Low Threshold Voltage N Channel Power MOSFET LRC LBSS139DW1T1G with ESD Protection and RoHS Compliance

Key Attributes
Model Number: LBSS139DW1T1G
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
200mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.5Ω@5.0Vdc
Gate Threshold Voltage (Vgs(th)):
1.5V@1.0mA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2.9pF
Number:
1 N-channel
Output Capacitance(Coss):
3.5pF
Input Capacitance(Ciss):
22.8pF
Pd - Power Dissipation:
380mW
Mfr. Part #:
LBSS139DW1T1G
Package:
SC-88
Product Description

Product Overview

The LBSS139DW1T1G and S-LBSS139DW1T1G are N-Channel Power MOSFETs designed for general-purpose applications. The S-prefix variants are specifically tailored for automotive and other applications requiring unique site and control change requirements, being AEC-Q101 qualified and PPAP capable. These devices feature a low threshold voltage (VGS(th): 0.5V to 1.5V), making them ideal for low-voltage applications. They also offer ESD protection up to 1500V. Compliance with RoHS requirements and Halogen Free is declared for the material.

Product Attributes

  • Brand: Leshan Radio Company, LTD.
  • Material Compliance: RoHS requirements and Halogen Free
  • Automotive Qualification: AEC-Q101 qualified and PPAP capable (for S-prefix models)
  • Package Type: SC-88 (SOT-363)
  • Channel Type: N-Channel

Technical Specifications

Model Device Marking Shipping Drain-Source Voltage (VDS) Gate-Source Voltage (VGS) Continuous Drain Current (ID) Pulsed Drain Current (IDM) Continuous Drain Current (ID) @ TA = 25C Total Device Dissipation (PD) @ TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient (RJA) Junction and Storage Temperature (TJ, Tstg) Maximum Lead Temperature for Soldering
LBSS139DW1T1G J2 3000/Tape&Reel 50 Vdc 20 Vdc 200 mAdc 800 mAdc 200 mAdc 380 mW 3.05 mW/C 328 C/W -55 to +150 C 260 C (10 seconds)
S-LBSS139DW1T1G J2 3000/Tape&Reel 50 Vdc 20 Vdc 200 mAdc 800 mAdc 200 mAdc 380 mW 3.05 mW/C 328 C/W -55 to +150 C 260 C (10 seconds)
LBSS139DW1T3G J2 10000/Tape&Reel 50 Vdc 20 Vdc 200 mAdc 800 mAdc 200 mAdc 380 mW 3.05 mW/C 328 C/W -55 to +150 C 260 C (10 seconds)
Electrical Characteristics (Ta = 25C unless otherwise noted)
Characteristic Symbol Min. Typ. Max. Unit
OFF Characteristics
Drain-Source Breakdown Voltage (VGS = 0, ID = 250Adc) VBRDSS 50 - - Vdc
Zero Gate Voltage Drain Current (VGS = 0, VDS = 25 Vdc) IDSS - - 0.1 Adc
Zero Gate Voltage Drain Current (VGS = 0, VDS = 50 Vdc) IDSS - - 1.0 Adc
Gate-Body Leakage Current, Forward (VGS = 20 Vdc) IGSSF - 5.6 10 Adc
Gate-Body Leakage Current, Reverse (VGS = -20 Vdc) IGSSR - - -10 Adc
ON Characteristics (Note 2)
Gate Threshold Voltage (VDS = VGS, ID = 1.0mAdc) VGS(th) 0.5 - 1.5 Vdc
Static Drain-Source On-State Resistance (VGS = 2.75 Vdc, ID < 200 mAdc) RDS(on) - - 3.5 Ohms
Static Drain-Source On-State Resistance (VGS = 5.0 Vdc, ID = 200 mAdc) RDS(on) - - 0.5 Ohms
Forward Transconductance (VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz) gfs - 100 - mS
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Ciss - 22.8 - pF
Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Coss - 2.9 - pF
Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Crss - 3.5 - pF
SWITCHING CHARACTERISTICS (VDD = 30 Vdc, VGEN = 10 V, RG = 25, RL = 60 , ID = 500 mAdc)
Turn-On Delay Time td(on) - 3.8 - ns
Turn-Off Delay Time td(off) - 19 - ns

Note 1: FR-4 = 1.0x0.75x0.062 in.

Note 2: Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.

Operating Temperature Range: TA = 40C to +85C


1912111437_LRC-LBSS139DW1T1G_C383202.pdf

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