86--136 6733 2386
quality N Channel MOSFET Trench LV Technology MCC SI2304 TP Voltage Controlled Small Signal Switching Device factory
quality N Channel MOSFET Trench LV Technology MCC SI2304 TP Voltage Controlled Small Signal Switching Device factory

N Channel MOSFET Trench LV Technology MCC SI2304 TP Voltage Controlled Small Signal Switching Device

Key Attributes
Model Number: SI2304-TP
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
2.5A
RDS(on):
90mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
35pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
229pF@15V
Pd - Power Dissipation:
1W
Gate Charge(Qg):
5.4nC@10V
Mfr. Part #:
SI2304-TP
Package:
SOT-23
Product Description

Product Overview

The SI2304 is an N-Channel MOSFET featuring Trench LV MOSFET Technology, designed for voltage-controlled small signal switching applications. It is a "Green" device, Halogen Free, and meets UL 94 V-0 flammability rating. This RoHS compliant component is suitable for a wide operating temperature range from -55C to +150C.

Product Attributes

  • Brand: MCC SEMI
  • Technology: Trench LV MOSFET
  • Moisture Sensitivity Level: 1
  • Flammability Rating: UL 94 V-0
  • Compliance: Halogen Free, RoHS Compliant

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Maximum Ratings
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current ID TA=25°C 2.5 A
Continuous Drain Current ID TA=70°C 1 A
Pulsed Drain Current IDM (Note 3) 10 A
Total Power Dissipation PD (Note 4) 1.25 W
Operating Junction Temperature Range -55 +150 °C
Storage Temperature -55 +150 °C
Thermal Resistance Junction to Ambient RθJA (Note 2) 125 °C/W
Electrical Characteristics
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250µA 30 V
Gate-Threshold Voltage VGS(th) VDS=VGS, ID=250µA 1.0 2.0 V
Gate-Body Leakage Current IGSS VGS=±20V, VDS=0V ±100 nA
Zero Gate Voltage Drain Current IDSS VDS=30V, VGS=0V 1.5 µA
Drain-Source On-Resistance RDS(on) VGS=10V, ID=2.5A 65 mΩ
Forward Transconductance gFS VDS=4.5V, ID=2.5A 28 38 S
Continuous Body Diode Current IS 2.5 A
Diode Forward Voltage VSD VGS=0V, IS=1.25A 1.2 V
Input Capacitance Ciss VDS=15V,VGS=0V,f=1MHz 229 pF
Output Capacitance Coss VDS=15V,VGS=0V,f=1MHz 43 pF
Reverse Transfer Capacitance Crss VDS=15V,VGS=0V,f=1MHz 35 pF
Total Gate Charge Qg VDS=15V,VGS=10V,ID=2.5A 7 nC
Gate-Source Charge Qgs VDS=15V,VGS=10V,ID=2.5A 1.2 nC
Gate-Drain Charge Qgd VDS=15V,VGS=10V,ID=2.5A 0.8 nC
Turn-On Delay Time td(on) VDD=15V,VGS=10V, RG=2.2Ω, ID=1A 5.4 ns
Turn-On Rise Time tr VDD=15V,VGS=10V, RG=2.2Ω, ID=1A 16 ns
Turn-Off Delay Time td(off) VDD=15V,VGS=10V, RG=2.2Ω, ID=1A 4 ns
Turn-Off Fall Time tf VDD=15V,VGS=10V, RG=2.2Ω, ID=1A 1.4 ns
Reverse Recovery Time trr IF=2.5A, dIF/dt=270A/μs 10 ns
Reverse Recovery Charge Qrr IF=2.5A, dIF/dt=270A/μs 22 nC
Gate Resistance Rg 2 Ω
Package Dimensions (SOT-23)
DIM INCHES MM DIM INCHES MM
A 0.110 - 0.120 2.80 - 3.04 G 0.0004 - 0.006 0.01 - 0.15
B 0.083 - 0.104 2.10 - 2.64 H 0.035 - 0.043 0.90 - 1.10
C 0.047 - 0.055 1.20 - 1.40 J 0.003 - 0.007 0.08 - 0.18
D 0.034 - 0.041 0.85 - 1.05 K 0.012 - 0.020 0.30 - 0.51
E 0.067 - 0.083 1.70 - 2.10 L 0.020 0.50
F 0.018 - 0.024 0.45 - 0.60

2404031245_MCC-SI2304-TP_C3289998.pdf

Related Products
quality Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications factory
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
quality Zener diode YANGJIE BZT52C3V0SQ featuring moisture sensitivity level 1 and solderable tin plated leads factory
Zener diode YANGJIE BZT52C3V0SQ featuring moisture sensitivity level 1 and solderable tin plated leads
Product OverviewThe BZT52C2V4SQ thru BZT52C47SQ series are small signal Zener diodes designed for general regulation functions, including automotive applications. They feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. These diodes offer ...
quality RoHS Compliant NPN Amplifier YANGJIE S8050-H with Epoxy Casing and Collector Power Dissipation 300mW factory
RoHS Compliant NPN Amplifier YANGJIE S8050-H with Epoxy Casing and Collector Power Dissipation 300mW
Product OverviewThe S8050-L through S8050-H series are NPN general-purpose amplifiers manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. These components are designed for general amplification applications and feature an epoxy casing that meets UL-94 V-0 flammability rating. Halogen...
quality Planar die Zener diode XZT BZT52B9V1S designed for medium current applications and automated assembly factory
Planar die Zener diode XZT BZT52B9V1S designed for medium current applications and automated assembly
Product OverviewThe BZT52B2V4S thru BZT52B43S series are Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in a lead-free version. These diodes feature a planar die construction.Product AttributesBrand: ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.