Full bridge power module MICROCHIP APT60DF60HJ designed for high speed switching and low loss operation

Key Attributes
Model Number: APT60DF60HJ
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
500A
Operating Junction Temperature Range:
-55℃~+175℃@(Tj)
Voltage - Forward(Vf@If):
2.3V@60A
Current - Rectified:
90A
Voltage - DC Reverse(Vr):
600V
Mfr. Part #:
APT60DF60HJ
Package:
SOT-227
Product Description

Microsemi APT60DF60HJ Fast Diode Full Bridge Power Module

The APT60DF60HJ is an ultra-fast recovery full bridge power module featuring soft recovery characteristics, high blocking voltage, and high current capabilities. Designed for high-frequency operation, it offers low losses, low noise switching, and excellent integration within the ISOTOP package. This module is ideal for switch mode power supplies, induction heating, welding equipment, and other high-speed rectifier applications.

Product Attributes

  • Brand: Microsemi
  • Package: ISOTOP (SOT-227)
  • Certifications: RoHS Compliant

Technical Specifications

Parameter Test Conditions Min Typ Max Unit
Absolute Maximum Ratings
Maximum DC reverse Voltage (VR) 600 V
Maximum Peak Repetitive Reverse Voltage (VRRM) 600 V
Maximum Average Forward Current (IF(AV)) Duty cycle = 50%, TC = 80C 60 A
Non-Repetitive Forward Surge Current (IFSM) 8.3ms, TJ = 45C 500 A
Electrical Characteristics
Diode Forward Voltage (VF) IF = 60A 1.7 2.3 V
IF = 120A V
Maximum Reverse Leakage Current (IRM) IF = 60A, Tj = 125C A
VR = 600V, Tj = 125C 500 A
Junction Capacitance (CT) VR = 200V 145 pF
Dynamic Characteristics
Reverse Recovery Time (trr) Tj = 25C 70 ns
Tj = 125C 140 ns
Reverse Recovery Charge (Qrr) Tj = 25C 100 nC
Tj = 125C 690 nC
Reverse Recovery Current (IRRM) Tj = 25C 4 A
Tj = 125C 9 A
Reverse Recovery Time (trr) IF = 60A, VR = 400V, di/dt = 200A/s, Tj = 125C 80 ns
Reverse Recovery Charge (Qrr) IF = 60A, VR = 400V, di/dt = 200A/s, Tj = 125C 1540 nC
Reverse Recovery Current (IRRM) IF = 60A, VR = 400V, di/dt = 200A/s, Tj = 125C 31 A
Reverse Recovery Time (trr) IF = 60A, VR = 400V, di/dt=1000A/s, Tj = 125C ns
Reverse Recovery Charge (Qrr) IF = 60A, VR = 400V, di/dt=1000A/s, Tj = 125C nC
Reverse Recovery Current (IRRM) IF = 60A, VR = 400V, di/dt=1000A/s, Tj = 125C A
Thermal and Package Characteristics
Junction to Case Thermal Resistance (RthJC) 0.85 C/W
Junction to Ambient (RthJA) 20 C/W
RMS Isolation Voltage (VISOL) any terminal to case, t =1 min, 50/60Hz 2500 V
Storage Temperature Range (TJ,TSTG) -55 175 C
Max Lead Temp for Soldering 0.063 from case for 10 sec 300 C
Mounting Torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) 1.5 N.m
Package Weight (Wt) 29.2 g

2410121807_MICROCHIP-APT60DF60HJ_C5444782.pdf

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