Power MOSFET LRC LSI1013LT1G P Channel 1.8 Volt TrenchFET with fast switching and low on resistance
Key Attributes
Model Number:
LSI1013LT1G
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
400mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.2Ω@4.5V
Gate Threshold Voltage (Vgs(th)):
1.3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 P-Channel
Input Capacitance(Ciss):
-
Pd - Power Dissipation:
225mW
Gate Charge(Qg):
1.5nC@4.5V
Mfr. Part #:
LSI1013LT1G
Package:
SOT-23
Product Description
Product Overview
The LSI1013LT1G is a P-Channel 1.8-V (G-S) TrenchFET Power MOSFET from LESHAN RADIO COMPANY, LTD. It features Gate-Source ESD protection up to 2000 V, enabling ease in driving switches and low-voltage operation. With low on-resistance (1.2 typical) and a low threshold voltage (0.8 V typical), this MOSFET is ideal for high-speed circuits and low battery voltage applications. Its fast switching speed (14 ns) makes it suitable for various driver applications including relays, solenoids, lamps, hammers, displays, and memory. It is also well-suited for battery-operated systems, power supply converter circuits, and load/power switching in cell phones and pagers. The "S-" prefix indicates AEC-Q101 qualification and PPAP capability for automotive and other demanding applications.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Device Type: P-Channel 1.8-V (G-S) MOSFET
- Technology: TrenchFET Power MOSFET
- ESD Protection: 2000 V (Gate-Source)
- Package: SOT-23
- Certifications: AEC-Q101 Qualified (for "S-" prefix models)
- Manufacturing Process: PPAP Capable (for "S-" prefix models)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -20 | V | |||
| Gate-Source Voltage | VGS | 6 | V | |||
| Continuous Drain Current (TA = 25 C) | ID | -400 | -350 | mA | ||
| Continuous Drain Current (TA = 85 C) | ID | -300 | -275 | mA | ||
| Pulsed Drain Current | IDM | -1000 | mA | |||
| Continuous Source Current (diode conduction) | IS | -275 | -250 | mA | ||
| Maximum Power Dissipation | 225 | mW | ||||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | C | ||
| Gate-Source ESD Rating (HBM, Method 3015) | ESD | 2000 | V | |||
| Static Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250 A | -0.45 | V | ||
| Gate-Body Leakage | IGSS | VDS = 0 V, VGS = 4.5 V | 1 | 2 | A | |
| Zero Gate Voltage Drain Current | IDSS | VDS = 16 V, VGS = 0 V | -0.3 | -100 | nA | |
| Zero Gate Voltage Drain Current (TJ = 85 C) | IDSS | VDS = 16 V, VGS = 0 V | -5 | A | ||
| On-State Drain Current | ID(on) | VDS = 5 V, VGS = 4.5 V | -700 | mA | ||
| Drain-Source On-State Resistance | rDS(on) | VGS = 4.5 V, ID = 350 mA | 0.8 | 1.2 | ||
| Drain-Source On-State Resistance | rDS(on) | VGS = 2.5 V, ID = 300 mA | 1.2 | 1.6 | ||
| Drain-Source On-State Resistance | rDS(on) | VGS = 1.8 V, ID = 10 mA | 1.8 | 2.7 | ||
| Forward Transconductance | gfs | VDS = 10 V, ID = 250 mA | 0.4 | S | ||
| Diode Forward Voltage | VSD | IS = 150 mA, VGS = 0 V | -0.8 | -1.2 | V | |
| Total Gate Charge | Qg | VDS = 10 V, VGS = 4.5 V, ID = 250 mA | 1500 | pC | ||
| Gate-Source Charge | Qgs | VDS = 10 V, VGS = 4.5 V, ID = 250 mA | 150 | pC | ||
| Gate-Drain Charge | Qgd | VDS = 10 V, VGS = 4.5 V, ID = 250 mA | 450 | pC | ||
| Turn-On Delay Time | td(on) | VDD = 10 V, RL = 47 , ID = 200 mA, VGEN = 4.5 V, RG = 10 | 9 | ns | ||
| Rise Time | tr | VDD = 10 V, RL = 47 , ID = 200 mA, VGEN = 4.5 V, RG = 10 | 14 | ns | ||
| Turn-Off Delay Time | td(off) | VDD = 10 V, RL = 47 , ID = 200 mA, VGEN = 4.5 V, RG = 10 | 35 | ns | ||
| Fall Time | tf | VDD = 10 V, RL = 47 , ID = 200 mA, VGEN = 4.5 V, RG = 10 | 11 | ns | ||
| Ordering Information | LSI1013LT1G | Shipping 3000/Tape&Reel | ||||
| Ordering Information | LSI1013LT3G | Shipping 10000/Tape&Reel |
Note: For graphs, p-channel negative polarities for all voltage and current values are represented as positive values.
2204291445_LRC-LSI1013LT1G_C383276.pdf
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