Compact Surface Mount P Channel MOSFET ME12P04 Featuring DMOS Trench Technology for Power Management
Key Attributes
Model Number:
ME12P04
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
18.6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
80mΩ@4.5V,6A
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
91pF
Number:
1 P-Channel
Input Capacitance(Ciss):
921pF
Output Capacitance(Coss):
-
Pd - Power Dissipation:
25W
Gate Charge(Qg):
20.3nC@10V
Mfr. Part #:
ME12P04
Package:
TO-252-2(DPAK)
Product Description
Product Overview
The ME12P04 is a P-Channel logic enhancement mode power MOSFET utilizing high cell density, DMOS trench technology. This design significantly minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface-mount package.
Product Attributes
- Brand: Matsuki Electric/Force Mos
- Product Series: ME12P04/ME12P04-G
- Certifications: Pb-free (ME12P04), Green product-Halogen free (ME12P04-G)
- Package Type: TO-252-3L
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | VGS=0V, ID=-250A | -40 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=-250A | -1 | -1.9 | -3 | V |
| Gate Leakage Current | IGSS | VDS=0V, VGS=25V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-40V, VGS=0V | -1 | A | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS=-10V, ID=-12A | 35 | 45 | m | |
| VGS=-4.5V, ID=-6A | 57 | 80 | m | |||
| Diode Forward Voltage | VSD | IS=-1.7A, VGS=0V | -0.78 | -1.2 | V | |
| Total Gate Charge | Qg | VDS=-20V, VGS=-10V, ID=-12A | 20.3 | nC | ||
| VDS=-20V, VGS=-4.5V, ID=-12A | 9.8 | nC | ||||
| Gate-Source Charge | Qgs | 5 | ||||
| Gate-Drain Charge | Qgd | 4.3 | ||||
| Input Capacitance | Ciss | VDS=-20V, VGS=0V, F=1MHz | 921 | pF | ||
| Output Capacitance | Coss | 91 | pF | |||
| Reverse Transfer Capacitance | Crss | 78 | pF | |||
| Turn-On Delay Time | td(on) | VDS=-15V, RL=15, VGS=-10V, RG=6, ID=-1A | 35.3 | ns | ||
| Turn-On Rise Time | tr | 56 | ns | |||
| Turn-Off Delay Time | td(off) | 15.6 | ns | |||
| Turn-Off Fall Time | tf | 8.2 | ns | |||
| Maximum Power Dissipation | PD | TC=25 | 25 | W | ||
| TC=70 | 16 | W | ||||
| Operating Junction Temperature | TJ | -55 | 150 | |||
| Thermal Resistance-Junction to Case | RJC | * | 5 | /W |
2410121656_MATSUKI-ME12P04_C165224.pdf
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