High density cell N channel mosfet MATSUKI ME3424D G with compact TSOP 6 package and ESD protection
Key Attributes
Model Number:
ME3424D-G
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5A
RDS(on):
42mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
21pF
Number:
1 N-channel
Output Capacitance(Coss):
68pF
Input Capacitance(Ciss):
370pF
Pd - Power Dissipation:
1.1W
Gate Charge(Qg):
12nC@10V
Mfr. Part #:
ME3424D-G
Package:
TSOP-6
Product Description
Product Overview
The ME3424D is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface-mount package. It features ESD protection and a super high-density cell design for extremely low RDS(ON).
Product Attributes
- Brand: ME (Matsuki Electric/Force mos)
- Product Series: ME3424D/ME3424D-G
- Type: N-Channel MOSFET
- ESD Protected: Yes
- Certifications: Pb-free (ME3424D), Green product-Halogen free (ME3424D-G)
- Package Type: TSOP-6
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit | |
| Absolute Maximum Ratings | Drain-Source Voltage | 30 | V | ||||
| Gate-Source Voltage | ±20 | V | |||||
| Continuous Drain Current | ID | TA=25 | 5 | A | |||
| TA=70 | 4 | A | |||||
| Pulsed Drain Current | IDM | 20 | A | ||||
| Maximum Power Dissipation | PD | TA=25 | 1.1 | W | |||
| TA=70 | 0.7 | W | |||||
| Electrical Characteristics | Drain-Source Breakdown Voltage | VBR(DSS) | VGS=0V, ID=250A | 30 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 1 | 1.5 | 3 | V | |
| Gate Leakage Current | IGSS | VDS=0V, VGS=±16V | ±10 | μA | |||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V, VGS=0V | 1 | μA | |||
| Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=6.7A | 23 | 28 | mΩ | ||
| VGS=4.5V, ID=5.0A | 32 | 42 | mΩ | ||||
| Dynamic Characteristics | Input Capacitance | Ciss | VDS=15V, VGS=0V, f=1MHz | 370 | pF | ||
| Output Capacitance | COSS | VDS=15V, VGS=0V, f=1MHz | 68 | pF | |||
| Reverse Transfer Capacitance | Crss | VDS=15V, VGS=0V, f=1MHz | 21 | pF | |||
| Total Gate Charge | Qg | VDS=15V, VGS=10V, ID=6.7A | 12 | nC | |||
| Qg | VDS=15V, VGS=4.5V, ID=6.7A | 5.7 | nC |
2410121523_MATSUKI-ME3424D-G_C3647151.pdf
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