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quality MCC SI2305B TP P Channel MOSFET with Gate Source Voltage of 10 Volts and Moisture Sensitivity Level 1 factory
quality MCC SI2305B TP P Channel MOSFET with Gate Source Voltage of 10 Volts and Moisture Sensitivity Level 1 factory

MCC SI2305B TP P Channel MOSFET with Gate Source Voltage of 10 Volts and Moisture Sensitivity Level 1

Key Attributes
Model Number: SI2305B-TP
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4.2A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
60mΩ@4.5V,2.7A
Gate Threshold Voltage (Vgs(th)):
900mV
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 P-Channel
Input Capacitance(Ciss):
740pF@4V
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
15nC@4.5V
Mfr. Part #:
SI2305B-TP
Package:
SOT-23
Product Description

Product Overview

The SI2305B is a P-Channel MOSFET designed for various applications. It features low RDS(ON) and meets UL 94 V-0 flammability rating. This device is moisture sensitivity level 1 and is RoHS compliant, with a halogen-free option available. It operates within a junction temperature range of -55C to +150C.

Product Attributes

  • Brand: MCCSEMI
  • Flammability Rating: UL 94 V-0
  • Moisture Sensitivity Level: 1
  • RoHS Compliant: Yes
  • Halogen Free: Available upon request (add "-HF" suffix)

Technical Specifications

Parameter Symbol Rating Unit Test Conditions
Drain-Source Voltage VDS -20 V
Gate-Source Voltage VGS 10 V
Drain Current-Continuous ID -4.2 A
Drain Current-Pulse IDM -21 A (Note 2)
Power Dissipation PD 1.4 W
Operating Junction Temperature Range TJ -55 to +150 C
Storage Temperature TSTG -55 to +150 C
Thermal Resistance RJA 90 C/W Junction to Ambient (Note 1)
Drain-Source Breakdown Voltage V(BR)DSS -20 V VGS=0V, ID=-250A
Gate-Threshold Voltage VGS(th) -0.5 to -0.9 V VDS=VGS, ID=-250A
Gate-Body Leakage Current IGSS 100 nA VGS =10V, VDS=0V
Zero Gate Voltage Drain Current IDSS -1 A VDS =-20V, VGS=0V
Drain-Source On-Resistance RDS(on) 35 to 60 m VGS=-4.5V, ID=-2.7A (Note 3)
46 to 80 m VGS=-2.5V, ID=-2.7A (Note 3)
90 m VGS=-1.8V, ID=-2.7A (Note 3)
Forward Tranconductance gFS 6 S VDS=-5V, ID=-4.1A (Note 3)
Input Capacitance Ciss 740 pF VDS=-4V,VGS=-4.5V, f=1MHz (Note 1,4)
Output Capacitance Coss 290 pF VDS=-4V,VGS=-4.5V, f=1MHz (Note 1,4)
Reverse Transfer Capacitance Crss 190 pF VDS=-4V,VGS=-4.5V, f=1MHz (Note 1,4)
Total Gate Charge Qg 7.8 nC VDS=-4V,VGS=-2.5V,ID=-4.1A (Note 1)
Gate-Source Charge Qgs 1.2 nC VDS=-4V,VGS=-4.5V,ID=-4.1A (Note 1)
Gate-Drain Charge Qgd 1.6 nC VDS=-4V,VGS=-4.5V,ID=-4.1A (Note 1)
Gate Resistance Rg 1.4 to 7 f=1MHz (Note 1,4)
Turn-On Delay Time td(on) 13 to 20 ns VDD=-4V,VGEN=-4.5V,RL=1.2, ID=-3.3A,RG=1 (Note 1,4)
5 to 10 ns VDD=-4V,VGEN=-8V,RL=1.2, ID=-3.3A,RG=1 (Note 1,4)
Turn-On Rise Time tr 35 to 53 ns VDD=-4V,VGEN=-4.5V,RL=1.2, ID=-3.3A,RG=1 (Note 1,4)
11 to 17 ns VDD=-4V,VGEN=-8V,RL=1.2, ID=-3.3A,RG=1 (Note 1,4)
Turn-Off Delay Time td(off) 32 to 48 ns VDD=-4V,VGEN=-4.5V,RL=1.2, ID=-3.3A,RG=1 (Note 1,4)
22 to 33 ns VDD=-4V,VGEN=-8V,RL=1.2, ID=-3.3A,RG=1 (Note 1,4)
Turn-Off Fall Time tf 10 to 20 ns VDD=-4V,VGEN=-4.5V,RL=1.2, ID=-3.3A,RG=1 (Note 1,4)
16 to 24 ns VDD=-4V,VGEN=-8V,RL=1.2, ID=-3.3A,RG=1 (Note 1,4)
Continuous Source-Drain Diode Current IS -4.2 A TC=25oC
Pulse Diode Forward Current ISM -10 A (Note 3)
Body Diode Voltage VSD -0.8 to -1.2 V IF=-3.3A (Note 3)

Ordering Information

Device Packing Part Number
SI2305B Tape&Reel:3Kpcs/Reel -TP

Note: Add "-HF" Suffix For Halogen Free, e.g., Part Number-TP-HF.


2008101234_MCC-SI2305B-TP_C668997.pdf

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