Low Resistance N Channel Transistor MATSUKI ME7170-G Suitable for Notebook Computer Power Management
Key Attributes
Model Number:
ME7170-G
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
110A
Operating Temperature -:
-55℃~+150℃
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
445pF
Number:
1 N-channel
Input Capacitance(Ciss):
5.024nF
Pd - Power Dissipation:
56W
Gate Charge(Qg):
102nC@10V
Mfr. Part #:
ME7170-G
Package:
DFN-8-EP(6.1x5.2)
Product Description
Product Overview
The ME7170-G is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making it ideal for low-voltage applications such as notebook computer power management and other battery-powered circuits requiring low-side switching and low in-line power loss in a compact surface-mount package. Its super high density cell design offers extremely low RDS(ON) and exceptional DC current capability.
Product Attributes
- Brand: Matsuki Electric/Force Mos
- Origin: Not Specified
- Material: Not Specified
- Color: Not Specified
- Certifications: Green product-Halogen free
Technical Specifications
| Parameter | Symbol | Limit | Min | Typ | Max | Unit | Notes | |
| Maximum Ratings | VDS | Drain-Source Voltage | 30 | V | ||||
| VGS | Gate-Source Voltage | 20 | V | |||||
| ID | Continuous Drain Current | TA=25 | 110 | A | * | |||
| TA=70 | 90 | A | ||||||
| IDM | Pulsed Drain Current | 450 | A | |||||
| PD | Maximum Power Dissipation | TA=25 | 56 | W | * | |||
| TA=70 | 36 | W | ||||||
| TJ, Tstg | Junction and Storage Temperature Range | -55 | 150 | |||||
| RJC | Thermal Resistance-Junction to Case | 2.2 | /W | * | ||||
| STATIC | V(BR)DSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250A | 30 | V | |||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID=250A | 1 | 2.2 | V | |||
| IGSS | Gate Leakage Current | VDS=0V, VGS=20V | 100 | nA | ||||
| IDSS | Zero Gate Voltage Drain Current | VDS=30V, VGS=0V | 1 | A | ||||
| RDS(ON) | Drain-Source On-State Resistance | VGS=10V, ID=25A | 2.1 | 2.6 | m | a | ||
| VGS=4.5V, ID=19A | 3 | 3.9 | m | a | ||||
| VSD | Diode Forward Voltage | IS=25A, VGS=0V | 0.8 | 1.2 | V | |||
| DYNAMIC | Qg | Total Gate Charge | VDS=15V, VGS=10V, ID=20A | 102 | nC | |||
| Total Gate Charge | VDS=15V, VGS=4.5V, ID=20A | 49 | nC | |||||
| Qgs | Gate-Source Charge | 16 | nC | |||||
| Qgd | Gate-Drain Charge | 22 | nC | |||||
| Ciss | Input Capacitance | VDS=15V, VGS=0V,F=1MHz | 5024 | pF | ||||
| Coss | Output Capacitance | 514 | pF | |||||
| Crss | Reverse Transfer Capacitance | 445 | pF | |||||
| Switching Characteristics | td(on) | Turn-On Delay Time | VDS=15V, RL =15 VGS=10V,RG=6 ID=1A | 33 | ns | |||
| tr | Turn-On Rise Time | 21 | ns | |||||
| td(off) | Turn-Off Delay Time | 140 | ns | |||||
| tf | Turn-Off Fall Time | 31 | ns |
*The device mounted on 1in FR4 board with 2 oz copper.
a. Pulse test: pulse width300s, duty cycle2.
2410121505_MATSUKI-ME7170-G_C709757.pdf
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