MDD Microdiode Semiconductor 2SC1623 transistor suitable for switching and amplification in circuits
Key Attributes
Model Number:
2SC1623
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
250MHz
Type:
NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
2SC1623
Package:
SOT-23
Product Description
Product Overview
The 2SC1623 is an NPN plastic-encapsulated transistor in a SOT-23 package. It features high DC current gain (hFE=200 Typ) and high voltage capability (VCEO=50V), making it suitable for various electronic applications.
Product Attributes
- Brand: microdiode
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Test Conditions | Value | Unit |
| Collector-Base Voltage | VCBO | 60 | V | |
| Collector-Emitter Voltage | VCEO | 50 | V | |
| Emitter-Base Voltage | VEBO | 5 | V | |
| Collector Current | IC | 100 | mA | |
| Collector Power Dissipation | PC | 200 | mW | |
| Junction Temperature | Tj | 150 | ||
| Storage Temperature | Tstg | -55+150 | ||
| Collector-base breakdown voltage | V(BR)CBO | IC=100A,IE=0 | 60 | V |
| Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA,IB=0 | 50 | V |
| Emitter-base breakdown voltage | V(BR)EBO | IE=100A,IC=0 | 5 | V |
| Collector cut-off current | ICBO | VCB=60V,IE=0 | 0.1 | A |
| Emitter cut-off current | IEBO | VEB=5V,IC=0 | 0.1 | A |
| DC current gain | hFE | VCE=6V,IC=1mA | 90-600 | |
| (Typ) | 200 | |||
| (Min) | 90 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC=100mA,IB=10mA | 0.3 | V |
| Base-emitter saturation voltage | VBE(sat) | IC=100mA,IB=10mA | 1 | V |
| Transition frequency | fT | CE V =6V,IC=10mA | 250 | MHz |
2411211946_MDD-Microdiode-Semiconductor-2SC1623_C2858495.pdf
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