Medium Power Amplifier Transistor MCC MMBTA05-TP NPN Small Signal Switching Epitaxial Planar Die
Key Attributes
Model Number:
MMBTA05-TP
Product Custom Attributes
Emitter-Base Voltage(Vebo):
4V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
60V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
MMBTA05-TP
Package:
SOT-23
Product Description
Product Overview
The MMBTA05 and MMBTA06 are NPN small signal general purpose amplifier transistors designed for medium power amplification and switching applications. These epitaxial planar die construction transistors are halogen-free, moisture sensitivity level 1, and meet UL 94 V-0 flammability rating. They are lead-free and RoHS compliant.
Product Attributes
- Brand: MCCSEMI.COM
- Construction: Epitaxial Planar Die
- Certifications: Halogen Free. "Green" Device, Moisture Sensitivity Level 1, Epoxy Meets UL 94 V-0 Flammability Rating, Lead Free Finish/RoHS Compliant
Technical Specifications
| Parameter | Symbol | Rating | Unit | Conditions |
| Collector-Base Voltage | VCBO | 80 | V | |
| Collector-Emitter Voltage | VCEO | 80 | V | |
| Emitter-Base Voltage | VEBO | 4 | V | |
| Continuous Collector Current | IC | 500 | mA | @ 25C Unless Otherwise Specified |
| Power Dissipation | PD | 300 | mW | |
| Operating Junction Temperature Range | -55 to +150 | |||
| Storage Temperature Range | -55 to +150 | |||
| Thermal Resistance | 417 | /W | Junction to Ambient | |
| Collector-Base Breakdown Voltage | V(BR)CBO | 80 | V | IC=100A, IE=0 |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 80 | V | IC=1mA, IB=0 |
| Emitter-Base Breakdown Voltage | V(BR)EBO | 4 | V | IE=100A, IC=0 |
| Collector Cutoff Current | ICBO | 0.1 | A | VCB=60V, IE=0 |
| Collector Cutoff Current | ICEO | 0.1 | A | VCE=60V, IB=0 |
| Emitter Cutoff Current | IEBO | 0.1 | A | VEB=3V, IC=0 |
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.25 | V | IC=100mA, IB=10mA |
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.2 | V | IC=100mA, IB=10mA |
| Base-Emitter Saturation Voltage | VBE(sat) | 1.2 | V | IC=10mA, IB=1mA |
| DC Current Gain | hFE(1) | 100-400 | VCE=1V, IC=10mA | |
| DC Current Gain | hFE(2) | 100 | VCE=1V, IC=100mA, IB=10mA | |
| Transition Frequency | fT | 100 | MHz | VCE=2V, IC=10mA, f=100MHz |
2401291345_MCC-MMBTA05-TP_C3199869.pdf
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