Battery Powered Circuit P Channel MOSFET MATSUKI ME9435A with Small Outline Package and Dissipation
Key Attributes
Model Number:
ME9435A
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
6.3A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
31mΩ@10V,5.3A
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
35pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
960pF@15V
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
21nC@10V
Mfr. Part #:
ME9435A
Package:
SOP-8
Product Description
Product Overview
The ME9435A is a P-Channel logic enhancement mode power field-effect transistor utilizing high cell density DMOS trench technology. This advanced process minimizes on-state resistance, making it ideal for low-voltage applications such as cellular phones, notebook computer power management, and other battery-powered circuits. It offers lower power loss in a very small outline surface mount package.
Product Attributes
- Brand: Matsuki Electric/Force Mos
- Product Variants: ME9435A (Pb-free), ME9435A-G (Green product-Halogen free)
- Certifications: Halogen free (for ME9435A-G)
Technical Specifications
| Parameter | Symbol | ME9435A/ME9435A-G | Unit |
| Maximum Ratings (TA=25 Unless Otherwise Noted) | |||
| Drain-Source Voltage | VDS | -30 | V |
| Gate-Source Voltage | VGS | 20 | V |
| Continuous Drain Current | ID | -5 (TA=25), -6.3 (TA=70) | A |
| Pulsed Drain Current | IDM | -25 | A |
| Maximum Power Dissipation | PD | 2.5 (TA=25), 1.6 (TA=70) | W |
| Operating Junction Temperature | TJ | -55 to 150 | |
| Junction-to-Ambient Thermal Resistance* | RJA | 50 | /W |
| Electrical Characteristics (TA =25 Unless Otherwise Specified) | |||
| Drain-Source Breakdown Voltage | BVDSS | -30 (VGS=0V, ID=-250A) | V |
| Gate Threshold Voltage | VGS(th) | -1.0 to -3.0 (VDS=VGS, ID=-250A) | V |
| Gate Leakage Current | IGSS | 100 (VDS=0V, VGS=20V) | nA |
| Zero Gate Voltage Drain Current | IDSS | -1 (VDS=-24 VGS=0V) | A |
| Drain-Source On-State Resistance | RDS(ON) | 31 to 40 (VGS=-10V, ID= -5.3A), 40 to 60 (VGS=-4.5V, ID= -4.2A) | m |
| Input Capacitance | Ciss | 840 to 960 (VDS=-15V, VGS=0V, f=1.0MHz) | pF |
| Output Capacitance | Coss | 120 (VDS=-15V, VGS=0V, f=1.0MHz) | |
| Reverse Transfer Capacitance | Crss | 35 (VDS=-15V, VGS=0V, f=1.0MHz) | |
| Total Gate Charge | Qg | 21 to 25 (VDS=-15V, VGS=-10V, ID=-5.3A) | nC |
| Gate-Source Charge | Qgs | 5.4 (VDS=-15V, VGS=-10V, ID=-5.3A) | |
| Gate-Drain Charge | Qgd | 6 (VDS=-15V, VGS=-10V, ID=-5.3A) | |
| Turn-On Delay Time | td(on) | 32 to 40 (VDD=-15V, RL =15 ID=-1A, VGEN=-10V RG=6) | ns |
| Turn-On Rise Time | tr | 13 to 16 (VDD=-15V, RL =15 ID=-1A, VGEN=-10V RG=6) | |
| Turn-Off Delay Time | td(off) | 58 to 75 (VDD=-15V, RL =15 ID=-1A, VGEN=-10V RG=6) | |
| Turn-Off Fall Time | tf | 6 to 9 (VDD=-15V, RL =15 ID=-1A, VGEN=-10V RG=6) | |
2410121657_MATSUKI-ME9435A_C709739.pdf
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