High Speed Switching Field Stop IGBT MagnaChip Semicon MBQ40T65QESTH with Halogen Free Certification
Key Attributes
Model Number:
MBQ40T65QESTH
Product Custom Attributes
Td(off):
55ns
Pd - Power Dissipation:
230W
Td(on):
6ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
37pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
3.5V@40mA
Gate Charge(Qg):
60nC@15V
Operating Temperature:
-40℃~+175℃
Reverse Recovery Time(trr):
72ns
Switching Energy(Eoff):
400uJ
Turn-On Energy (Eon):
500uJ
Input Capacitance(Cies):
1.565nF
Pulsed Current- Forward(Ifm):
120A
Output Capacitance(Coes):
120pF
Mfr. Part #:
MBQ40T65QESTH
Package:
TO-247
Product Description
Product Overview
The Magnachip MBQ40T65QES is a 650V Field Stop IGBT designed for high-speed switching and low power loss. Leveraging Magnachip's advanced Field Stop Trench IGBT Technology, this device offers excellent quality and performance. It is suitable for applications such as inverters, welding converters, and high-range switching frequency converters.
Product Attributes
- Brand: Magnachip Semiconductor Ltd.
- Technology: Field Stop Trench IGBT
- Package: TO-247
- Certifications: Halogen Free
- Date: Jul. 2021
- Version: 1.2
Technical Specifications
| Parameter | Symbol | Conditions | Rating | Unit |
|---|---|---|---|---|
| Maximum Rating | ||||
| Collector-emitter voltage | VCE | 650 | V | |
| DC collector current, limited by Tvjmax | IC | TC=25C | 80 | A |
| DC collector current, limited by Tvjmax | IC | TC=100C | 40 | A |
| Pulsed collector current, tp limited by Tvjmax | ICpuls | 120 | A | |
| Diode forward current limited by Tvjmax | IF | TC=25C | 40 | A |
| Diode forward current limited by Tvjmax | IF | TC=100C | 20 | |
| Diode pulsed current, tp limited by Tvjmax | IFpuls | 120 | A | |
| Gate-emitter voltage | VGE | 20 | V | |
| Power dissipation | PD | TC=25C | 230 | W |
| Power dissipation | PD | TC=100C | 115 | W |
| Operating Junction temperature range | Tvj | -40~175 | C | |
| Storage temperature range | Tstg | -55~150 | C | |
| Thermal Characteristic | ||||
| Thermal resistance junction-to-ambient | RJA | 40 | C/W | |
| Thermal resistance junction-to-case for IGBT | RJC | 0.65 | ||
| Thermal resistance junction-to-case for Diode | RJC | 1.75 | ||
| Features | ||||
| High Speed Switching & Low Power Loss | VCE(sat) | @ IC = 40A | 1.8 | V |
| Maximum junction temperature | 175 | C | ||
| Electrical Characteristic (Tvj = 25C unless otherwise specified) | ||||
| Collector-emitter breakdown voltage | BVCES | IC = 2mA, VGE = 0V | 650 | V |
| Collector-emitter saturation voltage | VCE(sat) | IC = 40A, VGE= 15V, Tvj = 25C | - 2.3 | V |
| Collector-emitter saturation voltage | VCE(sat) | IC = 40A, VGE= 15V, Tvj = 175C | - 2.3 | |
| Diode forward voltage | VF | VGE = 0V, IF = 20A, Tvj = 25C | - 1.95 | V |
| Diode forward voltage | VF | VGE = 0V, IF = 20A, Tvj = 175C | - 1.5 | |
| Gate-emitter threshold voltage | VGE(th) | VCE = VGE, IC = 40mA | 3.5 - 6.5 | V |
| Zero gate voltage collector current | ICES | VCE = 650V, VGE = 0V, Tvj = 25C | - 40 | A |
