MDD Microdiode Semiconductor S8550 SOT23 PNP Transistor with -40 Volt Collector Base Voltage Rating
Key Attributes
Model Number:
S8550
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
150MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
S8550
Package:
SOT-23
Product Description
Product Overview
The S8550 is a PNP type transistor encapsulated in a SOT-23 plastic package. It is a complementary part to the S8050, designed for general-purpose applications with a continuous collector current of -0.5A and a collector power dissipation of 0.3W. The device operates within a junction temperature range of 150 and features a transition frequency of 150MHz.
Product Attributes
- Brand: Microdiode (implied by URL)
- Package Type: SOT-23
- Marking: 2TY
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
| VCBO | Collector-Base Voltage | -40 | V | |||
| VCEO | Collector-Emitter Voltage | -25 | V | |||
| VEBO | Emitter-Base Voltage | -5 | V | |||
| IC | Collector Current-Continuous | -0.5 | A | |||
| PC | Collector Power Dissipation | 0.3 | W | |||
| Tj | Junction Temperature | 150 | ||||
| Tstg | Storage Temperature | -55 | +150 | |||
| V(BR)CBO | Collector-base breakdown voltage | IC=-100A, IE=0 | -40 | V | ||
| V(BR)CEO | Collector-emitter breakdown voltage | IC=-1mA,IB=0 | -25 | V | ||
| V(BR)EBO | Emitter-base breakdown voltage | IE=-100A,IC=0 | -5 | V | ||
| ICBO | Collector cut-off current | VCB=-40V, IE=0 | -0.1 | A | ||
| IEBO | Emitter cut-off current | VEB=-3V, IC=0 | -0.1 | A | ||
| hFE(1) | DC current gain | VCE=-1V, IC=-50mA | 120 | 400 | ||
| VCE(sat) | Collector-emitter saturation voltage | IC=-500mA, IB=-50mA | -0.6 | V | ||
| VBE(sat) | Base-emitter saturation voltage | IC=-500mA, IB=-50mA | -1.2 | V | ||
| fT | Transition frequency | VCE=-6V, IC=-20mA f=30MHz | 150 | MHz | ||
| hFE(2) | DC current gain | VCE=-1V, IC=-500mA | 50 | |||
| ICEO | Collector cut-off current | VCB=-20V, IE=0 | -0.1 | A | ||
| RJA | Thermal Resistance From Junction To Ambient | 417 | /W |
2511061030_MDD-Microdiode-Semiconductor-S8550_C364313.pdf
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