Silicon Plastic Encapsulated MCC MMSS8550-H-TP Transistor with RoHS Compliance and High Current Gain
Key Attributes
Model Number:
MMSS8550-H-TP
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
PNP
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MMSS8550-H-TP
Package:
SOT-23
Product Description
Product Overview
The MMSS8550-L and MMSS8550-H are PNP silicon plastic-encapsulated transistors designed for switching and AF amplifier applications. These devices are halogen-free, moisture sensitivity level 1, and meet UL 94 V-0 flammability rating. They are lead-free and RoHS compliant.
Product Attributes
- Brand: MCCSEMI.COM
- Material: Silicon Plastic-Encapsulate
- Certifications: Halogen Free, Moisture Sensitivity Level 1, UL 94 V-0 Flammability Rating, Lead Free Finish/RoHS Compliant
Technical Specifications
| Parameter | Symbol | MMSS8550-L | MMSS8550-H | Conditions | Units |
| Collector-Base Voltage | VCBO | -40 | V | ||
| Collector-Emitter Voltage | VCEO | -25 | V | ||
| Emitter-Base Voltage | VEBO | -5 | V | ||
| Collector Current | IC | -1.5 | A | ||
| Power Dissipation | PD | 300 | mW | ||
| Thermal Resistance | 417 | Junction to Ambient | /W | ||
| DC Current Gain (hFE(1)) | hFE(1) | 120-200 | 200-350 | VCE=-1V, IC=-10mA | |
| DC Current Gain (hFE(2)) | hFE(2) | 40-120 | VCE=-1V, IC=-800mA | ||
| Collector-Emitter Cutoff Current | ICEO | -100 | VCE=-20V, IB=0 | nA | |
| Emitter-Base Cutoff Current | IEBO | -100 | VEB =-5V, IC=0 | nA | |
| Collector-Base Cutoff Current | ICBO | -100 | VCB=-40V, IE=0 | nA | |
| Transition Frequency | fT | 100 | VCE=-10V, IC=-50mA, f=30MHz | MHz | |
| Base-Emitter Voltage | VBE | -1.2 | VCE=-1V, IC=-800mA, IB=-80mA | V | |
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.5 | VCE=-1V, IC=-10mA | V | |
| Emitter-Base Breakdown Voltage | V(BR)EBO | -5 | IE=-100A, IC=0 | V | |
| Collector-Base Breakdown Voltage | V(BR)CBO | -40 | IC=-100A, IE=0 | V | |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -25 | IC=-100A, IB=0 | V | |
| Operating Junction Temperature Range | -55 to +150 | ||||
| Storage Temperature Range | -55 to +150 | ||||
2409302134_MCC-MMSS8550-H-TP_C192429.pdf
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