Switching device luxin-semi YGD65N65U1 650V 65A trench field stop IGBT ideal for welding and inverter
Key Attributes
Model Number:
YGD65N65U1
Product Custom Attributes
Td(off):
150ns
Pd - Power Dissipation:
272W
Td(on):
40ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
35pF
Input Capacitance(Cies):
4.82nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.4V@250uA
Operating Temperature:
-40℃~+175℃
Pulsed Current- Forward(Ifm):
60A
Output Capacitance(Coes):
365pF
Switching Energy(Eoff):
1.6mJ
Turn-On Energy (Eon):
1.8mJ
Mfr. Part #:
YGD65N65U1
Package:
TO-3P
Product Description
Product Overview
The YGD65N65U1 is a 650V / 65A Trench Field Stop IGBT designed for high-speed switching applications. It offers high ruggedness, temperature stability, a short circuit withstand time of 5s, and low VCEsat, making it suitable for easy parallel switching. This IGBT is ideal for demanding applications like Uninterruptible Power Supplies, Inverters, Welding Converters, PFC applications, and converters with high switching frequencies.
Product Attributes
- Brand: LU-SEMI
- Product Package: TO-3P
- Packaging: Tube
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Maximum Ratings | VCE | Tj 25 | - | - | 650 | V |
| IC | TC = 25C | - | - | 130 | A | |
| IC | TC = 100C | - | - | 65 | A | |
| IF | TC = 25C | - | - | 40 | A | |
| IF | TC = 100C | - | - | 20 | A | |
| VGE | Continuous | - | - | 20 | V | |
| VGE | Transient (tp10s,D0.01) | - | - | 30 | V | |
| Electrical Characteristics | BVCES | VGE=0V , IC=250A | 650 | - | - | V |
| VGE(th) | VGE=VCE, IC=250A | 4.4 | 5.2 | 6.0 | V | |
| VCE(sat) | VGE=15V, IC=65A, Tj = 25C | - | - | 1.6 | V | |
| Dynamic Characteristics | td(on) | Tj=25C, VCC=400V, IC=65A, VGE = 0/15V, Rg=10 | - | 40 | - | ns |
| tr | Tj=25C, VCC=400V, IC=65A, VGE = 0/15V, Rg=10 | - | 87 | - | ns | |
| td(off) | Tj=25C, VCC=400V, IC=65A, VGE = 0/15V, Rg=10 | - | 150 | - | ns | |
| tf | Tj=25C, VCC=400V, IC=65A, VGE = 0/15V, Rg=10 | - | 80 | - | ns | |
| Thermal Resistance | R(j-c) | IGBT | - | - | 0.55 | K/W |
| R(j-c) | Diode | - | - | 1.95 | K/W |
2507221720_luxin-semi-YGD65N65U1_C49215481.pdf
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