Switching and Amplification MCC MMBT3904-TP NPN Transistor with Moisture Sensitivity Level 1 Rating
Key Attributes
Model Number:
MMBT3904-TP
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
350mW
Transition Frequency(fT):
300MHz
Type:
NPN
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
MMBT3904-TP
Package:
SOT-23
Product Description
Product Overview
The MMBT3904 is a general-purpose NPN amplifier designed for various electronic applications. It features a lead-free, RoHS-compliant finish and a moisture sensitivity level 1 rating. This device is suitable for use in applications requiring reliable amplification and switching capabilities.
Product Attributes
- Brand: MCCSEMI
- Certifications: RoHS Compliant, Halogen Free (available upon request), UL 94 V-0 Flammability Rating
- Material: Epoxy
- Origin: Not specified
- Color: Not specified
Technical Specifications
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
| Collector Current | IC | 200 | mA | |||
| Collector Power Dissipation | PC | 350 | mW | |||
| Collector-Emitter Voltage | VCEO | 40 | V | |||
| Emitter-Base Voltage | VEBO | 6 | V | |||
| Collector-Base Voltage | VCBO | 60 | V | |||
| Operating Junction Temperature Range | -55 | 150 | ||||
| Storage Temperature Range | -55 | 150 | ||||
| Thermal Resistance (Junction to Ambient) | 357 | /W | ||||
| Thermal Resistance (Junction to Case) | 185 | /W | ||||
| Collector-Emitter Breakdown Voltage* | V(BR)CEO | 40 | V | IC=10A, IE=0 | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | 60 | V | IC=1mA, IB=0 | ||
| Collector Cutoff Current | ICBO | 50 | nA | VCB=30V, IE=0 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | 6 | V | IE=10A, IC=0 | ||
| DC Current Gain* | hFE(1) | 40 | VCE=1V, IC=0.1mA | |||
| DC Current Gain* | hFE(2) | 70 | VCE=1V, IC=1mA | |||
| DC Current Gain* | hFE(3) | 100 | 300 | VCE=1V, IC=10mA | ||
| DC Current Gain* | hFE(4) | 60 | VCE=1V, IC=50mA | |||
| DC Current Gain* | hFE(5) | 30 | VCE=1V, IC=100mA | |||
| Collector Cutoff Current | ICEX | 50 | nA | VCE=1V, IC=1mA | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.3 | V | IC=10mA, IB=1mA | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.2 | V | IC=50mA, IB=5mA | ||
| Base-Emitter Saturation Voltage | VBE(sat) | 0.65 | 0.85 | V | IC=10mA, IB=1mA | |
| Base-Emitter Saturation Voltage | VBE(sat) | 0.95 | V | IC=50mA, IB=5mA | ||
| Output Capacitance | Ccbo | 4.0 | pF | VCB=30V, VBE=3V | ||
| Transition Frequency | fT | 300 | MHz | VCE=20V, IC=10mA, f=100MHz | ||
| Noise Figure | NF | 5 | dB | VCB=5V, IE=0, f=1MHz | ||
| Input Capacitance | Cibo | 8.0 | pF | RS=1K, f=10Hz to 15.7KHz | ||
| Rise Time | tr | 35 | ns | VCC=3V, IC=10mA | ||
| Delay Time | td | 35 | ns | VBE=0.5V, IC=0, f=1MHz | ||
| Fall Time | tf | 50 | ns | VCC=3V, IC=10mA, IB1=1mA | ||
| Storage Time | ts | 200 | ns | IB1=IB2=1mA |
2410010231_MCC-MMBT3904-TP_C77991.pdf
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