PNP Plastic Encapsulate Transistor MCC MMBT5401HE3-TP with Collector Current 600mA and Voltage Rating 150V
Key Attributes
Model Number:
MMBT5401HE3-TP
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
PNP
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
150V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
MMBT5401HE3-TP
Package:
SOT-23
Product Description
Product Overview
The MMBT5401HE3 is a 1/4 PNP Plastic Encapsulate Transistor from MCCSEMI.COM. It is designed for general-purpose applications and features AEC-Q101 qualification, Halogen-Free "Green" device compliance, and RoHS compliance. This transistor offers a collector current of up to -600 mA and a collector-emitter voltage of up to -150 V, making it suitable for various electronic circuits.
Product Attributes
- Brand: MCCSEMI.COM
- Device Type: PNP Plastic Encapsulate Transistor
- Marking: Halogen Free. "Green" Device
- Certifications: AEC-Q101 Qualified, UL 94 V-0 Flammability Rating, RoHS Compliant
- Moisture Sensitivity Level: 1
Technical Specifications
| Parameter | Symbol | Rating | Unit | Conditions |
|---|---|---|---|---|
| Collector Current | IC | -600 | mA | |
| Collector Power Dissipation | PC | 300 | mW | |
| Collector-Emitter Voltage | VCEO | -150 | V | |
| Emitter-Base Voltage | VEBO | -5 | V | |
| Collector-Base Voltage | VCBO | -160 | V | |
| Operating Junction Temperature Range | -55 to +150 | |||
| Storage Temperature Range | -55 to +150 | |||
| Thermal Resistance Junction to Ambient | 417 | /W | ||
| Emitter-Base Cutoff Current | IEBO | -100 | nA | VEB=-4V, IC=0 |
| Transition Frequency | fT | 100 | MHz | VCE=-5V, IC=-50mA, IB=-5mA, f=30MHz |
| Base-Emitter Saturation Voltage | VBE(sat) | -1.0 | V | IC=-50mA, IB=-5mA |
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.5 | V | IC=-50mA, IB=-5mA |
| DC Current Gain | hFE1 | 100 | VCE=-5V, IC=-1.0mA | |
| DC Current Gain | hFE2 | 300 | VCE=-5V, IC=-10mA | |
| DC Current Gain | hFE3 | 80 | VCE=-5V, IC=-50mA | |
| Collector Cutoff Current | ICBO | -50 | nA | VCB=-120V, IE=0 |
| Emitter-Base Breakdown Voltage | V(BR)EBO | -5 | V | IE=-10A, IC=0 |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -150 | V | IC=-1mA, IB=0 |
| Collector-Base Breakdown Voltage | V(BR)CBO | -160 | V | IC=-100A, IE=0 |
2410010102_MCC-MMBT5401HE3-TP_C3199889.pdf
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