High Cell Density N Channel MOSFET MATSUKI ME2302 Optimized for Loss in Mobile and Notebook Devices
Key Attributes
Model Number:
ME2302
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.8A
Operating Temperature -:
-
RDS(on):
130mΩ@1.8V,2.2A
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
20pF
Number:
1 N-channel
Input Capacitance(Ciss):
350pF
Output Capacitance(Coss):
90pF
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
6nC@4.5V
Mfr. Part #:
ME2302
Package:
SOT-23
Product Description
Product Overview
The ME2302 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This technology is optimized to minimize on-state resistance, making the device ideal for low-voltage applications such as power management in cellular phones, notebook computers, and other battery-powered circuits. Its low in-line power loss is particularly beneficial for very small outline surface mount packages.
Product Attributes
- Brand: ME2302
- Type: N-Channel Enhancement Mode MOSFET
- Material: Pb-free
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | 5 sec Steady State | TA=25 | TA=70 | Unit |
| Drain-Source Voltage | VDSS | 20 | V | ||
| Gate-Source Voltage | VGSS | 8 | V | ||
| Continuous Drain Current(tJ=150) | ID | 2.8 | 2.2 | A | |
| Pulsed Drain Current | IDM | 10 | A | ||
| Maximum Body-Diode Continuous Current | IS | 1.6 | A | ||
| Maximum Power Dissipation | PD | 1.25 | 0.8 | W | |
| Operating Junction Temperature | TJ | 150 | |||
| Thermal Resistance-Junction to Ambient | RthJA | 77 | 105 | /W | |
| Thermal Resistance-Junction to Case | RJC | 70 | /W |
| Symbol | Parameter | Min | Typ | Max | Unit |
| V(BR)DSS | Drain-Source Breakdown Voltage | 20 | V | ||
| VGS(th) | Gate Threshold Voltage | 0.6 | 0.9 | 1.2 | V |
| IGSS | Gate-Body Leakage Current | 100 | nA | ||
| IDSS | Zero Gate Voltage Drain Current | 1 | A | ||
| ID(ON) | On-State Drain Current | A | |||
| RDS(ON) | Drain-Source On-Resistance | m | |||
| VSD | Diode Forward Voltage | 0.75 | 1.2 | V | |
| Qg | Total Gate Charge | 9 | nC | ||
| Qgs | Gate-Source Charge | 2.2 | |||
| Qgd | Gate-Drain Charge | 3 | |||
| Ciss | Input Capacitance | 350 | pF | ||
| Coss | Output Capacitance | 90 | |||
| Crss | Reverse Transfer Capacitance | 20 | |||
| td(on) | Turn-On Delay Time | 9 | ns | ||
| tr | Rise Time | 23 | |||
| td(off) | Turn-Off Delay Time | 38 | |||
| tf | Fall Time |
2410121521_MATSUKI-ME2302_C165218.pdf
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