MDD Microdiode Semiconductor MDD20N50F 500V N Channel MOSFET with 37.8W power dissipation capability
Key Attributes
Model Number:
MDD20N50F
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
20A
RDS(on):
230mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
19pF
Output Capacitance(Coss):
263pF
Input Capacitance(Ciss):
3.078nF
Pd - Power Dissipation:
37.8W
Gate Charge(Qg):
50.5nC@10V
Mfr. Part #:
MDD20N50F
Package:
TO-220F
Product Description
Product Overview
The MDD20N50F is a 500V N-Channel Enhancement Mode MOSFET designed for high-efficiency power applications. It features low RDS(on), low gate charge, and is 100% UIS tested. This MOSFET is RoHS compliant and suitable for power factor correction and switched-mode power supplies.
Product Attributes
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Value | Unit | Condition |
| Drain-Source Voltage | VDS | 500 | V | |
| Gate-Source Voltage | VGS | ±30 | V | |
| Continuous Drain Current | ID | 20 | A | (Tc=25) |
| RDS(on),max | RDS(on),max | 0.29 | Ω | @VGS=10V |
| Qg,typ | Qg,typ | 50.5 | nC | |
| Power Dissipation | PD | 37.8 | W | TO-220F |
| Junction Temperature | TJ | 150 | °C | |
| Storage Temperature | Tstg | -55 ~150 | °C | |
| Pulsed Drain Current | IDM | 1200 | A | (Note 1) |
| Avalanche Energy Single Pulsed | EAS | 80 | mJ | (Note 2) |
| Thermal resistance, Junction-to-case | RθJC | 3.3 | °C/W | TO-220F |
| Thermal resistance, Junction-to-ambient | RθJA | 60 | °C/W | (Note 3) |
| Input Capacitance | Ciss | 3078 | pF | VDS=25V, VGS=0V, f=250KHz |
| Output Capacitance | Coss | 263 | pF | VDS=25V, VGS=0V, f=250KHz |
| Reverse Transfer Capacitance | Crss | 19 | pF | VDS=25V, VGS=0V, f=250KHz |
| Total Gate Charge | Qg | 50.5 | nC | VDS=400V, VGS=10V, ID=20A (Note1,2) |
| Gate Source Charge | Qgs | 12.7 | nC | VDS=400V, VGS=10V, ID=20A (Note1,2) |
| Gate Drain Charge | Qgd | 15.8 | nC | VDS=400V, VGS=10V, ID=20A (Note1,2) |
| Turn on Delay Time | td(on) | 22.7 | ns | VDS=250V, ID=10A, RG=5Ω (Note1,2) |
| Turn on Rise Time | tr | 16.4 | ns | VDS=250V, ID=10A, RG=5Ω (Note1,2) |
| Turn Off Delay Time | td(off) | 127 | ns | VDS=250V, ID=10A, RG=5Ω (Note1,2) |
| Turn Off Fall Time | tf | 15.2 | ns | VDS=250V, ID=10A, RG=5Ω (Note1,2) |
| Drain-Source Diode Forward Voltage | VSD | 1.3 | V | IS=10A, VGS=0V |
| Body Diode Reverse Recovery Time | trr | 313.2 | ns | IF=20A, -diF/dt =100A/µs |
| Body Diode Reverse Recovery Charge | Qrr | 3.3 | µC | IF=20A, -diF/dt =100A/µs |
| Drain-Source Breakdown Voltage | V(BR)DSS | 500 | V | VGS=0V, ID=250μA |
| Gate-Source Leakage Current | IGSS | 100 | nA | VGS=30V, VDS=0V |
| Drain-Source Leakage Current | IDSS | 1 | μA | VDS=500V, VGS=0V |
| Gate Threshold Voltage | VGS(TH) | 2.0 - 4.0 | V | VDS=VGS, ID=250μA |
| Drain-Source On-State Resistance | RDS(ON) | 0.29 | Ω | VGS=10V, ID=10A |
2506181720_MDD-Microdiode-Semiconductor-MDD20N50F_C49230729.pdf
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