High cell density DMOS trench technology transistor MATSUKI ME66N04T for power management solutions
Key Attributes
Model Number:
ME66N04T
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
38A
Operating Temperature -:
-55℃~+175℃@(Tj)
RDS(on):
10.5mΩ@10V,28A
Gate Threshold Voltage (Vgs(th)):
1.6V
Reverse Transfer Capacitance (Crss@Vds):
172pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
3.522nF@25V
Pd - Power Dissipation:
50W
Gate Charge(Qg):
62nC@10V
Mfr. Part #:
ME66N04T
Package:
TO-220FB-3
Product Description
Product Overview
The ME66N04T is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density DMOS trench technology. This advanced technology minimizes on-state resistance, offering exceptional on-resistance and maximum DC current capability. It is designed for power management, DC/DC converters, and load switch applications.
Product Attributes
- Brand: Matsuki (implied by datasheet)
- Type: N-Channel 4V (D-S) MOSFET
- Technology: High cell density DMOS trench technology
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 40 | V | |||
| Gate-Source Voltage | VGSS | ±25 | V | |||
| Continuous Drain Current | ID | TC=25℃ | 55 | A | ||
| TC=100℃ | 38 | A | ||||
| Pulsed Drain Current | IDM | 220 | A | |||
| Maximum Power Dissipation | PD | TC=25℃ | 100 | W | ||
| TC=100℃ | 50 | W | ||||
| Operating Junction Temperature | TJ | -55 | 175 | ℃ | ||
| Thermal Resistance-Junction to Case | RθJC | * | 1.5 | ℃/W | ||
| Electrical Characteristics (TA =25℃ Unless Otherwise Specified) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, IDS=250μA | 40 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=250μA | 1 | 3 | V | |
| Gate-Body Leakage | IGSS | VDS=0V, VGS=±25V | ±100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V | 1 | μA | ||
| Drain-Source On-Resistance | RDS(ON) | VGS=10V, IDS=28A * | 10.5 | 13.5 | mΩ | |
| VGS=4.5V, IDS=28A * | 13.5 | 15 | mΩ | |||
| Diode Forward Voltage | VSD | ISD=28A, VGS=0V * | 0.8 | 1.1 | V | |
| Dynamic Characteristics (TJ =25℃ Noted) | ||||||
| Total Gate Charge | Qg | VDS=48V, VGS=10V, IDS=28A | 62 | nC | ||
| Gate-Source Charge | Qgs | 11 | nC | |||
| Gate-Drain Charge | Qgd | 4.8 | nC | |||
| Input capacitance | Ciss | VDS=25V, VGS=0V, f=1.0MHz | 3522 | pF | ||
| Output Capacitance | Coss | 666 | pF | |||
| Reverse Transfer Capacitance | Crss | 172 | pF | |||
| Turn-On Delay Time | td(on) | VDD=30V, IDS=28A, VGS=10V, G=4Ω | 21 | ns | ||
| Turn-On Rise Time | tr | 25 | ns | |||
| Turn-Off Delay Time | td(off) | 27 | ns | |||
| Turn-On Fall Time | tf | 31 | ns | |||
2411220226_MATSUKI-ME66N04T_C709732.pdf
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