Power MOSFET MASPOWER MS130N20JDT0 with 130A Continuous Drain Current and 200V Drain Source Voltage
Key Attributes
Model Number:
MS130N20JDT0
Product Custom Attributes
Drain To Source Voltage:
200V
Configuration:
-
Current - Continuous Drain(Id):
130A
Operating Temperature -:
-55℃~+150℃
RDS(on):
12mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
1 N-channel
Output Capacitance(Coss):
420pF
Pd - Power Dissipation:
357W
Input Capacitance(Ciss):
4.1nF
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
MS130N20JDT0
Package:
TO-220
Product Description
Product Overview
The MS130N20JDC0/T0 H1.01 Maspower is a high-efficiency N-channel MOSFET designed for power switching applications. It features low gate charge, low Crss, and fast switching speeds, making it suitable for high efficiency switch mode power supplies, electronic lamp ballasts based on half bridge, and UPS systems. The device is 100% avalanche tested and offers improved dv/dt capability, ensuring robust performance in demanding environments. It is also RoHS Compliant.
Product Attributes
- Brand: Maspower
- Model: MS130N20JDC0/T0 H1.01
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | TO-247 (MS130N20JDC0) | TO-220 (MS130N20JDT0) | Unit | Conditions |
| Drain-Source Voltage | VDSS | 200 | V | ||
| Drain Current - continuous | ID | 130 (T=25) / 65 (T=100) | A | ||
| Drain Current - pulse | IDM | 260 | A | (note 1) | |
| Gate-Source Voltage | VGSS | 30 | V | ||
| Single Pulsed Avalanche Energy | EAS | 720 | mJ | (note 2) | |
| Avalanche Current | IAR | 100 | A | (note 1) | |
| Repetitive Avalanche Current | EAR | 35.7 | mJ | (note 1) | |
| Peak Diode Recovery dv/dt | dv/dt | 5.4 | V/ns | (note 3) | |
| Power Dissipation | PD | 357 | W | TC=25 | |
| Operating and Storage Temperature Range | Tj,TSTG | -55~+150 | |||
| Maximum Lead Temperature for Soldering Purposes | TL | 300 | |||
| Breakdown Voltage Temperature Coefficient | BVDSS /TJ | 0.16 | V/ | ID=250A, referenced to 25 | |
| Drain cut-off current | IDSS | 1 (Tj=25) / 10 (Tj=125) | A | VDS=200V,VGS=0V | |
| Gate-body leakage current,forward | IGSSF | 100 | nA | VDS=0V,VGS=30V | |
| Gate-body leakage current,reverse | IGSSR | -100 | nA | VDS=0V,VGS=-30V | |
| Gate Threshold Voltage | VGS(th) | 2.0 - 4.0 | V | VDS=VGS,ID=250uA | |
| Static Drain-Source On-Resistance | RDS(ON) | 8.3 - 12 | m | VGS=10V,ID=50A (note 3) | |
| Forward Transconductance | gfs | 66 | S | VDS =40V , ID=130A (note 3) | |
| Input capacitance | Ciss | 4100 | pF | VDS=100V, VGS=0V, f=1.0MHZ | |
| Output capacitance | Coss | 420 | pF | ||
| Reverse transfer capacitance | Crss | 10 | pF | ||
| Turn-On delay time | td(on) | 56 - 112 | ns | VDD=160V,ID=130A, RG=25 VGS=10V(note 4,5) | |
| Turn-On rise time | tr | 408 - 500 | ns | ||
| Turn-Off delay time | Td(off) | 270 - 550 | ns | ||
| Turn-Off Fall time | tf | 240 - 490 | ns | ||
| Total Gate Charge | Qg | 60 | nC | VDS=160V, ID=130A, VGS=10V(note4,5) | |
| Gate-Source charge | Qgs | 16 | nC | ||
| Gate-Drain charge | Qg d | 20 | nC | ||
| Drain-Source Diode Forward Voltage | VSD | 0.73 - 1.2 | V | VGS=0V,IS=10A (note 3) | |
| Maximum Continuous Drain-Source Diode Forward Current | IS | 130 | A | ||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 260 | A | ||
| Reverse recovery time | trr | 175 | ns | VGS=0V,IF=130A dIF/dt=100A/us(note 3) | |
| Reverse recovery charge | Qrr | 1.23 | uC | ||
| Thermal Resistance, Junction-to-Case | RJC | 0.35 | /W | ||
| Thermal Resistance, Junction-to-Ambient | RJA | 60 | /W | ||
2408021404_MASPOWER-MS130N20JDT0_C37635851.pdf
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