Microdiode Semiconductor MMBT5401T PNP Transistor SOT523 Package Complementary to MMBT5551T Medium Power
Key Attributes
Model Number:
MMBT5401T
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
150mW
Transition Frequency(fT):
100MHz
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
150V
Mfr. Part #:
MMBT5401T
Package:
SOT-523
Product Description
Product Overview
The MMBT5401T is a PNP bipolar transistor in a SOT-523 plastic-encapsulated package. It is complementary to the MMBT5551T and is ideal for medium power amplification and switching applications. Its small surface mount package makes it suitable for various electronic designs.
Product Attributes
- Brand: Microdiode
- Package Type: SOT-523
- Transistor Type: PNP
- Complementary to: MMBT5551T
- Marking: 2L
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Breakdown Voltage | V(BR)CBO | IC =-100A, IE=0 | -160 | V | ||
| V(BR)CEO | IC =-1mA, IB=0 | -150 | V | |||
| V(BR)EBO | EI =-10A, IC=0 | -5 | V | |||
| Cut-off Current | ICBO | CB V =-120V, IE=0 | -160 | nA | ||
| IEBO | EB V =-3V, IC=0 | -50 | nA | |||
| DC Current Gain | hFE(1) | VCE=-5V, IC=-1mA | 50 | |||
| hFE(2) | VCE=-5V, IC=-10mA | 100 | ||||
| hFE(3) | VCE=-5V, IC=-50mA | 50 | ||||
| Saturation Voltage | VCE(sat)1 | IC=-10mA, IB=-1mA | -0.2 | -0.5 | V | |
| VCE(sat)2 | IC=-50mA, IB=-5mA | -1 | -1 | V | ||
| Base-Emitter Saturation Voltage | VBE(sat)1 | IC=-10mA, IB=-1mA | -0.2 | -0.5 | V | |
| VBE(sat)2 | IC=-50mA, IB=-5mA | -1 | -1 | V | ||
| Transition Frequency | fT | CE V =-10V,IC=-10mA, f=100MHz | 100 | MHz | ||
| Collector Output Capacitance | Cob | CB V =-10V, IE=0,f=1MHz | 6 | pF |
| Symbol | Parameter | Value | Unit |
| VCBO | Collector-Base Voltage | -160 | V |
| VCEO | Collector-Emitter Voltage | -150 | V |
| VEBO | Emitter-Base Voltage | -5 | V |
| IC | Collector Current | -0.6 | A |
| PC | Collector Power Dissipation | 0.15 | W |
| RJA | Thermal Resistance Junction To Ambient | 833 | /W |
| Tj | Junction Temperature | 150 | |
| Tstg | Storage Temperature | -55+150 |
2507221720_MDD-Microdiode-Semiconductor-MMBT5401T_C49383132.pdf
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