High Cell Density DMOS Trench Power Transistor MATSUKI ME2602 N Channel Logic Enhancement Mode Device
Key Attributes
Model Number:
ME2602
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
3.2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
80mΩ@10V,3.7A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
43pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
905pF@15V
Pd - Power Dissipation:
1.9W
Gate Charge(Qg):
14nC@4.5V
Mfr. Part #:
ME2602
Package:
SOT-223-3
Product Description
Product Overview
The ME2602 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced design minimizes on-state resistance, offering exceptional on-resistance and maximum DC current capability. It is ideal for applications such as DC/DC converters and load switches.
Product Attributes
- Brand: Matsuki Electric/Force Mos
- Product Series: ME2602/ME2602-G
- Technology: N-Channel logic enhancement mode, DMOS trench
- Certifications: Pb-free (ME2602), Green product-Halogen free (ME2602-G)
- Package: SOT-223
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Maximum Ratings | VDS | Drain-Source Voltage | 100 | V | ||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID | Continuous Drain Current (TA=25) | 4 | A | |||
| ID | Continuous Drain Current (TA=70) | 3.2 | A | |||
| IDM | Pulsed Drain Current | 16 | A | |||
| PD | Maximum Power Dissipation (TA=25) | 3 | W | |||
| PD | Maximum Power Dissipation (TA=70) | 1.9 | W | |||
| Electrical Characteristics | VBR(DSS) | Drain-Source Breakdown Voltage (VGS=0V, ID=250A) | 100 | V | ||
| VGS(th) | Gate Threshold Voltage (VDS=VGS, ID=250A) | 1.0 | 3.0 | V | ||
| IGSS | Gate Leakage Current (VDS=0V, VGS=20V) | 100 | nA | |||
| IDSS | Zero Gate Voltage Drain Current (VDS=100V, VGS=0V) | 1 | A | |||
| RDS(ON) | Drain-Source On-Resistance (VGS=10V, ID= 3.7A) | 80 | 100 | m | ||
| RDS(ON) | Drain-Source On-Resistance (VGS=4.5V, ID= 3.5A) | 85 | 115 | m | ||
| VSD | Diode Forward Voltage (IS=2.5A, VGS=0V) | 0.8 | 1.2 | V | ||
| Qg | Total Gate Charge (VDS=80V, VGS=10V, ID=2.5A) | 24 | nC | |||
| Qg | Total Gate Charge (VDS=80V, VGS=4.5V, ID=2.5A) | 14 | ||||
| Ciss | Input capacitance (VDS=15V, VGS=0V, f=1.0MHz) | 905 | pF | |||
| Dynamic Characteristics | td(on) | Turn-On Delay Time (VDD=50V, RL =10, VGEN=10V, RG=6) | 15 | ns | ||
| tr | Turn-On Rise Time | 8 | ||||
| td(off) | Turn-Off Delay Time | 47 | ||||
| tf | Turn-Off Fall Time | 6 | ||||
| Qgs | Gate-Source Charge | 3.8 | ||||
| Qgd | Gate-Drain Charge | 7.5 | ||||
| Package Outline (SOT-223-3L) | A | 1.80 | ||||
| A1 | 0.02 | 0.10 | ||||
| b | 0.66 | 0.76 | 0.84 | |||
| D | 6.30 | 6.50 | 6.70 | |||
| E | 6.70 | 7.00 | 7.30 | |||
| e | 2.30 BSC |
2411220411_MATSUKI-ME2602_C709747.pdf
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