| Gate-emitter leakage current | IGES | VGE = 20V, VCE = 0V | - 100 | nA |
| Dynamic Characteristic | ||||
| Total gate charge | Qg | VCE = 520V, IC = 40A, VGE = 15V | - 60 | nC |
| Gate-emitter charge | Qge | - 13 | ||
| Gate-collector charge | Qgc | - 25 | ||
| Input capacitance | Cies | VCE = 25V, VGE = 0V, f = 1MHz | - 1565 | pF |
| Reverse transfer capacitance | Cres | - 37 | ||
| Output capacitance | Coes | - 120 | ||
| Switching Characteristic (Tvj = 25C) | ||||
| Turn-on delay time | td(on) | VGE = 15V, VCC = 400V, IC = 40A, RG = 10, Inductive Load | - 6 | ns |
| Rise time | tr | - 36 | ||
| Turn-off delay time | td(off) | - 55 | ||
| Fall time | tf | - 64 | ||
| Turn-on switching energy | Eon | - 0.5 | mJ | |
| Turn-off switching energy | Eoff | - 0.4 | mJ | |
| Total switching energy | Ets | - 0.9 | mJ | |
| Switching Characteristic (Tvj = 175C) | ||||
| Turn-on delay time | td(on) | VGE = 15V, VCC = 400V, IC = 40A, RG = 10, Inductive Load | - 7 | ns |
| Rise time | tr | - 41 | ||
| Turn-off delay time | td(off) | - 60 | ||
| Fall time | tf | - 102 | ||
| Turn-on switching energy | Eon | - 1.04 | mJ | |
| Turn-off switching energy | Eoff | - 0.57 | mJ | |
| Total switching energy | Ets | - 1.61 | mJ | |
| Diode Characteristic (Tvj = 25C) | ||||
| Reverse recovery time | trr | IF = 20A, diF/dt = 820A/ s | - 60 | ns |
| Reverse recovery current | Irr | - 18 | A | |
| Reverse recovery charge | Qrr | - 696 | nC | |
| Diode Characteristic (Tvj = 175C) | ||||
| Reverse recovery time | trr | IF = 20A, diF/dt = 820A/ s | - 72 | ns |
| Reverse recovery current | Irr | - 22 | A | |
| Reverse recovery charge | Qrr | - 864 | nC | |
| Ordering Information | ||||
| Part Number | Marking | Temp. Range | Package | Packing |
| MBQ40T65QESTH | 40T65QES | -55~150C | TO-247 | Tube |
| Physical Dimension | ||||
| Dimension | Min(mm) | Max(mm) | ||
| A | 4.70 | 5.31 | ||
| A1 | 2.20 | 2.60 | ||
| A2 | 1.50 | 2.49 | ||
| b | 0.99 | 1.40 | ||
| b1 | 2.59 | 3.43 | ||
| b2 | 1.65 | 2.39 | ||
| c | 0.38 | 0.89 | ||
| D | 20.30 | 21.46 | ||
| D1 | 13.08 | - | ||
| E | 15.45 | 16.26 | ||
| E1 | 13.06 | 14.02 | ||
| E2 | 4.32 | 5.49 | ||
| e | 5.45BSC | |||
| L | 19.81 | 20.57 | ||
| L1 | - | 4.50 | ||
| P | 3.50 | 3.70 | ||
| Q | 5.38 | 6.20 | ||
| S | 6.15BSC | |||
2409271703_MagnaChip-Semicon-MBQ40T65QESTH_C20613157.pdf
Related Products
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities
XR20G10 N-Ch and P-Ch Fast Switching MOSFETs Product Description The XR20G10 is a high-performance complementary N-channel and P-channel MOSFET series featuring extreme high cell density. This design provides excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck ...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
Planar die Zener diode XZT BZT52B9V1S designed for medium current applications and automated assembly
Product OverviewThe BZT52B2V4S thru BZT52B43S series are Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in a lead-free version. These diodes feature a planar die construction.Product AttributesBrand: ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
