MASPOWER MS13N20HGD0 N channel MOSFET with 140W power dissipation and 52A pulse drain current rating
Key Attributes
Model Number:
MS13N20HGD0
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
13A
Operating Temperature -:
-55℃~+175℃
RDS(on):
120mΩ@10V,6.5A
Gate Threshold Voltage (Vgs(th)):
4V
Number:
1 N-channel
Pd - Power Dissipation:
140W
Input Capacitance(Ciss):
-
Gate Charge(Qg):
42nC@160V
Mfr. Part #:
MS13N20HGD0
Package:
TO-252
Product Description
Product Overview
The MS13N20HGD0 H1.01 Maspower is a high-efficiency N-channel MOSFET designed for demanding power applications. It features low gate charge, low Crss (typical 25pF), and fast switching capabilities, making it ideal for high-efficiency switch mode power supplies and electronic lamp ballasts. The device is 100% avalanche tested and offers improved dv/dt capability, ensuring robust performance and reliability. It is a RoHS compliant product.
Product Attributes
- Brand: Maspower
- Model: MS13N20HGD0 H1.01
- Certifications: RoHS
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Type | Max | Unit |
| Absolute Ratings | ||||||
| Drain-Source Voltage | VDSS | 200 | V | |||
| Drain Current -continuous | ID | Tc=25 | 13 | A | ||
| Drain Current - pulse | IDM | 52 | A | |||
| Gate-Source Voltage | VGSS | 30 | V | |||
| Single Pulsed Avalanche Energy | EAS | 259 | mJ | |||
| Power Dissipation | PD | Tc=25 | 140 | W | ||
| Operating and Storage Temperature Range | Tj,TSTG | -55 | +175 | |||
| Peak Diode Recovery dv/dt | dv/dt | 5.5 | V/ns | |||
| Maximum Lead Temperature for Soldering Purposes | TL | 300 | ||||
| Electrical Characteristics | ||||||
| Drain-Source Voltage | BVDSS | ID=250A,VGS=0V | 200 | - | - | V |
| Drain cut-off current | IDSS | VDS=200V,VGS=0V | - | - | 1 | A |
| Gate-body leakage current,forward | IGSSF | VDS=0V,VGS=30V | - | - | 100 | nA |
| Gate-body leakage current,reverse | IGSSR | VDS=0V,VGS=-30V | - | -100 | nA | |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250uA | 2 | - | 4 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V,ID=6.5A | - | 80 | 150 | m |
| Forward Transconductance | Gfs | VDS=40V,ID=6..5A | - | 14.5 | - | S |
| Input capacitance | Ciss | VDS=25V, VGS=0V, f=1.0MHZ | - | 350 | 1650 | pF |
| Output capacitance | Coss | - | 104 | 300 | pF | |
| Reverse transfer capacitance | Crss | - | 15 | 40 | pF | |
| Gate Resistance | RG | f=1.0MHZ | - | 0.5 | 2.5 | |
| Turn-On delay time | td(on) | VDD=100V,ID=13A., RG=25 | - | 9 | 21 | ns |
| Turn-On rise time | tr | - | 16.5 | 60 | ns | |
| Turn-Off delay time | Td(off) | - | 21.5 | 71.5 | ns | |
| Turn-Off Fall time | tf | - | 6.8 | 18.8 | ns | |
| Total Gate Charge | Qg | VDS=160V, ID=13A, VGS=10V | - | 12 | 42 | nC |
| Gate-Source charge | Qgs | - | 2.5 | 8.9 | nC | |
| Gate-Drain charge | Qg d | - | 5.8 | 15.8 | nC | |
| Drain-Source Diode Characteristics | ||||||
| Drain-Source Diode Forward Voltage | VSD | VGS=0V,IS=13A | - | - | 1.4 | V |
| Maximum Continuous Drain-Source Diode Forward Current | IS | - | - | 13 | A | |
| Reverse recovery time | trr | VGS=0V,IF=13A dIF/dt=100A/us | - | 124 | 324 | ns |
| Reverse recovery charge | Qrr | - | 0.58 | 2.18 | C | |
| Thermal Characteristic | ||||||
| Thermal Resistance, Junction-to-Case | RJC | 0.89 | /W | |||
| Thermal Resistance, Junction-to-Ambient | RJA | 62.5 | /W | |||
2409302301_MASPOWER-MS13N20HGD0_C7424119.pdf
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