PNP transistor luJing BC807-40 with collector emitter breakdown voltage of 45 volts and low saturation voltage
Key Attributes
Model Number:
BC807-40
Product Custom Attributes
Mfr. Part #:
BC807-40
Package:
SOT-23
Product Description
Product Overview
The BC807 series are general-purpose PNP bipolar transistors, ideally suited for automatic insertion. They feature epitaxial planar die construction and are available in complementary NPN types.
Product Attributes
- Case Style: SOT-23 Plastic Encapsulated Transistors
- Material: Molded Plastic
- Mounting Position: Any
- Origin: http://www.lujingsemi.com
Technical Specifications
| Parameter | Symbol | Test conditions | Min | Max | Unit |
| Collector-base breakdown voltage | VCBO | IC = -10 A | -50 | V | |
| Collector-emitter breakdown voltage | VCEO | IC = -1 mA | -45 | V | |
| Emitter-base breakdown voltage | VEBO | IE = -10 A | -5 | V | |
| Collector cut-off current | ICBO | VCB = -40 V | -100 | nA | |
| Emitter cut-off current | IEBO | VEB = -5 V | -100 | nA | |
| DC current gain | hFE | VCE = -5 V, IC = -150 mA | 100 | 600 | |
| Collector-emitter saturation voltage | VCE(sat) | IC = -500 mA, IB = -50 mA | -0.6 | V | |
| Base-emitter saturation voltage | VBE(sat) | IC = -500 mA, IB = -50 mA | -1.2 | V | |
| Transition frequency | fT | VCE = -5 V, IC = -50 mA, f = 100 MHz | 150 | MHz |
CLASSIFICATION OF hFE
| Rank | BC807-16 | BC807-25 | BC807-40 |
| Range | 100-250 | 160-400 | 250-600 |
| Marking | 5A | 5B | 5C |
MAXIMUM RATINGS AND CHARACTERISTICS
| Symbol | Parameter | Value | Unit |
| VCBO | Collector-Base Voltage | -50 | V |
| VCEO | Collector-Emitter Voltage | -45 | V |
| VEBO | Emitter-Base Voltage | -5 | V |
| IC | Collector Current | -500 | mA |
| PC | Collector Power Dissipation | 300 | mW |
| RJA | Thermal Resistance From Junction To Ambient | 417 | /W |
| Tj | Junction Temperature | 150 | |
| Tstg | Storage Temperature | -55 to +150 |
2512020921_luJing-BC807-40_C53058835.pdf
Related Products
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Product OverviewNPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.Product AttributesBrand: Not ...
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
