MATSUKI MEE7816S G N Channel MOSFET Featuring Force MOS ETG Technology for Medium Voltage Power Circuits
Key Attributes
Model Number:
MEE7816S-G
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
10.2A
RDS(on):
100mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
15pF
Number:
1 N-channel
Output Capacitance(Coss):
119pF
Input Capacitance(Ciss):
314pF
Pd - Power Dissipation:
16.7W
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
MEE7816S-G
Package:
DFN-8(3x3)
Product Description
Product Overview
The MEE7816S is an N-Channel enhancement mode power field-effect transistor featuring Force-MOS patented Extended Trench Gate (ETG) technology. This advanced design minimizes on-state resistance and gate charge while enhancing avalanche capability. It is ideal for medium voltage applications such as chargers, adapters, notebook computer power management, and lighting dimming circuits, offering low in-line power loss in a compact surface mount package.
Product Attributes
- Brand: MEE (implied by product name)
- Product Type: N-Channel MOSFET
- Technology: Force-MOS Extended Trench Gate (ETG)
- Certifications: Green product-Halogen free
- Package: DFN(S) 3X3
Technical Specifications
| Parameter | Symbol | Limit | Unit | Notes |
| Drain-Source Voltage | VDS | 100 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current (TC=25) | ID | 10.2 | A | |
| Continuous Drain Current (TC=70) | ID | 8.2 | A | |
| Pulsed Drain Current | IDM | 41 | A | |
| Maximum Power Dissipation (TC=25) | PD | 16.7 | W | |
| Maximum Power Dissipation (TC=70) | PD | 10.7 | W | |
| Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | ||
| Thermal Resistance-Junction to Case | RJC | 7.5 | /W | * The device mounted on 1in2 FR4 board with 2 oz copper |
| Drain-Source Breakdown Voltage (VGS=0V, ID=250A) | BVDSS | 100 | V | |
| Gate Threshold Voltage (VDS=VGS, ID=250A) | VGS(th) | 1 - 3 | V | |
| Gate Leakage Current (VDS=0V, VGS=±20V) | IGSS | ±100 | nA | |
| Zero Gate Voltage Drain Current (VDS=100V, VGS=0V) | IDSS | 1 | μA | |
| Drain-Source On-Resistance (VGS=10V, ID=8A) | RDS(ON) | 85 - 100 | mΩ | a. Pulse test: pulse width≤ 300us, duty cycle≤ 2% |
| Diode Forward Voltage (IS=8A, VGS=0V) | VSD | 0.9 - 1.2 | V | |
| Total Gate Charge (VDS=50V, VGS=10V, ID=8A) | Qg | 15.5 | nC | |
| Gate-Source Charge | Qgs | 2.6 | nC | |
| Gate-Drain Charge | Qgd | 3.6 | nC | |
| Input Capacitance (VDS=15V, VGS=0V,f=1MHz) | Ciss | 314 | pF | |
| Output Capacitance | Coss | 119 | pF | |
| Reverse Transfer Capacitance | Crss | 15 | pF | |
| Turn-On Delay Time (VDS=50V, RL=50Ω, VGS=10V, RG=1Ω, ID=1A) | td(on) | 8.4 | ns | |
| Turn-On Rise Time | tr | 24.8 | ns | |
| Turn-Off Delay Time | td(off) | 30.7 | ns | |
| Turn-Off Fall Time | tf | 2.5 | ns | |
| Reverse Recovery Time (ID=7A,VGS=0V,di/dt=100A/us) | Trr | 25 | ns | |
| Reverse Recovery Charge | Qrr | 24 | nC |
2410121505_MATSUKI-MEE7816S-G_C3647158.pdf
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