MDD Microdiode Semiconductor MDD2302 N Channel MOSFET 20V load switch and power management component
Key Attributes
Model Number:
MDD2302
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-50℃~+150℃
RDS(on):
28mΩ@2.5V,4A
Gate Threshold Voltage (Vgs(th)):
500mV
Reverse Transfer Capacitance (Crss@Vds):
33pF
Number:
1 N-channel
Input Capacitance(Ciss):
340pF@10V
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
5.4nC@10V
Mfr. Part #:
MDD2302
Package:
SOT-23
Product Description
Product Overview
The MDD2302 is a 20V N-Channel Enhancement Mode MOSFET designed with advanced trench process technology and a high-density cell design for ultra-low on-resistance. It is suitable for load switch, switching circuits, high-speed line drivers, and power management functions. Its key features include a low on-resistance and high-density cell design.
Product Attributes
- Brand: Not Specified
- Origin: Not Specified
- Material: Not Specified
- Color: Not Specified
- Certifications: Not Specified
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings (TA=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current | ID | 4 | A | |||
| Power Dissipation (Note 2) | PD | 1.25 | W | |||
| Thermal Resistance from Junction to Ambient (Note 2) | RJA | 100 | /W | |||
| Junction Temperature and Storage Temperature | TJ,Tstg | -50 | 150 | |||
| Pulsed Drain Current (Note 1) | IDM | 12 | A | |||
| Electrical Characteristics (Ta = 25 unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 20 | -- | -- | V |
| Gate-Source Leakage Current | IDSS | VDS=20V, VGS=0V | -- | -- | 1 | uA |
| Drain-Source Leakage Current | IGSS | VGS=±10V, VDS=0V | -- | -- | ±100 | nA |
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=250A | 0.5 | 1.2 | -- | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, ID=4A | -- | 25 | 30 | m |
| VGS=2.5V, ID=3A | -- | 28 | 35 | m | ||
| Dynamic Electrical Characteristics | ||||||
| Input Capacitance | Ciss | VDS=10V, VGS=0V, f=1MHz | -- | 340 | -- | pF |
| Output Capacitance | Coss | VDS=10V, VGS=0V, f=1MHz | -- | 115 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=10V, VGS=0V, f=1MHz | -- | 33 | -- | pF |
| Total Gate Charge | Qg | VDS=10V, VGS=4.5V, ID=3A | -- | 5.4 | -- | nC |
| Gate Source Charge | Qgs | VDS=10V, VGS=4.5V, ID=3A | -- | 0.65 | -- | nC |
| Gate Drain Charge | Qgd | VDS=10V, VGS=4.5V, ID=3A | -- | 1.6 | -- | nC |
| Switching Characteristics | ||||||
| Turn on Delay Time | td(on) | VDS=10V, VGS=4.5V, ID=3A, RG=6 | -- | 12 | -- | ns |
| Turn on Rise Time | tr | VDS=10V, VGS=4.5V, ID=3A, RG=6 | -- | 36 | -- | ns |
| Turn Off Delay Time | td(off) | VDS=10V, VGS=4.5V, ID=3A, RG=6 | -- | 34 | -- | ns |
| Turn Off Fall Time | tf | VDS=10V, VGS=4.5V, ID=3A, RG=6 | -- | 10 | -- | ns |
| Source Drain Diode Characteristics | ||||||
| Source drain current (Body Diode) | ISD | -- | -- | 1.6 | A | |
| Drain-Source Diode Forward Voltage | VSD | IS=1A, VGS=0V | -- | 0.8 | 1.2 | V |
2411211951_MDD-Microdiode-Semiconductor-MDD2302_C427390.pdf
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