Industrial grade MS100N20HGC0 Maspower N channel MOSFET suitable for DC DC converter power switching
Key Attributes
Model Number:
MS100N20HGC0
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+150℃
RDS(on):
38mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
78pF
Number:
1 N-channel
Output Capacitance(Coss):
734pF
Pd - Power Dissipation:
300W
Input Capacitance(Ciss):
4.4nF
Gate Charge(Qg):
123nC@10V
Mfr. Part #:
MS100N20HGC0
Package:
TO-247
Product Description
Product Overview
The MS100N20HGC0 H1.04 Maspower is a high-performance N-channel MOSFET designed for power switching applications. It features a high-density cell design for ultra-low RDS(on), low gate charge, and improved dv/dt capability. This RoHS-compliant product is suitable for isolated DC/DC converters in telecom and industrial sectors, as well as synchronous rectification in DC/DC converters.
Product Attributes
- Brand: Maspower
- Model: MS100N20HGC0 H1.04
- Certifications: RoHS product
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Absolute Ratings | VDSS | 200 | V | |||
| VGSS | ±20 | V | ||||
| ID | TC=25 | 100 | A | |||
| IDM | (note 1) | 400 | A | |||
| EAS | (note 2) | 560 | mJ | |||
| PD | TC=25 | 300 | W | |||
| Derate above 25 | 2.0 | W/ | ||||
| TJ,TSTG | -55 | +150 | ||||
| Operating and Storage Temperature Range | ||||||
| Electrical Characteristics (TCASE=25 unless otherwise specified) | ||||||
| On-Characteristics | VGS(th) | VDS=VGS,ID=250µA | 3 | 4.5 | V | |
| RDS(ON) | VDS=10V,ID=50A | 0.038 | Ω | |||
| gfs | VDS=50V,ID=50A (note 4) | 52 | S | |||
| Dynamic Characteristics | Ciss | VDS=25V, VGS=0V, f=1MHZ | 4400 | pF | ||
| Coss | 734 | pF | ||||
| Crss | 78 | pF | ||||
| Switching-Characteristics | td(on) | VDD=100V,ID=50A, RG=1.8Ω VGS=10V (note 4,5) | 76.6 | ns | ||
| tr | 120.6 | ns | ||||
| td(Off) | 239 | ns | ||||
| tf | 184 | ns | ||||
| Total Gate Charge (Qg), Gate-Source Charge (Qgs), Gate-Drain Charge (Qgd) | ||||||
| Total Gate Charge | Qg | VDS=200V, ID=50A, VGS=10V (note 4,5) | 123 | nC | ||
| Gate-Source Charge | Qgs | 29.4 | nC | |||
| Gate-Drain Charge | Qgd | 71.25 | nC | |||
| Drain-Source Diode Characteristics | VSD | VGS=0V,IS=100A | 1.3 | V | ||
| trr | IS=50A,DI/DT=100A/ µS | 267 | nS | |||
| Reverse recovery charge | Qrr | 3.2 | µC | |||
| Thermal Characteristic | Rth(j-C) | 0.50 | /W | |||
| Rth(j-A) | 40 | /W | ||||
2411271633_MASPOWER-MS100N20HGC0_C5353698.pdf
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