650V 50A IGBT Luxin-semi YGW50N65F1A Featuring Trench Stop Technology for Rugged and Power Conversion
Key Attributes
Model Number:
YGW50N65F1A
Product Custom Attributes
Pd - Power Dissipation:
312W
Td(off):
180ns
Td(on):
40ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
75pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4V@250uA
Gate Charge(Qg):
180nC@15V
Operating Temperature:
-40℃~+175℃
Reverse Recovery Time(trr):
90ns
Switching Energy(Eoff):
1.1mJ
Turn-On Energy (Eon):
1.9mJ
Input Capacitance(Cies):
2.8nF
Output Capacitance(Coes):
130pF
Mfr. Part #:
YGW50N65F1A
Package:
TO-247
Product Description
Product Overview
The YGW50N65F1A is a 650V / 50A Trench Field Stop IGBT designed for high-reliability applications. It features Trench-Stop Technology for high-speed switching, enhanced ruggedness, and a short circuit withstand time of 5s. The device offers a low VCEsat and easy parallel switching capability due to its positive temperature coefficient. It is suitable for use in Uninterruptible Power Supplies, Inverters, Welding Converters, PFC applications, and converters with high switching frequencies.
Product Attributes
- Brand: LU-Semi
- Product Package: TO247
- Packaging: Tube
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Maximum Ratings | ||||
| Collector-Emitter Breakdown Voltage | VCE | 650 | V | Tj= 25 unless otherwise specified |
| DC collector current, limited by Tjmax | IC | 100 / 50 | A | TC = 25C / TC = 100C |
| Diode Forward current, limited by Tjmax | IF | 80 / 40 | A | TC = 25C / TC = 100C |
| Continuous Gate-emitter voltage | VGE | 20 | V | |
| Transient Gate-emitter voltage | VGE | 30 | V | |
| Turn off safe operating area | - 150 | A | VCE 650V, Tj 175C, tp = 1s | |
| Pulse collector current, VGE =15V, tp limited by Tjmax | ICM | 150 | A | |
| Short Circuit Withstand Time, VGE= 15V, VCE 400V | TSC | 5 | s | |
| Power dissipation , Tj=25C | Ptot | 312 | W | |
| Operating junction temperature | Tj | -40...+175 | C | |
| Storage temperature | TS | -55...+175 | C | |
| Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s | - 260 | C | ||
| Mounting torque, M3 screw | M | 0.6 | Nm | Maximum of mounting processes: 3 |
| Thermal Resistance | ||||
| IGBT thermal resistance, junction - case | R(j-c) | 0.48 | K/W | |
| Diode thermal resistance, junction - case | R(j-c) | 1.1 | K/W | |
| Thermal resistance, junction - ambient | R(j-a) | 40 | K/W | |
| Electrical Characteristics | ||||
| Static Collector-Emitter Breakdown Voltage | BVCES | 650 | V | VGE=0V , IC=250uA / IC=1mA |
| Gate Threshold Voltage | VGE(th) | 4.0 / 5.0 / 6.0 | V | VGE=VCE, IC=250uA |
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.80 / 2.30 | V | VGE=15V, IC=50A, Tj = 25C / Tj = 175C |
| Zero gate voltage collector current | ICES | 0.1 / 4000 | A | VCE = 650V, VGE = 0V, Tj = 25C / Tj = 175C |
| Gate-emitter leakage current | IGES | - 100 | nA | VCE = 0V, VGE = 20V |
| Transconductance | gfs | 30 | S | VCE = 20V, IC = 50A |
| Dynamic Characteristics | ||||
| Input capacitance | Cies | 2800 | pF | VCE = 30V, VGE = 0V, f = 1MHz |
| Output capacitance | Coes | 130 | pF | |
| Reverse transfer capacitance | Cres | 75 | pF | |
| Gate charge | QG | 180 | nC | VCC = 520V, IC = 50A, VGE = 15V |
| Short circuit collector current | ICSC | 310 | A | VGE=15V,tSC5us, VCC=400V, Tjstart=25C |
| Switching Characteristic, Inductive Load | ||||
| Turn-on Delay Time | td(on) | 40 | ns | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12, Tj=25C |
| Rise Time | tr | 22 | ns | |
| Turn-off Delay Time | td(off) | 180 | ns | |
| Fall Time | tf | 88 | ns | |
| Turn-on Energy | Eon | 1.9 | mJ | |
| Turn-off Energy | Eoff | 1.1 | mJ | |
| Electrical Characteristics of the DIODE | ||||
| Diode Forward Voltage | VFM | 2.3 | V | IF = 40A |
| Reverse Recovery Time | Trr | 90 | ns | IF= 40A, VR = 300V, di/dt= 600A/s |
| Reverse Recovery Current | Irr | 17 | A | |
| Reverse Recovery Charge | Qrr | 900 | nC | |
2410121257_luxin-semi-YGW50N65F1A_C4153737.pdf
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