P Channel MOSFET LRC LP9435LT1G with Advanced Trench Process Technology and 30V Drain Source Voltage
Key Attributes
Model Number:
LP9435LT1G
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.3A
RDS(on):
100mΩ@4.5V
Operating Temperature -:
-55℃~+150℃@(Tj)
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
51pF
Number:
1 P-Channel
Output Capacitance(Coss):
65pF
Input Capacitance(Ciss):
644pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
10nC@10V
Mfr. Part #:
LP9435LT1G
Package:
SOT-23
Product Description
Product Overview
This P-Channel Enhancement-Mode MOSFET, available in LP9435LT1G and S-LP9435LT1G models, is designed with advanced trench process technology and a high-density cell design for ultra-low on-resistance. It offers a Drain-Source Voltage of 30V and is RoHS compliant and Halogen Free. The S- prefix variant is AEC-Q101 qualified and PPAP capable, suitable for automotive and other applications with unique site and control change requirements. It is ideal for applications requiring efficient power management.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS requirements and Halogen Free
- Certifications (S- prefix): AEC-Q101 qualified and PPAP capable
- Technology: Advanced trench process technology, High density cell design
- Package Type: SOT23 (TO-236)
Technical Specifications
| Parameter | Symbol | Model | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| DrainSource Voltage | VDSS | LP9435LT1G, S-LP9435LT1G | -30 | V | ||
| Drain Current - Continuous | ID | LP9435LT1G, S-LP9435LT1G | -5.3 | A | ||
| Drain Current - Pulsed | IDM | LP9435LT1G, S-LP9435LT1G | -20 | A | ||
| GatetoSource Voltage - Continuous | VGS | LP9435LT1G, S-LP9435LT1G | -20 | +20 | V | |
| Power Dissipation | PD | LP9435LT1G, S-LP9435LT1G | 1.4 | W | ||
| Thermal Resistance, JunctiontoAmbient | RJA | LP9435LT1G, S-LP9435LT1G | 100 | C/W | ||
| Junction and Storage temperature | TJ, Tstg | LP9435LT1G, S-LP9435LT1G | -55 | +150 | C | |
| DrainSource Breakdown Voltage | VBRDSS | LP9435LT1G, S-LP9435LT1G | -30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | LP9435LT1G, S-LP9435LT1G | -1 | -50 | A | |
| GateBody Leakage Current, Forward | IGSSF | LP9435LT1G, S-LP9435LT1G | 100 | nA | ||
| GateBody Leakage Current, Reverse | IGSSR | LP9435LT1G, S-LP9435LT1G | -100 | nA | ||
| Gate Threshold Voltage | VGS(th) | LP9435LT1G, S-LP9435LT1G | -1.3 | -1.7 | -3 | V |
| Static DrainSource OnState Resistance (VGS = -10V, ID = -5.3A) | RDS(on) | LP9435LT1G, S-LP9435LT1G | 51 | 70 | m | |
| Static DrainSource OnState Resistance (VGS = -4.5V, ID = -4.2A) | RDS(on) | LP9435LT1G, S-LP9435LT1G | 64 | 100 | m | |
| Input Capacitance | Ciss | LP9435LT1G, S-LP9435LT1G | 65 | pF | ||
| Output Capacitance | Coss | LP9435LT1G, S-LP9435LT1G | 100 | pF | ||
| Reverse Transfer Capacitance | Crss | LP9435LT1G, S-LP9435LT1G | 10 | pF | ||
| Turn-On Delay Time | td(on) | LP9435LT1G, S-LP9435LT1G | 3.6 | ns | ||
| Rise Time | tr | LP9435LT1G, S-LP9435LT1G | 6.3 | ns | ||
| Turn-Off Delay Time | td(off) | LP9435LT1G, S-LP9435LT1G | 1.7 | ns | ||
| Fall Time | tf | LP9435LT1G, S-LP9435LT1G | 1.3 | ns | ||
| Forward Voltage | VSD | LP9435LT1G, S-LP9435LT1G | -1 | -1.4 | V | |
| Total Gate Charge | Qg | LP9435LT1G, S-LP9435LT1G | 10 | nC | ||
| Gate-Source Charge | Qgs | LP9435LT1G, S-LP9435LT1G | 1.6 | nC | ||
| Gate-Drain Charge | Qgd | LP9435LT1G, S-LP9435LT1G | 1.8 | nC | ||
| Marking | LP9435LT1G | P94 | ||||
| Marking | S-LP9435LT1G | P94 | ||||
| Shipping | LP9435LT1G | 3000/Tape&Reel | ||||
| Shipping | LP9435LT3G | 10000/Tape&Reel |
2410010130_LRC-LP9435LT1G_C383257.pdf
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