | |
| Ets | Total switching energy | - | 5.90 | - | mJ | |
| Switching Characteristics (Tvj = 175C) | ||||||
| td(on) | Turn-on delay time | VGE = 15V, VCC = 600V, IC = 40A, RG = 10, Inductive Load | - | 67 | - | ns |
| tr | Rise time | - | 122 | - | ns | |
| td(off) | Turn-off delay time | - | 193 | - | ns | |
| tf | Fall time | - | 134 | - | ns | |
| Eon | Turn-on switching energy | - | 7.47 | - | mJ | |
| Eoff | Turn-off switching energy | - | 1.44 | - | mJ | |
| Ets | Total switching energy | - | 8.91 | - | mJ | |
| Diode Characteristics | ||||||
| trr | Reverse recovery time | IF = 40A, diF/dt = 300A/ s, Tvj = 25C | - | 285 | - | ns |
| Irr | Reverse recovery current | - | 15 | - | A | |
| Qrr | Reverse recovery charge | - | 2.09 | - | uC | |
| trr | Reverse recovery time | IF = 40A, diF/dt = 300A/ s, Tvj = 175C | - | 472 | - | ns |
| Irr | Reverse recovery current | - | 20 | - | A | |
| Qrr | Reverse recovery charge | - | 4.55 | - | uC | |
Package Dimensions (TO-247)
| Dimension | Min(mm) | Max(mm) |
|---|---|---|
| A | 4.70 | 5.31 |
| A1 | 2.20 | 2.60 |
| A2 | 1.50 | 2.49 |
| b | 0.99 | 1.40 |
| b1 | 2.59 | 3.43 |
| b2 | 1.65 | 2.39 |
| c | 0.38 | 0.89 |
| D | 20.30 | 21.46 |
| D1 | 13.08 | - |
| E | 15.45 | 16.26 |
| E1 | 13.06 | 14.02 |
| E2 | 4.32 | 5.49 |
| e | 5.45BSC | |
| L | 19.81 | 20.57 |
| L1 | - | 4.50 |
| P | 3.50 | 3.70 |
| Q | 5.38 | 6.20 |
| S | 6.15BSC |
Note: Package body size, length and width do not include mold flash, protrusions and gate burrs.
Disclaimer: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Sellers customers using or selling Sellers products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. Magnachip reserves the right to change the specifications and circuitry without notice at any time. Magnachip does not consider responsibility for use of any circuitry other than circuitry entirely included in a Magnachip product. is a registered trademark of Magnachip Semiconductor Ltd.
2411220027_MagnaChip-Semicon-MBQ40T120QESTH_C41348477.pdf
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