Microdiode Semiconductor MDD MDD2304 30V N Channel Enhancement Mode MOSFET with Pb Free SOT23 package

Key Attributes
Model Number: MDD2304
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
2.5A
RDS(on):
26mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.6V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
17pF
Input Capacitance(Ciss):
240pF
Output Capacitance(Coss):
110pF
Pd - Power Dissipation:
250mW
Gate Charge(Qg):
4.5nC@10V
Mfr. Part #:
MDD2304
Package:
SOT-23
Product Description

Product Overview

The MDD2304 is a 30V N-Channel Enhancement Mode MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. Designed for a wide range of applications, it offers 5V logic level control and is available in a Pb-free, RoHS compliant SOT23 package.

Product Attributes

  • Brand: MDD2304
  • Channel Type: N-Channel
  • Mode: Enhancement Mode
  • Package: SOT23
  • Compliance: PbFree, RoHS Compliant

Technical Specifications

ParameterSymbolConditionMinTypMaxUnit
Electrical CharacteristicsV(BR)DSSVGS=0V, ID=250A30----V
IDSSVDS=30V, VGS=0V----1uA
IGSSVDS=20V, VDS=0V----100nA
VGS(TH)VDS=VGS, ID=250A1.02.5--V
On-State ResistanceRDS(ON)VGS=10V, ID=3.6A, TA=25--35--m
VGS=4.5V, ID=2.0A, TA=25--53--m
VGS=4.5V, ID=2.0A, TA=125--85--m
Dynamic Electrical CharacteristicsCissVDS=15V, VGS=0V, f=1MHz--240--pF
CossVDS=15V, VGS=0V, f=1MHz--110--pF
CrssVDS=15V, VGS=0V, f=1MHz--17--pF
Switching Characteristicstd(on)VDS=15V, VGS =10V, ID=1A, RG=6.0--8--ns
trVDS=15V, VGS =10V, ID=1A, RG=6.0--12--ns
td(off)VDS=15V, VGS =10V, ID=1A, RG=6.0--17--ns
tfVDS=15V, VGS =10V, ID=1A, RG=6.0--8--ns
Source Drain Diode CharacteristicsISDSource drain current(Body Diode)----1.8A
VSDIS=4A, VGS=0V--1.2--V

2507221720_MDD-Microdiode-Semiconductor-MDD2304_C49383128.pdf

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