NChannel MOSFET LRC LNA2306LT1G 30V 5.8A Continuous Drain Current RoHS Compliant Halogen Free Device
Key Attributes
Model Number:
LNA2306LT1G
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
62mΩ@2.5V,4A
Gate Threshold Voltage (Vgs(th)):
1.4V
Reverse Transfer Capacitance (Crss@Vds):
42pF
Number:
1 N-channel
Input Capacitance(Ciss):
496pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
-
Mfr. Part #:
LNA2306LT1G
Package:
SOT-23E
Product Description
Product Overview
The LNA2306LT1G and S-LNA2306LT1G are 30V N-Channel Enhancement-Mode MOSFETs designed with advanced trench process technology and a high-density cell design for ultra-low on-resistance. These MOSFETs are suitable for automotive and other applications requiring unique site and control change requirements, with the S-prefix variant being AEC-Q101 qualified and PPAP capable. They are RoHS compliant and Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS requirements and Halogen Free.
- Automotive Qualification (S-prefix): AEC-Q101 qualified and PPAP capable.
Technical Specifications
| Parameter | Symbol | LNA2306LT1G / S-LNA2306LT1G | Unit |
|---|---|---|---|
| General Characteristics | |||
| DrainSource Voltage | VDSS | 30 | V |
| Continuous Drain Current | ID | 5.8 | A |
| Pulsed Drain Current | IDM | 30 | A |
| GatetoSource Voltage Continuous | VGS | 12 | V |
| Maximum Power Dissipation | PD | 1.4 | W |
| Thermal Resistance, JunctiontoAmbient (Note 2) | RJA | 140 | C/W |
| Junction and Storage temperature | TJ,Tstg | -55+150 | C |
| Electrical Characteristics (Ta= 25C) | |||
| DrainSource Breakdown Voltage (VGS = 0, ID = 250A) | V(BR)DSS | 30 | V |
| Zero Gate Voltage Drain Current (VDS=24V, VGS=0V) | IDSS | 1 | A |
| GateBody Leakage Current, Forward (VDS = 0 V, VGS = 8 V) | IGSSF | 100 | nA |
| GateBody Leakage Current, Reverse (VDS = 0 V, VGS = -8 V) | IGSSR | -100 | nA |
| Gate Threshold Voltage (VDS = VGS, ID = 250A) | VGS(th) | 1.4 | V |
| Static DrainSource OnState Resistance (VGS = 10 V, ID =5.8 A) | RDS(on) | 38 | m |
| Static DrainSource OnState Resistance (VGS = 4.5 V, ID =5.0 A) | RDS(on) | 43 | m |
| Static DrainSource OnState Resistance (VGS = 2.5 V, ID =4.0 A) | RDS(on) | 62 | m |
| Forward Transconductance (VDS = 5.0 V, ID = 5 A) | gfs | 10 | S |
| Input Capacitance (VGS = 0 V, f = 1.0MHz,VDS= 15 V) | Ciss | 496 | pF |
| Output Capacitance (VGS = 0 V, f = 1.0MHz,VDS= 15 V) | Coss | 50 | pF |
| Reverse Transfer Capacitance (VGS = 0 V, f = 1.0MHz,VDS= 15 V) | Crss | 31 | pF |
| Turn-On Delay Time | td(on) | 72 | ns |
| Rise Time | tr | 28 | ns |
| Turn-Off Delay Time | td(off) | 45 | ns |
| Fall Time | tf | 34 | ns |
| Source-Drain Diode Forward Voltage (VGS = 0 V, IF = 1 A) | VSD | 1.2 | V |
| Device Marking and Ordering Information | |||
| Model | Marking | Shipping | Unit |
| LNA2306LT1G | A06 | 3000/Tape&Reel | - |
| S-LNA2306LT1G | A06 | 3000/Tape&Reel | - |
| LNA2306LT3G | A06 | 10000/Tape&Reel | - |
| Package Outline and Dimensions (SOT23E) | |||
| Dimension | Min | Nor | Max |
| A | 0.90 | 1.00 | 1.10 |
| A1 | 0.01 | 0.06 | 0.10 |
| b | 0.30 | 0.40 | 0.50 |
| c | 0.10 | 0.15 | 0.20 |
| D | 2.80 | 2.90 | 3.00 |
| E | 1.20 | 1.30 | 1.40 |
| e | 1.80 | 1.90 | 2.00 |
| L | 0.20 | 0.40 | 0.60 |
| L1 | 0.45 | 0.55 | 0.65 |
| HE | 2.20 | 2.40 | 2.60 |
| 0 | 10 | ||
2410010133_LRC-LNA2306LT1G_C525405.pdf
Related Products
Planar die Zener diode XZT BZT52C7V5 designed for medium current applications and automated assembly
Product OverviewThe BZT52C2V4 thru BZT52C43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free version.Product ...
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor
Product OverviewThe YJD90N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC converters, power management functions, and ...
YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages
Product OverviewThe DTC144EUAQ is an NPN Digital Transistor with built-in resistors, designed to simplify circuit design by eliminating the need for external input resistors. It is ideal for configuring inverter circuits and offers easy setup for on/off conditions, reducing component count and board ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
