Plastic Encapsulated NPN Transistor MCC BCP56-16-TP RoHS Compliant UL 94 V0 Flammability Certified
Key Attributes
Model Number:
BCP56-16-TP
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
1.5W
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
80V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
BCP56-16-TP
Package:
SOT-223
Product Description
Product Overview
The BCP56-10 and BCP56-16 are NPN plastic-encapsulated transistors designed for various electronic applications. They offer complementary PNP types (BCP53) and are available in a halogen-free option. These transistors meet stringent flammability ratings and are RoHS compliant, making them suitable for environmentally conscious designs. They are characterized by their robust construction and reliable performance across a wide temperature range.
Product Attributes
- Brand: MCCSEMI.COM
- Material: Plastic Encapsulate
- Certifications: UL 94 V-0 Flammability Rating, RoHS Compliant
- Halogen Free: Available Upon Request (add "-HF" suffix)
- Moisture Sensitivity Level: 1
Technical Specifications
| Parameter | Symbol | BCP56-10 (Min) | BCP56-10 (Typ) | BCP56-10 (Max) | BCP56-16 (Min) | BCP56-16 (Typ) | BCP56-16 (Max) | Unit | Conditions |
| Collector-Emitter Voltage | VCEO | 80 | 80 | V | |||||
| Collector-Base Voltage | VCBO | 100 | 100 | V | |||||
| Emitter-Base Voltage | VEBO | 5 | 5 | V | |||||
| Collector Current | IC | 1 | 1 | A | |||||
| Power Dissipation | PD | 1.5 | 1.5 | W | @ 25C | ||||
| Operating Junction Temperature Range | -55 | 150 | -55 | 150 | |||||
| Storage Temperature Range | -55 | 150 | -55 | 150 | |||||
| Thermal Resistance | Rth(j-a) | 83.3 | 83.3 | /W | Junction to Ambient | ||||
| Collector-Base Cutoff Current | ICBO | 100 | 100 | nA | VCB=30V, IE=0 | ||||
| Emitter-Base Breakdown Voltage | V(BR)EBO | 5 | 5 | V | IE=10A, IC=0 | ||||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 80 | 80 | V | IC=10mA, IB=0 | ||||
| Collector-Base Breakdown Voltage | V(BR)CBO | 100 | 100 | V | IC=100A, IE=0 | ||||
| Transition Frequency | fT | 100 | 100 | MHz | VCE=2V, IC=500mA | ||||
| DC Current Gain (hFE1) | hFE1 | 25 | 25 | VCE=2V, IC=5mA | |||||
| DC Current Gain (hFE2) | hFE2 | 63 | 250 | 100 | 250 | VCE=2V, IC=500mA | |||
| DC Current Gain (hFE3) | hFE3 | 25 | 25 | VCE=2V, IC=150mA | |||||
| Base-Emitter Voltage | VBE | 1 | 1 | V | IC=500mA, IB=50mA | ||||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.5 | 0.5 | V | IC=500mA, IB=50mA |
2410010204_MCC-BCP56-16-TP_C668878.pdf
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