N channel Trench MOSFET MagnaChip Semicon MDP1921TH suitable for power conversion applications
Key Attributes
Model Number:
MDP1921TH
Product Custom Attributes
Mfr. Part #:
MDP1921TH
Package:
TO-220
Product Description
Product Overview
The MDP1921 is a single N-channel Trench MOSFET from Magnachip Semiconductor Ltd. It leverages advanced MOSFET technology to deliver high performance in on-state resistance and fast switching capabilities, along with excellent quality. This MOSFET is well-suited for DC/DC converter and general-purpose applications.
Product Attributes
- Brand: Magnachip Semiconductor Ltd.
- Certifications: Halogen Free
Technical Specifications
| Characteristics | Symbol | Rating | Unit | Test Condition | Min | Typ | Max | |
| Absolute Maximum Ratings | VDSS | 100 | V | |||||
| VGSS | ±20 | V | ||||||
| ID | 153 | A | TC=25°C (Silicon Limited) | |||||
| ID | 120 | A | TC=25°C (Package Limited) | |||||
| ID | 97 | A | TC=100°C | |||||
| IDM | 480 | A | Pulsed Drain Current | |||||
| PD | 223 | W | TC=25°C | |||||
| PD | 89 | W | TC=100°C | |||||
| Thermal Characteristics | RθJA | 62.5 | °C/W | Thermal Resistance, Junction-to-Ambient | ||||
| RθJC | 0.56 | °C/W | Thermal Resistance, Junction-to-Case | |||||
| TJ, Tstg | -55~150 | °C | Junction and Storage Temperature Range | |||||
| Static Characteristics | BVDSS | 100 | V | ID = 250µA, VGS = 0V | 100 | - | - | |
| VGS(th) | - | V | VDS = VGS, ID = 250µA | 2.0 | 2.9 | 4.0 | ||
| IDSS | - | µA | VDS = 80V, VGS = 0V | - | - | 1.0 | ||
| IGSS | - | ±µA | VGS = ±20V, VDS = 0V | - | - | ±0.1 | ||
| RDS(ON) | - | mΩ | VGS = 10V, ID = 50A | - | 3.8 | 4.5 | ||
| gfs | - | S | VDS = 10V, ID = 50A | - | 120 | - | ||
| Dynamic Characteristics | Qg | - | nC | VDS = 50V, ID = 50A, VGS = 10V | - | 100 | - | |
| Qgs | - | - | - | 27 | - | |||
| Qgd | - | - | - | 26 | - | |||
| Ciss | - | pF | VDS = 40V, VGS = 0V, f = 1.0MHz | - | 6750 | - | ||
| Coss | - | pF | - | 50 | - | |||
| Drain-Source Body Diode Characteristics | VSD | - | V | IS = 50A, VGS = 0V | - | 0.9 | 1.2 | |
| trr | - | ns | IF = 50A, dl/dt = 100A/µs | - | 73 | - | ||
| Qrr | - | nC | - | 150 | - | |||
| EAS | 609 | mJ | Single Pulse Avalanche Energy | |||||
| Ordering Information | Part Number | Temp. Range | Package | Packing | RoHS Status | |||
| MDP1921TH | -55~150°C | TO-220 | Tube | Halogen Free |
2509121533_MagnaChip-Semicon-MDP1921TH_C24802928.pdf
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