N Channel MOSFET LRC L2SK801LT1G Featuring Switching and Low On Resistance in Pb Free SOT 23 Package
Key Attributes
Model Number:
L2SK801LT1G
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
310mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.5Ω@10V,500mA
Gate Threshold Voltage (Vgs(th)):
1.8V
Reverse Transfer Capacitance (Crss@Vds):
5pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
50pF@25V
Pd - Power Dissipation:
225mW
Mfr. Part #:
L2SK801LT1G
Package:
SOT-23
Product Description
Product Overview
The LESHAN RADIO COMPANY, LTD. L2SK801LT1G is a Small Signal N-Channel MOSFET designed for various electronic applications. This device features a SOT-23 (TO-236AB) package, offering a 310 mAmps continuous drain current and 60 Volts drain-source voltage. It is characterized by its low on-state resistance and efficient switching capabilities, making it suitable for general-purpose switching and amplification tasks. Available in Pb-Free packaging.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Package Type: SOT 23 (TO236AB)
- Channel Type: N-Channel
- Lead Free: PbFree Package is Available
Technical Specifications
| Characteristic | Symbol | Value | Unit | Notes | |
|---|---|---|---|---|---|
| Maximum Ratings | |||||
| DrainSource Voltage | VDSS | 60 | Vdc | ||
| DrainGate Voltage | VDGR | 60 | Vdc | RGS = 1.0 M | |
| Drain Current Continuous | ID | 310 | mAdc | TC = 25C | |
| Drain Current Continuous | IDM | 1200 | mAdc | ||
| GateSource Voltage Continuous | VGS | 20 | Vdc | ||
| GateSource Voltage Nonrepetitive | VGSM | 40 | Vpk | tp 50 s | |
| Thermal Characteristics | |||||
| Total Device Dissipation (FR5 Board) | PD | 225 | mW | TA = 25C | |
| Derate above 25C (FR5 Board) | 1.8 | mW/C | |||
| Thermal Resistance, Junction to Ambient (FR5 Board) | RJA | 556 | C/W | ||
| Total Device Dissipation (Alumina Substrate) | PD | 300 | mW | TA = 25C | |
| Derate above 25C (Alumina Substrate) | 2.4 | mW/C | |||
| Thermal Resistance, Junction to Ambient (Alumina Substrate) | RJA | 417 | C/W | ||
| Junction and Storage Temperature | TJ, Tstg | 55 to +150 | C | ||
| Electrical Characteristics (TA = 25C unless otherwise noted) | |||||
| DrainSource Breakdown Voltage | V(BR)DSS | 60 | Vdc | VGS = 0, ID = 10 Adc | |
| Zero Gate Voltage Drain Current | IDSS | 1.0 | Adc | TJ = 125C, VGS = 0, VDS = 60 Vdc | |
| Zero Gate Voltage Drain Current | IDSS | 500 | Adc | TJ = 125C, VGS = 0, VDS = 60 Vdc | |
| GateBody Leakage Current, Forward | IGSSF | 100 | nAdc | VGS = 20 Vdc | |
| GateBody Leakage Current, Reverse | IGSSR | 100 | nAdc | VGS = 20 Vdc | |
| Gate Threshold Voltage | VGS(th) | 1.8 | Vdc | VDS = VGS, ID = 250 Adc | |
| OnState Drain Current | ID(on) | 500 | mA | VDS 2.0 VDS(on), VGS = 10 Vdc | |
| Static DrainSource OnState Voltage | VDS(on) | 0.375 | Vdc | VGS = 5.0 Vdc, ID = 50 mAdc | |
| Static DrainSource OnState Resistance | rDS(on) | 1.5 | Ohms | VGS = 10 V, ID = 500 mAdc | |
| Static DrainSource OnState Resistance | rDS(on) | 1.7 | Ohms | VGS = 5.0 Vdc, ID = 50 mAdc | |
| Forward Transconductance | gFS | 80 | mmhos | VDS 2.0 VDS(on), ID = 200 mAdc | |
| Dynamic Characteristics | |||||
| Input Capacitance | Ciss | 17 | pF | VDS = 25 Vdc, VGS = 0, f = 1.0 MHz | |
| Input Capacitance | Ciss | 50 | pF | VDS = 25 Vdc, VGS = 0, f = 1.0 MHz | |
| Output Capacitance | Coss | 10 | pF | VDS = 25 Vdc, VGS = 0, f = 1.0 MHz | |
| Output Capacitance | Coss | 25 | pF | VDS = 25 Vdc, VGS = 0, f = 1.0 MHz | |
| Reverse Transfer Capacitance | Crss | 2.5 | pF | VDS = 25 Vdc, VGS = 0, f = 1.0 MHz | |
| Reverse Transfer Capacitance | Crss | 5.0 | pF | VDS = 25 Vdc, VGS = 0, f = 1.0 MHz | |
| Switching Characteristics | |||||
| TurnOn Delay Time | td(on) | 7 | ns | V DD = 25 Vdc , ID = 500 mAdc | |
| TurnOn Delay Time | td(on) | 20 | ns | V DD = 25 Vdc , ID = 500 mAdc | |
| TurnOff Delay Time | td(off) | 11 | ns | V RG = 25 , RL = 50 , Vgen = 10 V | |
| TurnOff Delay Time | td(off) | 40 | ns | V RG = 25 , RL = 50 , Vgen = 10 V | |
| Body-Drain Diode Ratings | |||||
| Diode Forward OnVoltage | VSD | 1.5 | Vdc | IS = 115 mAdc, V GS = 0 V | |
| Source Current Continuous (Body Diode) | IS | 115 | mAdc | ||
| Source Current Pulsed (Body Diode) | ISM | 800 | mAdc | ||
| Ordering Information | |||||
| Model | L2SK801LT1G | 3000 Tape & Reel | |||
| Model | L2SK801LT3G | 10000 Tape & Reel | |||
| Device Marking | 801 | ||||
| Month Code | M | ||||
| Dimensions (SOT-23) | |||||
| Dimension | Symbol | Min (inches) | Max (inches) | Min (mm) | Max (mm) |
| A | A | 0.1102 | 0.1197 | 2.80 | 3.04 |
| B | B | 0.0472 | 0.0551 | 1.20 | 1.40 |
| C | C | 0.0350 | 0.0440 | 0.89 | 1.11 |
| D | D | 0.0150 | 0.0200 | 0.37 | 0.50 |
| G | G | 0.0701 | 0.0807 | 1.78 | 2.04 |
| H | H | 0.0005 | 0.0040 | 0.013 | 0.100 |
| J | J | 0.0034 | 0.0070 | 0.085 | 0.177 |
| K | K | 0.0140 | 0.0285 | 0.35 | 0.69 |
| L | L | 0.0350 | 0.0401 | 0.89 | 1.02 |
| S | S | 0.0830 | 0.1039 | 2.10 | 2.64 |
| V | V | 0.0177 | 0.0236 | 0.45 | 0.60 |
1809051319_LRC-L2SK801LT1G_C72956.pdf
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