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quality Power MOSFET MASPOWER MS140N30HGC0 with TO 247 package and 140 amperes continuous drain current factory
quality Power MOSFET MASPOWER MS140N30HGC0 with TO 247 package and 140 amperes continuous drain current factory

Power MOSFET MASPOWER MS140N30HGC0 with TO 247 package and 140 amperes continuous drain current

Key Attributes
Model Number: MS140N30HGC0
Product Custom Attributes
Drain To Source Voltage:
300V
Current - Continuous Drain(Id):
140A
RDS(on):
35mΩ@10V,70A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
5V
Reverse Transfer Capacitance (Crss@Vds):
55pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
375W
Input Capacitance(Ciss):
14.8nF@25V
Gate Charge(Qg):
185nC@10V
Mfr. Part #:
MS140N30HGC0
Package:
TO-247
Product Description

Product Overview

The MS140N30HGB3/C0 is a high-performance Maspower MOSFET designed for power switching applications. It features a VDS of 300V and an ID of 140A with an ultra-low RDS(on) of less than 35m at VGS=10V, achieved through a high-density cell design. Key advantages include low gate charge and improved dv/dt capability, making it suitable for isolated DC/DC converters in Telecom and Industrial sectors, as well as synchronous rectification in DC/DC Converters. This product is RoHS compliant.

Product Attributes

  • Brand: Maspower
  • Model: MS140N30HGB3/C0
  • Certifications: RoHS

Technical Specifications

ParameterSymbolTO-264 (MS140N30HGB3)TO-247 (MS140N30HGC0)Unit
Drain-Source VoltageVDSS300300V
Gate-Source VoltageVGSS2020V
Drain Current-continuousID140140A
Drain Current-pulseIDM300300A
Single Pulsed Avalanche EnergyEAS55J
Maximum Power DissipationPD1040 (TC=25)375 (TC=25)W
Operating and Storage Temperature RangeTJ,TSTG-55~+150-55~+150
Gate Threshold VoltageVGS(th)3.0 - 5.03.0 - 5.0V
Static Drain-Source On-ResistanceRDS(ON)<35 (Typ. 32 @ VGS=10V,ID=70A)<35 (Typ. 32 @ VGS=10V,ID=70A)m
Forward Transconductancegfs50 - 90 (VDS=20V,ID=70A)50 - 90 (VDS=20V,ID=70A)S
Input capacitanceCiss14.8 (Typ. @ VDS=25V, VGS=0V, f=1.0MHZ)14.8 (Typ. @ VDS=25V, VGS=0V, f=1.0MHZ)nF
Output capacitanceCoss1830 (Typ. @ VDS=25V, VGS=0V, f=1.0MHZ)1830 (Typ. @ VDS=25V, VGS=0V, f=1.0MHZ)pF
Reverse transfer capacitanceCrss55 (Typ. @ VDS=25V, VGS=0V, f=1.0MHZ)55 (Typ. @ VDS=25V, VGS=0V, f=1.0MHZ)pF
Turn-On delay timetd(on)30 (Typ. @ VDS=150V,ID=70A, RG=1, VGS=10V)30 (Typ. @ VDS=150V,ID=70A, RG=1, VGS=10V)ns
Turn-On rise timetr30 (Typ.)30 (Typ.)ns
Turn-Off delay timetd(Off)100 (Typ.)100 (Typ.)ns
Turn-Off rise timetf20 (Typ.)20 (Typ.)ns
Total Gate ChargeQg185 (Typ. @ VDS=150V,ID=70A, VGS=10V)185 (Typ. @ VDS=150V,ID=70A, VGS=10V)nC
Gate-Source chargeQgs72 (Typ.)72 (Typ.)nC
Gate-Drain chargeQgd60 (Typ.)60 (Typ.)nC
Drain-Source Diode Forward CurrentIS140 (TC=25)140 (TC=25)A
Diode Forward VoltageVSD1.3 (Typ. @ VGS=0V,IS=70A)1.3 (Typ. @ VGS=0V,IS=70A)V
Reverse recovery timeTrr350 (Typ. @ IS=25A,DI/DT=100A/ S)350 (Typ. @ IS=25A,DI/DT=100A/ S)nS
Reverse recovery chargeQrr0.6 (Typ.)0.6 (Typ.)C
Thermal Resistance,junction to CaseRth(j-C)0.120.4/W

2409302302_MASPOWER-MS140N30HGC0_C5456512.pdf

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