MDD Microdiode Semiconductor MDD10N65F 650V N Channel MOSFET Tested for Avalanche Energy Reliability
Key Attributes
Model Number:
MDD10N65F
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
10A
RDS(on):
810mΩ@10V,5A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
6.8pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
40W
Input Capacitance(Ciss):
1.622nF@25V
Gate Charge(Qg):
34.2nC@10V
Mfr. Part #:
MDD10N65F
Package:
TO-220F
Product Description
Product Overview
The MDD10N65F/MDD10N65P is a 650V N-Channel Enhancement Mode MOSFET designed for high-efficiency applications. Key features include ultra-low gate charge, low reverse transfer capacitance, fast switching capability, and improved dv/dt capability for high ruggedness. It is tested for avalanche energy and is suitable for use in high-efficiency switch mode power supplies, electronic lamp ballasts based on half bridges, and LED power supplies.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | TO-220F | TO-220 | Unit | Notes |
| Drain-Source Voltage | VDS | 650 | 650 | V | |
| Gate-Source Voltage | VGS | ±30 | ±30 | V | |
| Continuous Drain Current | ID | 10 | 10 | A | (Tc=25) |
| Power Dissipation | PD | 40 | 130 | W | |
| Junction Temperature | TJ | 150 | 150 | ||
| Storage Temperature | Tstg | -55 ~150 | -55 ~150 | ||
| Pulsed Drain Current | IDM | 40 | 40 | A | (Note 1) |
| Avalanche Energy Single Pulsed | EAS | 500 | 500 | mJ | (Note 2) |
| Peak Diode Recovery dv/dt | dv/dt | 5 | 5 | V/ns | (Note 3) |
| Continuous diode forward current | IS | 10 | 10 | A | |
| Thermal resistance, Junction-to-case | RJC | 3.13 | 0.96 | °C/W | |
| Thermal resistance, Junction-to-ambient | RJA | 110 | 62.5 | °C/W | |
| Input Capacitance | Ciss | 1622 | 1622 | pF | VDS=25V, VGS=0V, f=1MHz |
| Output Capacitance | Coss | 144.2 | 144.2 | pF | |
| Reverse Transfer Capacitance | Crss | 6.8 | 6.8 | pF | |
| Total Gate Charge | Qg | 34.2 | 34.2 | nC | VDS=520V, VGS=10V, ID=10A (Note1,2) |
| Gate Source Charge | Qgs | 8.8 | 8.8 | nC | |
| Gate Drain Charge | Qgd | 12.89 | 12.89 | nC | |
| Turn on Delay Time | td(on) | 14.16 | 14.16 | ns | VDS=325V, ID=10A, RG=10Ω (Note1,2) |
| Turn on Rise Time | tr | 34.64 | 34.64 | ns | |
| Turn Off Delay Time | td(off) | 65.72 | 65.72 | ns | |
| Turn Off Fall Time | tf | 16.04 | 16.04 | ns | |
| Source drain current(Body Diode) | ISD | 10 | 10 | A | |
| Drain-Source Diode Forward Voltage | VSD | 1.5 | 1.5 | V | IS=10A, VGS=0V |
| Max Pulsed Current | ISM | 40 | 40 | A | |
| Body Diode Reverse Recovery Time | trr | 418.8 | 418.8 | ns | |
| Body Diode Reverse Recovery Charge | Qrr | 3.40 | 3.40 | µC | VR=325V, IF=10A, -diF/dt =100A/µs |
| Drain-Source Breakdown Voltage | V(BR)DSS | 650 | 650 | V | VGS=0V, ID=250µA |
| Gate-Source Leakage Current | IGSS | 100 | 100 | nA | VGS=30V, VDS=0V |
| Drain-Source Leakage Current | IDSS | 1 | 1 | µA | VDS=650V, VGS=0V |
| Gate Threshold Voltage | VGS(TH) | 2.0 - 4.0 | 2.0 - 4.0 | V | VDS=VGS, ID=250µA |
| Drain-Source On-State Resistance | RDS(ON) | 1.0 | 1.0 | Ω | VGS=10V, ID=5A |
2408090958_MDD-Microdiode-Semiconductor-MDD10N65F_C5299406.pdf
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