switching MOSFET MASPOWER MS100N60ICC0 with 650V drain source voltage and 100A continuous drain current
Key Attributes
Model Number:
MS100N60ICC0
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
100A
RDS(on):
33.5mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3.8V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
12.4pF
Number:
1 N-channel
Pd - Power Dissipation:
1.041kW
Output Capacitance(Coss):
181pF
Input Capacitance(Ciss):
8.395nF
Gate Charge(Qg):
170nC@10V
Mfr. Part #:
MS100N60ICC0
Package:
TO-247
Product Description
Product Overview
The MS100N60ICB3(C0) is a high-performance N-channel Power MOSFET from Maspower, designed for demanding power applications. It features ultra-low RDS(on) of 33.5m (typ.) and ultra-low gate charge, with 100% UIS tested for reliability. This RoHS compliant component is ideal for Power Factor Correction (PFC), Switched Mode Power Supplies (SMPS), and Uninterruptible Power Supplies (UPS).
Product Attributes
- Brand: Maspower
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | TO-264 | TO-247 | Unit | Notes | |
| Absolute Ratings | ||||||
| Drain-Source Voltage | VDSS | 650 | V | |||
| Transient Gate-Source Voltage | VGSM | 30 | V | |||
| Continuous Gate-Source Voltage (DC) | VGSS | 20 | V | |||
| Drain Current - continuous (TC=25) | ID | 100 | A | |||
| Drain Current - continuous (TC=100) | ID | 50 | A | |||
| Drain Current - pulse | IDM | 400 | A | 1 | ||
| Avalanche current-single pulse | IAS | 16 | A | |||
| Single Pulsed Avalanche Energy | EAS | 64 | mJ | 2 | ||
| Repetitive Avalanche current | IAR | 13 | A | |||
| Repetitive Avalanche Energy | EAR | 42.25 | mJ | |||
| Power Dissipation | PD | 1041 | 390 | W | ||
| Operating and Storage Temperature Range | TJ,TSTG | -55~+150 | ||||
| Soldering temperature, wave soldering only allowed at leads.(1.6mm for 10s) | Tsold | 260 | ||||
| Electrical Characteristics | ||||||
| Drain-Source Voltage | BVDSS | ID=250uA,VGS=0V | 650 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=600V,VGS=0V | 10 | uA | ||
| Gate-body leakage current | IGSS | VDS=0V,VGS=20V | 200 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250uA | 3.0 | 4.6 | V | 3.8 (Typ) |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=40A, TC=25 | - | 43 | m | 33.5 (Typ) |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=40A, TC=125 | - | 77 | m | |
| Forward Transconductance | gfs | VDS=10V,ID=40A | 95.7 | S | 4 | |
| Dynamic Characteristics | ||||||
| Gate resistance | Rg | F=1.0MHz open drain | 4.28 | |||
| Input capacitance | Ciss | VDS=400V, VGS=0V, f=250kHz | 8395 | pF | ||
| Output capacitance | Coss | 181 | pF | |||
| Reverse transfer capacitance | Crss | 12.4 | pF | |||
| Switching Characteristics | ||||||
| Turn-On delay time | td(on) | VDD=300V,ID=25A, VGS=10V,RG=3.3 | 54 | ns | 4,5 | |
| Turn-On rise time | tr | 67 | ns | |||
| Turn-Off delay time | td(off) | 147 | ns | |||
| Turn-Off Fall time | tf | 50 | ns | |||
| Total Gate Charge | Qg | VDS=300V,ID=25A, VGS=0 to 10V | 170 | nC | 4,5 | |
| Gate-Source charge | Qgs | 61.9 | nC | |||
| Gate-Drain charge | Qg d | 51 | nC | |||
| Gate-plateau voltage | Vp | 6.5 | V | |||
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Continuous Diode Forward Current | IS | TC=25 | 80 | A | ||
| Diode Pulsed Current | ISM | TC=25 | 240 | A | ||
| Drain-Source Diode Forward Voltage | VSD | VGS=0V,IS=1A | 0.64 | 1.2 | V | |
| Reverse recovery time | trr | VGS=0V,IS=25A dIF/dt=100A/us VR=300V | 199.6 | ns | 4 | |
| Reverse recovery charge | Qrr | 1996 | nC | |||
| Peak reverse recovery current | IRRM | 19 | A | |||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction-to-Case, Max | Rth(J-C) | 0.12 | 0.32 | /W | ||
| Thermal Resistance, Junction-to-Ambient, Max | Rth(J-A) | 30 | 52 | /W | ||
Notes:
1: Pulse width limited by maximum junction temperature
2: L=0.5mH, IAS=16A, VDD=50V, Starting TJ=25
3: ISD10A, di/dt200A/us, VDDBVDSS, Starting TJ=25
4: Pulse Test: Pulse Width200us, Duty Cycle2%
5: Essentially independent of operating temperature
2508261540_MASPOWER-MS100N60ICC0_C50726500.pdf
Related Products
High Reliability Surface Mounted Rectifier ZHIDE SS510A Molded Plastic Epoxy UL 94V 0 Flame Retardant
Product OverviewThe SS52A-SS520A series are surface-mounted Schottky barrier rectifiers designed for high-reliability applications. They offer low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering. These rectifiers are compliant with RoHS standards, ...
Compact surface mount bridge rectifier YONGYUTAI DB157S with plated solderable leads and ABS housing
Product OverviewThis series of bridge rectifiers features glass passivated die construction, offering a low forward voltage drop and high current/surge current capabilities. Designed for surface mount applications, these rectifiers are constructed from UL 94V-0 rated plastic material. They are ...
Surface mount ZHIDE ES5D rectifier with low leakage current and 100 volt maximum DC blocking voltage
Product OverviewThe ES5A-ES5M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, with guaranteed high-temperature soldering. These rectifiers are RoHS compliant ...
Zener diode YANGJIE BZX584B15VQ with 15 volt Zener voltage and 2 percent tolerance in compact SOD523 package
Product OverviewThe BZX584B3V6Q thru BZX584B36VQ series are small signal Zener diodes designed for general regulation functions. They feature an epoxy case that meets UL-94 V-0 flammability rating and is halogen-free, with Moisture Sensitivity Level 1. These diodes offer Zener voltages ranging from ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
