power MOSFET MagnaChip Semicon MMF60R580QTH featuring super junction technology and halogen free packaging
Key Attributes
Model Number:
MMF60R580QTH
Product Custom Attributes
Mfr. Part #:
MMF60R580QTH
Package:
TO-220F
Product Description
Product Overview
The MMF60R580Q is a power MOSFET from Magnachip Semiconductor Ltd., utilizing advanced super junction technology. This design enables very low on-resistance and gate charge, leading to high efficiency through optimized charge coupling. It offers designers the advantage of low EMI and reduced switching loss, making it suitable for various demanding applications.
Product Attributes
- Brand: Magnachip Semiconductor Ltd.
- Product Code: MMF60R580Q
- Marking: 60R580Q
- Temperature Range: -55 ~ 150
- Package: TO-220F
- Packing: Tube
- RoHS Status: Halogen Free
- Certifications: Green Package Pb Free Plating, Halogen Free
Technical Specifications
| Parameter | Symbol | Rating | Unit | Note | |
| Absolute Maximum Rating | |||||
| Drain Source voltage | VDSS | 600 | V | ||
| Gate Source voltage | VGSS | 30 | V | ||
| Continuous drain current | ID | 8 | A | TC=25, limited by maximum junction temperature | |
| Continuous drain current | ID | 5 | A | TC=100, limited by maximum junction temperature | |
| Pulsed drain current | IDM | 24 | A | Pulse width tP limited by Tj,max | |
| Power dissipation | PD | 25 | W | ||
| Single - pulse avalanche energy | EAS | 170 | mJ | ||
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns | ||
| Diode dv/dt ruggedness | dv/dt | 15 | V/ns | ISD ID, VDS peak V(BR)DSS | |
| Storage temperature | Tstg | -55 ~150 | |||
| Maximum operating junction temperature | Tj | 150 | |||
| Thermal Characteristics | |||||
| Thermal resistance, junction-case max | Rthjc | 5.1 | /W | ||
| Thermal resistance, junction-ambient max | Rthja | 75 | /W | ||
| Static Characteristics | |||||
| Drain Source Breakdown voltage | V(BR)DSS | 600 | V | VGS = 0V, ID = 250A | |
| Gate Threshold Voltage | VGS(th) | 2 - 4 | V | VDS = VGS, ID = 250A | |
| Zero Gate Voltage Drain Current | IDSS | - | 1 | A | VDS = 600V, VGS = 0V |
| Gate Leakage Current | IGSS | - | 100 | nA | VGS = 30V, VDS = 0V |
| Drain-Source On State Resistance | RDS(ON) | 0.53 - 0.58 | VGS = 10V, ID = 2.5A | ||
| Dynamic Characteristics | |||||
| Input Capacitance | Ciss | - | 478 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz |
| Output Capacitance | Coss | - | 427 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz |
| Reverse Transfer Capacitance | Crss | - | 21 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz |
| Effective Output Capacitance Energy Related | Co(er) | - | 19 | - | VDS = 0V to 480V, VGS = 0V, f = 1.0MHz |
| Turn On Delay Time | td(on) | - | 16 | ns | VGS = 10V, RG = 25, VDS = 300V, ID = 8A |
| Rise Time | tr | - | 33 | ns | VGS = 10V, RG = 25, VDS = 300V, ID = 8A |
| Turn Off Delay Time | td(off) | - | 76 | ns | VGS = 10V, RG = 25, VDS = 300V, ID = 8A |
| Fall Time | tf | - | 33 | ns | VGS = 10V, RG = 25, VDS = 300V, ID = 8A |
| Total Gate Charge | Qg | - | 13 | nC | VGS = 10V, VDS = 480V, ID = 8A |
| Gate Source Charge | Qgs | - | 4 | - | VGS = 10V, VDS = 480V, ID = 8A |
| Gate Drain Charge | Qg d | - | 5 | - | VGS = 10V, VDS = 480V, ID = 8A |
| Gate Resistance | RG | - | 27 | VGS = 0V, f = 1.0MHz | |
| Reverse Diode Characteristics | |||||
| Continuous Diode Forward Current | ISD | - | 8 | A | |
| Diode Forward Voltage | VSD | - | 1.4 | V | ISD = 8A, VGS = 0V |
| Reverse Recovery Time | trr | - | 259 | ns | ISD = 8A di/dt = 100A/s VDD = 100V |
| Reverse Recovery Charge | Qrr | - | 2 | C | ISD = 8A di/dt = 100A/s VDD = 100V |
| Reverse Recovery Current | Irrm | - | 16 | A | ISD = 8A di/dt = 100A/s VDD = 100V |
Applications
- PFC Power Supply Stages
- Switching Applications
- Adapter
- Motor Control
- DC DC Converters
2509121533_MagnaChip-Semicon-MMF60R580QTH_C51891813.pdf
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