Low Threshold Voltage N Channel Power MOSFET LRC LBSS139DW1T1G with ESD Protection and RoHS Compliance
Product Overview
The LBSS139DW1T1G and S-LBSS139DW1T1G are N-Channel Power MOSFETs designed for general-purpose applications. The S-prefix variants are specifically tailored for automotive and other applications requiring unique site and control change requirements, being AEC-Q101 qualified and PPAP capable. These devices feature a low threshold voltage (VGS(th): 0.5V to 1.5V), making them ideal for low-voltage applications. They also offer ESD protection up to 1500V. Compliance with RoHS requirements and Halogen Free is declared for the material.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS requirements and Halogen Free
- Automotive Qualification: AEC-Q101 qualified and PPAP capable (for S-prefix models)
- Package Type: SC-88 (SOT-363)
- Channel Type: N-Channel
Technical Specifications
| Model | Device Marking | Shipping | Drain-Source Voltage (VDS) | Gate-Source Voltage (VGS) | Continuous Drain Current (ID) | Pulsed Drain Current (IDM) | Continuous Drain Current (ID) @ TA = 25C | Total Device Dissipation (PD) @ TA = 25C | Derate above 25C | Thermal Resistance, Junction-to-Ambient (RJA) | Junction and Storage Temperature (TJ, Tstg) | Maximum Lead Temperature for Soldering |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| LBSS139DW1T1G | J2 | 3000/Tape&Reel | 50 Vdc | 20 Vdc | 200 mAdc | 800 mAdc | 200 mAdc | 380 mW | 3.05 mW/C | 328 C/W | -55 to +150 C | 260 C (10 seconds) |
| S-LBSS139DW1T1G | J2 | 3000/Tape&Reel | 50 Vdc | 20 Vdc | 200 mAdc | 800 mAdc | 200 mAdc | 380 mW | 3.05 mW/C | 328 C/W | -55 to +150 C | 260 C (10 seconds) |
| LBSS139DW1T3G | J2 | 10000/Tape&Reel | 50 Vdc | 20 Vdc | 200 mAdc | 800 mAdc | 200 mAdc | 380 mW | 3.05 mW/C | 328 C/W | -55 to +150 C | 260 C (10 seconds) |
| Electrical Characteristics (Ta = 25C unless otherwise noted) | ||||||||||||
| Characteristic | Symbol | Min. | Typ. | Max. | Unit | |||||||
| OFF Characteristics | ||||||||||||
| Drain-Source Breakdown Voltage (VGS = 0, ID = 250Adc) | VBRDSS | 50 | - | - | Vdc | |||||||
| Zero Gate Voltage Drain Current (VGS = 0, VDS = 25 Vdc) | IDSS | - | - | 0.1 | Adc | |||||||
| Zero Gate Voltage Drain Current (VGS = 0, VDS = 50 Vdc) | IDSS | - | - | 1.0 | Adc | |||||||
| Gate-Body Leakage Current, Forward (VGS = 20 Vdc) | IGSSF | - | 5.6 | 10 | Adc | |||||||
| Gate-Body Leakage Current, Reverse (VGS = -20 Vdc) | IGSSR | - | - | -10 | Adc | |||||||
| ON Characteristics (Note 2) | ||||||||||||
| Gate Threshold Voltage (VDS = VGS, ID = 1.0mAdc) | VGS(th) | 0.5 | - | 1.5 | Vdc | |||||||
| Static Drain-Source On-State Resistance (VGS = 2.75 Vdc, ID < 200 mAdc) | RDS(on) | - | - | 3.5 | Ohms | |||||||
| Static Drain-Source On-State Resistance (VGS = 5.0 Vdc, ID = 200 mAdc) | RDS(on) | - | - | 0.5 | Ohms | |||||||
| Forward Transconductance (VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz) | gfs | - | 100 | - | mS | |||||||
| DYNAMIC CHARACTERISTICS | ||||||||||||
| Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) | Ciss | - | 22.8 | - | pF | |||||||
| Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) | Coss | - | 2.9 | - | pF | |||||||
| Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) | Crss | - | 3.5 | - | pF | |||||||
| SWITCHING CHARACTERISTICS (VDD = 30 Vdc, VGEN = 10 V, RG = 25, RL = 60 , ID = 500 mAdc) | ||||||||||||
| Turn-On Delay Time | td(on) | - | 3.8 | - | ns | |||||||
| Turn-Off Delay Time | td(off) | - | 19 | - | ns | |||||||
Note 1: FR-4 = 1.0x0.75x0.062 in.
Note 2: Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
Operating Temperature Range: TA = 40C to +85C
1912111437_LRC-LBSS139DW1T1G_C383202.pdf
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.