Power field effect transistor MATSUKI ME55N06A-G with high current rating and low on state resistance
Key Attributes
Model Number:
ME55N06A-G
Product Custom Attributes
Drain To Source Voltage:
75V
Current - Continuous Drain(Id):
64A
Operating Temperature -:
-55℃~+150℃
RDS(on):
9.5mΩ@10V,25A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
194pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
1.563nF@15V
Pd - Power Dissipation:
63W
Gate Charge(Qg):
-
Mfr. Part #:
ME55N06A-G
Package:
TO-252-2
Product Description
Product Overview
The ME55N06A is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device ideal for low-voltage applications such as cellular phones, notebook computer power management, and other battery-powered circuits. Its low in-line power loss is particularly beneficial in very small outline surface mount packages.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Pb-free (ME55N06A), Green product-Halogen free (ME55N06A-G)
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Maximum Ratings | VDS | 75 | V | |||
| VGS | ±25 | V | ||||
| ID | TC=25 | 64 | A | |||
| ID | TC=70 | 51 | A | |||
| IDM | 256 | A | ||||
| PD | TC=25 | 63 | W | |||
| PD | TC=70 | 40 | W | |||
| TJ, Tstg | -55 | 150 | ||||
| RJC* | 2 | /W | ||||
| Electrical Characteristics | BVDSS | VGS=0V, ID=250A | 75 | V | ||
| VGS(th) | VDS=VGS, ID=250A | 2 | 4 | V | ||
| IGSS | VDS=0V, VGS=±20V | ±100 | nA | |||
| IDSS | VDS=75V, VGS=0V | 1 | μA | |||
| RDS(ON) | VGS=10V, ID=25A | 7.5 | 9.5 | mΩ | ||
| VSD | IS=25A, VGS=0V | 0.85 | 1.2 | V | ||
| Qg | VDS=44V, VGS=10V, ID=25A | 114 | nC | |||
| Dynamic Characteristics | Qg | VDS=44V, VGS=4.5V, ID=25A | 26 | |||
| Qgs | 34 | |||||
| Qgd | 33 | |||||
| Ciss | VDS=15V, VGS=0V, f=1MHz | 1563 | pF | |||
| Coss | 363 | |||||
| Crss | 194 | |||||
| Switching Characteristics | td(on) | VDD=28V, RL=28Ω, VGS =10V, RG=4.5Ω | 51.4 | ns | ||
| tr | 19.3 | |||||
| td(off) | 104 | |||||
| tf | 19.9 |
2410121657_MATSUKI-ME55N06A-G_C709754.pdf
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