Low resistance power transistor MATSUKI ME25N06 optimized for power management in mobile electronics
Key Attributes
Model Number:
ME25N06
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
16A
Operating Temperature -:
-55℃~+150℃
RDS(on):
86mΩ@4.5V,10A
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
14pF
Number:
1 N-channel
Input Capacitance(Ciss):
523pF
Output Capacitance(Coss):
47pF
Pd - Power Dissipation:
16W
Gate Charge(Qg):
17nC@10V
Mfr. Part #:
ME25N06
Package:
TO-252-2(DPAK)
Product Description
Product Overview
The ME25N06 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface-mount package. Key features include low RDS(ON) at various gate-source voltages and a super high density cell design for extremely low on-resistance and maximum DC current capability.
Product Attributes
- Brand: Matsuki Electric/ Force mos
- Certifications: Pb-free (ME25N06), Green product-Halogen free (ME25N06-G)
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| STATIC | BVDSS | VGS=0V, ID=250A | 60 | V | ||
| VGS(th) | VDS=VGS, ID=250A | 1 | 3 | V | ||
| IGSS | VDS=0V, VGS=25V | 100 | nA | |||
| IDSS | VDS=60V, VGS=0V | 1 | A | |||
| RDS(ON) | VGS=10V, ID=15A | 52 | 62 | m | ||
| VGS=4.5V, ID=10A | 70 | 86 | m | |||
| VSD | IS=15A, VGS=0V | 1 | 1.2 | V | ||
| DYNAMIC | Qg | VDS=48V, VGS=10V, ID=16A | 17 | nC | ||
| Qgs | 4.2 | |||||
| Qgd | 5 | |||||
| Rg | VDS=0V, VGS=0V, f=1MHz | 0.6 | ||||
| Ciss | VDS=30V, VGS=0V, f=1MHz | 523 | pF | |||
| Coss | 47 | |||||
| Crss | 14 | |||||
| Switching Time | td(on) | VDD=30V, RL =15, VGEN=10V,RG=3 | 11 | ns | ||
| tr | 13 | |||||
| td(off) | 34 | |||||
| tf | ||||||
| Maximum Ratings | VDS | 60 | V | |||
| VGS | 25 | V | ||||
| ID (TC=25) | 16 | A | ||||
| ID (TC=70) | 13 | A | ||||
| IDM | 65 | A | ||||
| PD (TC=25) | 25 | W | ||||
| PD (TC=70) | 16 | W | ||||
| Operating Junction Temperature | TJ | -55 | 150 | |||
| Thermal Resistance-Junction to Case | RJC | * | 5 | /W |
2411192313_MATSUKI-ME25N06_C165228.pdf
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