MCC MCAC50P03B TP P Channel Trench Power LV MOSFET optimized for power management and fast switching
Product Overview
The MCAC50P03B is a P-Channel Trench Power LV MOSFET featuring a high-density cell design for low RDS(ON) and high-speed switching. This device is designed for various applications requiring efficient power management. It is moisture sensitivity level 1, halogen-free, and RoHS compliant, meeting UL 94 V-0 flammability rating.
Product Attributes
- Brand: MCC (Micro Commercial Components)
- Technology: Trench Power LV MOSFET
- Certifications: Halogen Free ("Green" Device), Epoxy Meets UL 94 V-0 Flammability Rating, Lead Free Finish/RoHS Compliant
- Moisture Sensitivity Level: 1
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | ±25 | V | |||
| Continuous Drain Current | ID | TC=100 | -32 | A | ||
| Continuous Drain Current | ID | TC=25 | -83 | A | ||
| Pulsed Drain Current | IDM | (Note 3) | -200 | A | ||
| Total Power Dissipation | PD | (Note 4) | 360 | W | ||
| Single Pulsed Avalanche Energy | EAS | (Note 5) | 360 | mJ | ||
| Operating Junction Temperature Range | -55 | +150 | C | |||
| Storage Temperature Range | -55 | +150 | C | |||
| Thermal Resistance Junction to Ambient | RJA | (Note 2) | 17 | C/W | ||
| Thermal Resistance Junction to Case | RJC | 1.5 | C/W | |||
| Electrical Characteristics @ 25C (Unless Otherwise Specified) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=-250µA | -30 | V | ||
| Gate-Source Leakage Current | IGSS | VDS=0V, VGS =±25V | ±100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-30V, VGS=0V | -1 | µA | ||
| Gate-Threshold Voltage | VGS(th) | VDS=VGS, ID=-250µA | -1.2 | -1.8 | -2.8 | V |
| Drain-Source On-Resistance | RDS(on) | VGS=-10V, ID=-20A | 4 | 5.5 | mΩ | |
| Drain-Source On-Resistance | RDS(on) | VGS=-4.5V, ID=-20A | 6 | 9.5 | mΩ | |
| Gate Resistance | Rg | f=1Mhz,Drain open | 6.5 | Ω | ||
| Diode Characteristics | ||||||
| Continuous Body Diode Current | IS | -50 | A | |||
| Diode Forward Voltage | VSD | VGS=0V, IS=-20A | -1.2 | V | ||
| Reverse Recovery Time | trr | IS=-15A,di/dt=100A/μs | 24 | ns | ||
| Reverse Recovery Charge | Qrr | 8.5 | nC | |||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-15V,VGS=0V,f=1MHz | 6426 | pF | ||
| Output Capacitance | Coss | 754 | pF | |||
| Reverse Transfer Capacitance | Crss | 670 | pF | |||
| Total Gate Charge | Qg | VDS=-15V, VGS=-10V, RG=3Ω, ID=-20A | 111 | nC | ||
| Gate-Source Charge | Qgs | 16 | nC | |||
| Gate-Drain Charge | Qgd | 22.5 | nC | |||
| Turn-On Delay Time | td(on) | 13.6 | ns | |||
| Turn-On Rise Time | tr | 25.7 | ns | |||
| Turn-Off Delay Time | td(off) | 192 | ns | |||
| Turn-Off Fall Time | tf | 90 | ns | |||
| Dimensions (DFN5060) | ||||||
| Dimension | Symbol | Unit | Min | Max | Min | Max |
| A | INCHES | 0.031 | 0.047 | 0.80 | 1.20 | |
| B | MM | 4.90 | 5.64 | |||
| C | INCHES | 0.193 | 0.222 | |||
| D | MM | 5.90 | 6.35 | |||
| E | INCHES | 0.148 | 0.167 | |||
| F | MM | 3.75 | 4.25 | |||
| G | INCHES | 0.126 | 0.154 | |||
| H | MM | 4.80 | 5.40 | |||
| K | INCHES | 0.222 | 0.239 | |||
| J | MM | 5.65 | 6.06 | |||
| L | INCHES | 0.045 | 0.059 | |||
| M | MM | 1.15 | 1.50 | |||
| N | INCHES | 0.012 | 0.020 | |||
| TYP. | 0.30 | 0.50 | ||||
| INCHES | 0.046 | 0.054 | ||||
| MM | 1.17 | 1.37 | ||||
| INCHES | 0.012 | 0.028 | ||||
| MM | 0.30 | 0.71 | ||||
| INCHES | 0.016 | 0.028 | ||||
| MM | 0.40 | 0.71 | ||||
| TYP. | 0.254 | 0.010 | ||||
2404031225_MCC-MCAC50P03B-TP_C3288286.pdf
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