MCC MCAC50P03B TP P Channel Trench Power LV MOSFET optimized for power management and fast switching

Key Attributes
Model Number: MCAC50P03B-TP
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+150℃
RDS(on):
5.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.8V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
670pF
Number:
1 P-Channel
Output Capacitance(Coss):
754pF
Input Capacitance(Ciss):
6.426nF
Pd - Power Dissipation:
83W
Gate Charge(Qg):
111nC@10V
Mfr. Part #:
MCAC50P03B-TP
Package:
DFN5060
Product Description

Product Overview

The MCAC50P03B is a P-Channel Trench Power LV MOSFET featuring a high-density cell design for low RDS(ON) and high-speed switching. This device is designed for various applications requiring efficient power management. It is moisture sensitivity level 1, halogen-free, and RoHS compliant, meeting UL 94 V-0 flammability rating.

Product Attributes

  • Brand: MCC (Micro Commercial Components)
  • Technology: Trench Power LV MOSFET
  • Certifications: Halogen Free ("Green" Device), Epoxy Meets UL 94 V-0 Flammability Rating, Lead Free Finish/RoHS Compliant
  • Moisture Sensitivity Level: 1

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Maximum Ratings
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±25 V
Continuous Drain Current ID TC=100 -32 A
Continuous Drain Current ID TC=25 -83 A
Pulsed Drain Current IDM (Note 3) -200 A
Total Power Dissipation PD (Note 4) 360 W
Single Pulsed Avalanche Energy EAS (Note 5) 360 mJ
Operating Junction Temperature Range -55 +150 C
Storage Temperature Range -55 +150 C
Thermal Resistance Junction to Ambient RJA (Note 2) 17 C/W
Thermal Resistance Junction to Case RJC 1.5 C/W
Electrical Characteristics @ 25C (Unless Otherwise Specified)
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250µA -30 V
Gate-Source Leakage Current IGSS VDS=0V, VGS =±25V ±100 nA
Zero Gate Voltage Drain Current IDSS VDS=-30V, VGS=0V -1 µA
Gate-Threshold Voltage VGS(th) VDS=VGS, ID=-250µA -1.2 -1.8 -2.8 V
Drain-Source On-Resistance RDS(on) VGS=-10V, ID=-20A 4 5.5
Drain-Source On-Resistance RDS(on) VGS=-4.5V, ID=-20A 6 9.5
Gate Resistance Rg f=1Mhz,Drain open 6.5 Ω
Diode Characteristics
Continuous Body Diode Current IS -50 A
Diode Forward Voltage VSD VGS=0V, IS=-20A -1.2 V
Reverse Recovery Time trr IS=-15A,di/dt=100A/μs 24 ns
Reverse Recovery Charge Qrr 8.5 nC
Dynamic Characteristics
Input Capacitance Ciss VDS=-15V,VGS=0V,f=1MHz 6426 pF
Output Capacitance Coss 754 pF
Reverse Transfer Capacitance Crss 670 pF
Total Gate Charge Qg VDS=-15V, VGS=-10V, RG=3Ω, ID=-20A 111 nC
Gate-Source Charge Qgs 16 nC
Gate-Drain Charge Qgd 22.5 nC
Turn-On Delay Time td(on) 13.6 ns
Turn-On Rise Time tr 25.7 ns
Turn-Off Delay Time td(off) 192 ns
Turn-Off Fall Time tf 90 ns
Dimensions (DFN5060)
Dimension Symbol Unit Min Max Min Max
A INCHES 0.031 0.047 0.80 1.20
B MM 4.90 5.64
C INCHES 0.193 0.222
D MM 5.90 6.35
E INCHES 0.148 0.167
F MM 3.75 4.25
G INCHES 0.126 0.154
H MM 4.80 5.40
K INCHES 0.222 0.239
J MM 5.65 6.06
L INCHES 0.045 0.059
M MM 1.15 1.50
N INCHES 0.012 0.020
TYP. 0.30 0.50
INCHES 0.046 0.054
MM 1.17 1.37
INCHES 0.012 0.028
MM 0.30 0.71
INCHES 0.016 0.028
MM 0.40 0.71
TYP. 0.254 0.010

2404031225_MCC-MCAC50P03B-TP_C3288286.pdf

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