Energy DMOS trench transistor MATSUKI ME04N25-G for low voltage power management in portable devices
Key Attributes
Model Number:
ME04N25-G
Product Custom Attributes
Drain To Source Voltage:
250V
Current - Continuous Drain(Id):
3.3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
3.5V
Reverse Transfer Capacitance (Crss@Vds):
10pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
1.17nF@15V
Pd - Power Dissipation:
31W
Gate Charge(Qg):
-
Mfr. Part #:
ME04N25-G
Package:
TO-252
Product Description
Product Overview
The ME04N25 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making it ideal for low-voltage applications like cellular phone and notebook computer power management, as well as other battery-powered circuits. Its low in-line power loss is particularly beneficial in very small outline surface mount packages.
Product Attributes
- Brand: Not explicitly stated, but implied by model numbers ME04N25/ME04N25-G.
- Origin: Not specified.
- Material: DMOS trench technology.
- Color: Not specified.
- Certifications: ME04N25 (Pb-free), ME04N25-G (Green product-Halogen free).
Technical Specifications
| Parameter | Symbol | Rating Unit | Limit Min | Typ | Max | Unit |
| Absolute Maximum Ratings (TA=25 Unless Otherwise Noted) | ||||||
| Drain-Source Voltage | VDSS | 250 | V | |||
| Gate-Source Voltage | VGSS | ±20 | V | |||
| Continuous Drain Current | ID | 3.3 (TC=25) / 2.6 (TC=70) | A | |||
| Pulsed Drain Current | IDM | 13 | A | |||
| Maximum Power Dissipation | PD | 31 (TC=25) / 20 (TC=70) | W | |||
| Operating Junction Temperature | TJ | -55 to 150 | ||||
| Thermal Resistance-Junction to Case | RJC | 4.0 | /W | |||
| Electrical Characteristics (TA =25 Unless Otherwise Specified) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 250 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 1.5 | 3.5 | V | |
| Gate Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=250V, VGS=0V | 1 | μA | ||
| Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID= 1.5A | 1.5 | 1.8 | Ω | |
| VGS=5V, ID= 0.8A | 1.55 | 2.0 | Ω | |||
| Diode Forward Voltage | VSD | IS=3A, VGS=0V | 0.86 | 1.2 | V | |
| Dynamic Characteristics (TJ =25 Noted) | ||||||
| Total Gate Charge | Qg | VDS=200V, VGS=10V, ID=1.5A | 30 | nC | ||
| Gate-Source Charge | Qgs | 17 | nC | |||
| Gate-Drain Charge | Qgd | VDS=200V, VGS=4.5V, ID=1.5A | 12 | nC | ||
| Input Capacitance | Ciss | VDS=15V, VGS=0V,f=1MHz | 1170 | pF | ||
| Output Capacitance | Coss | 36 | pF | |||
| Reverse Transfer Capacitance | Crss | 10 | pF | |||
| Turn-On Delay Time | td(on) | VDS=125V, RL =125, VGEN=10V, RG=6 | 19 | ns | ||
| Turn-On Rise Time | tr | 4 | ns | |||
| Turn-Off Delay Time | td(off) | 48 | ns | |||
| Turn-Off Fall Time | tf | 13 | ns | |||
2411220243_MATSUKI-ME04N25-G_C704954.pdf
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